Enhancement of photo- and electro-luminescence of GaN-based LED structure grown on a nanometer-scaled patterned sapphire substrate

Hyoungwon Park, Kyeong Jae Byeon, Jong Jin Jang, Okhyun Nam, Heon Lee

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

In this study, a 2 in. sized a highly periodic nanometer-scaled patterned sapphire substrate (NPSS) was fabricated using nanoimprint lithography (NIL) and inductively coupled plasma etching to improve the light-extraction efficiency of GaN-based light-emitting diodes (LEDs). A blue LED structure was grown on the nanometer-scale patterned sapphire substrates, and the photoluminescence (PL) and electroluminescence (EL) were measured to confirm the effectiveness of the nanometer-scaled patterns on sapphire. An improvement in luminescence efficiency was observed when NPSS was applied; 2 times stronger PL intensity and 2.8 times stronger EL intensity than the LED structure grown on the unpatterned sapphire wafers were measured. These results show highly periodic nanometer-scaled patterns create multi-photon scattering and effectively enhance the light-extraction efficiency of LEDs.

Original languageEnglish
Pages (from-to)3207-3213
Number of pages7
JournalMicroelectronic Engineering
Volume88
Issue number11
DOIs
Publication statusPublished - 2011 Nov 1

Fingerprint

Aluminum Oxide
Electroluminescence
Sapphire
electroluminescence
Light emitting diodes
Photoluminescence
sapphire
light emitting diodes
photoluminescence
augmentation
Substrates
Nanoimprint lithography
Plasma etching
Inductively coupled plasma
plasma etching
Luminescence
lithography
Photons
wafers
Scattering

Keywords

  • Electroluminescence (EL)
  • GaN-based light-emitting diodes (LEDs)
  • Nanoimprint lithography (NIL)
  • Nanometer-scaled patterned sapphire substrate (NPSS)
  • Photoluminescence (PL)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Enhancement of photo- and electro-luminescence of GaN-based LED structure grown on a nanometer-scaled patterned sapphire substrate. / Park, Hyoungwon; Byeon, Kyeong Jae; Jang, Jong Jin; Nam, Okhyun; Lee, Heon.

In: Microelectronic Engineering, Vol. 88, No. 11, 01.11.2011, p. 3207-3213.

Research output: Contribution to journalArticle

Park, Hyoungwon ; Byeon, Kyeong Jae ; Jang, Jong Jin ; Nam, Okhyun ; Lee, Heon. / Enhancement of photo- and electro-luminescence of GaN-based LED structure grown on a nanometer-scaled patterned sapphire substrate. In: Microelectronic Engineering. 2011 ; Vol. 88, No. 11. pp. 3207-3213.
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