Enhancement of photo- and electro-luminescence of GaN-based LED structure grown on a nanometer-scaled patterned sapphire substrate

Hyoungwon Park, Kyeong Jae Byeon, Jong Jin Jang, Okhyun Nam, Heon Lee

Research output: Contribution to journalArticle

20 Citations (Scopus)


In this study, a 2 in. sized a highly periodic nanometer-scaled patterned sapphire substrate (NPSS) was fabricated using nanoimprint lithography (NIL) and inductively coupled plasma etching to improve the light-extraction efficiency of GaN-based light-emitting diodes (LEDs). A blue LED structure was grown on the nanometer-scale patterned sapphire substrates, and the photoluminescence (PL) and electroluminescence (EL) were measured to confirm the effectiveness of the nanometer-scaled patterns on sapphire. An improvement in luminescence efficiency was observed when NPSS was applied; 2 times stronger PL intensity and 2.8 times stronger EL intensity than the LED structure grown on the unpatterned sapphire wafers were measured. These results show highly periodic nanometer-scaled patterns create multi-photon scattering and effectively enhance the light-extraction efficiency of LEDs.

Original languageEnglish
Pages (from-to)3207-3213
Number of pages7
JournalMicroelectronic Engineering
Issue number11
Publication statusPublished - 2011 Nov 1



  • Electroluminescence (EL)
  • GaN-based light-emitting diodes (LEDs)
  • Nanoimprint lithography (NIL)
  • Nanometer-scaled patterned sapphire substrate (NPSS)
  • Photoluminescence (PL)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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