Enhancement of the light output of GaN-based light-emitting diodes with surface-patterned ITO electrodes by maskless wet-etching

Dong Seok Leem, Takhee Lee, Tae Yeon Seong

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

Wet-etching-induced surface patterning of p-type indium tin oxide (ITO) electrodes has been investigated to improve the light output of GaN-based light-emitting diodes (LEDs). Etching of as-deposited ITO layers in a buffered-oxide-etch solution results in the formation of a high density of randomly distributed sphere-shaped protrusions (250-1100 nm in size). LEDs fabricated with the 7 s-etched ITO electrodes yield higher light output (by 31.7% at 20 mA) compared with LEDs made with unpatterned ITO electrodes. The improvement is attributed to the increased light escape probability via the randomly distributed sphere-shaped protrusions formed on the electrode surfaces.

Original languageEnglish
Pages (from-to)793-796
Number of pages4
JournalSolid-State Electronics
Volume51
Issue number5
DOIs
Publication statusPublished - 2007 May 1

Keywords

  • GaN
  • ITO
  • LEDs
  • Surface patterning
  • Wet-etching

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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