Enhancement of the light-extraction efficiency of gan-based light emitting diodes using graded-refractive-index layer by SiO2 nanosphere lithography

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Abstract

A benzocyclobutene (BCB)-based graded-refractive-index (GRIN) layer was deposited on gallium nitride (GaN)-based blue light-emitting diodes (LEDs) to enhance the light-extraction efficiency. The GRIN layer, which was composed of both a BCB thin film and a porous structure, was fabricated by nanospheres lithography using SiO2 nanospheres. The refractive index of the porous BCB layer was intentionally controlled to reduce the total internal reflection of GaN-based LEDs. The refractive indexes of the BCB layer and porous BCB layer were 1.58 and 1.2, respectively. Consequently, the photoluminescence intensity was enhanced 1.6 times after employing the GRIN BCB layer on the GaN layer, and the electroluminescence intensity at a 10 mA injection current was increased by 22% after employing the GRIN BCB layer on an indium tin oxide layer.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume157
Issue number4
DOIs
Publication statusPublished - 2010 Mar 26

Fingerprint

Nanospheres
Lithography
Light emitting diodes
Refractive index
light emitting diodes
lithography
refractivity
Gallium nitride
augmentation
gallium nitrides
Electroluminescence
Tin oxides
Indium
benzocyclobutene
Photoluminescence
Thin films
electroluminescence
indium oxides
tin oxides
injection

ASJC Scopus subject areas

  • Electrochemistry
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics

Cite this

@article{49336a25265b46d3848e98bef99a549c,
title = "Enhancement of the light-extraction efficiency of gan-based light emitting diodes using graded-refractive-index layer by SiO2 nanosphere lithography",
abstract = "A benzocyclobutene (BCB)-based graded-refractive-index (GRIN) layer was deposited on gallium nitride (GaN)-based blue light-emitting diodes (LEDs) to enhance the light-extraction efficiency. The GRIN layer, which was composed of both a BCB thin film and a porous structure, was fabricated by nanospheres lithography using SiO2 nanospheres. The refractive index of the porous BCB layer was intentionally controlled to reduce the total internal reflection of GaN-based LEDs. The refractive indexes of the BCB layer and porous BCB layer were 1.58 and 1.2, respectively. Consequently, the photoluminescence intensity was enhanced 1.6 times after employing the GRIN BCB layer on the GaN layer, and the electroluminescence intensity at a 10 mA injection current was increased by 22{\%} after employing the GRIN BCB layer on an indium tin oxide layer.",
author = "Kim, {Byung Jae} and Joona Bang and Kim, {Sung Hyun} and Kim, {Ji Hyun}",
year = "2010",
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doi = "10.1149/1.3299327",
language = "English",
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journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
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TY - JOUR

T1 - Enhancement of the light-extraction efficiency of gan-based light emitting diodes using graded-refractive-index layer by SiO2 nanosphere lithography

AU - Kim, Byung Jae

AU - Bang, Joona

AU - Kim, Sung Hyun

AU - Kim, Ji Hyun

PY - 2010/3/26

Y1 - 2010/3/26

N2 - A benzocyclobutene (BCB)-based graded-refractive-index (GRIN) layer was deposited on gallium nitride (GaN)-based blue light-emitting diodes (LEDs) to enhance the light-extraction efficiency. The GRIN layer, which was composed of both a BCB thin film and a porous structure, was fabricated by nanospheres lithography using SiO2 nanospheres. The refractive index of the porous BCB layer was intentionally controlled to reduce the total internal reflection of GaN-based LEDs. The refractive indexes of the BCB layer and porous BCB layer were 1.58 and 1.2, respectively. Consequently, the photoluminescence intensity was enhanced 1.6 times after employing the GRIN BCB layer on the GaN layer, and the electroluminescence intensity at a 10 mA injection current was increased by 22% after employing the GRIN BCB layer on an indium tin oxide layer.

AB - A benzocyclobutene (BCB)-based graded-refractive-index (GRIN) layer was deposited on gallium nitride (GaN)-based blue light-emitting diodes (LEDs) to enhance the light-extraction efficiency. The GRIN layer, which was composed of both a BCB thin film and a porous structure, was fabricated by nanospheres lithography using SiO2 nanospheres. The refractive index of the porous BCB layer was intentionally controlled to reduce the total internal reflection of GaN-based LEDs. The refractive indexes of the BCB layer and porous BCB layer were 1.58 and 1.2, respectively. Consequently, the photoluminescence intensity was enhanced 1.6 times after employing the GRIN BCB layer on the GaN layer, and the electroluminescence intensity at a 10 mA injection current was increased by 22% after employing the GRIN BCB layer on an indium tin oxide layer.

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