Enhancement of the light output of GaN-based light-emitting diodes with surface-patterned ITO electrodes by maskless wet-etching

Dong Seok Leem, Takhee Lee, Tae Yeon Seong

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

Wet-etching-induced surface patterning of p-type indium tin oxide (ITO) electrodes has been investigated to improve the light output of GaN-based light-emitting diodes (LEDs). Etching of as-deposited ITO layers in a buffered-oxide-etch solution results in the formation of a high density of randomly distributed sphere-shaped protrusions (250-1100 nm in size). LEDs fabricated with the 7 s-etched ITO electrodes yield higher light output (by 31.7% at 20 mA) compared with LEDs made with unpatterned ITO electrodes. The improvement is attributed to the increased light escape probability via the randomly distributed sphere-shaped protrusions formed on the electrode surfaces.

Original languageEnglish
Pages (from-to)793-796
Number of pages4
JournalSolid-State Electronics
Volume51
Issue number5
DOIs
Publication statusPublished - 2007 May 1

Fingerprint

Wet etching
Tin oxides
indium oxides
Indium
tin oxides
Light emitting diodes
light emitting diodes
etching
Electrodes
electrodes
augmentation
output
Oxides
escape
Etching
oxides
indium tin oxide

Keywords

  • GaN
  • ITO
  • LEDs
  • Surface patterning
  • Wet-etching

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Enhancement of the light output of GaN-based light-emitting diodes with surface-patterned ITO electrodes by maskless wet-etching. / Leem, Dong Seok; Lee, Takhee; Seong, Tae Yeon.

In: Solid-State Electronics, Vol. 51, No. 5, 01.05.2007, p. 793-796.

Research output: Contribution to journalArticle

@article{076bbd67f9fc4451adedbcd20991f63f,
title = "Enhancement of the light output of GaN-based light-emitting diodes with surface-patterned ITO electrodes by maskless wet-etching",
abstract = "Wet-etching-induced surface patterning of p-type indium tin oxide (ITO) electrodes has been investigated to improve the light output of GaN-based light-emitting diodes (LEDs). Etching of as-deposited ITO layers in a buffered-oxide-etch solution results in the formation of a high density of randomly distributed sphere-shaped protrusions (250-1100 nm in size). LEDs fabricated with the 7 s-etched ITO electrodes yield higher light output (by 31.7{\%} at 20 mA) compared with LEDs made with unpatterned ITO electrodes. The improvement is attributed to the increased light escape probability via the randomly distributed sphere-shaped protrusions formed on the electrode surfaces.",
keywords = "GaN, ITO, LEDs, Surface patterning, Wet-etching",
author = "Leem, {Dong Seok} and Takhee Lee and Seong, {Tae Yeon}",
year = "2007",
month = "5",
day = "1",
doi = "10.1016/j.sse.2007.02.038",
language = "English",
volume = "51",
pages = "793--796",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "5",

}

TY - JOUR

T1 - Enhancement of the light output of GaN-based light-emitting diodes with surface-patterned ITO electrodes by maskless wet-etching

AU - Leem, Dong Seok

AU - Lee, Takhee

AU - Seong, Tae Yeon

PY - 2007/5/1

Y1 - 2007/5/1

N2 - Wet-etching-induced surface patterning of p-type indium tin oxide (ITO) electrodes has been investigated to improve the light output of GaN-based light-emitting diodes (LEDs). Etching of as-deposited ITO layers in a buffered-oxide-etch solution results in the formation of a high density of randomly distributed sphere-shaped protrusions (250-1100 nm in size). LEDs fabricated with the 7 s-etched ITO electrodes yield higher light output (by 31.7% at 20 mA) compared with LEDs made with unpatterned ITO electrodes. The improvement is attributed to the increased light escape probability via the randomly distributed sphere-shaped protrusions formed on the electrode surfaces.

AB - Wet-etching-induced surface patterning of p-type indium tin oxide (ITO) electrodes has been investigated to improve the light output of GaN-based light-emitting diodes (LEDs). Etching of as-deposited ITO layers in a buffered-oxide-etch solution results in the formation of a high density of randomly distributed sphere-shaped protrusions (250-1100 nm in size). LEDs fabricated with the 7 s-etched ITO electrodes yield higher light output (by 31.7% at 20 mA) compared with LEDs made with unpatterned ITO electrodes. The improvement is attributed to the increased light escape probability via the randomly distributed sphere-shaped protrusions formed on the electrode surfaces.

KW - GaN

KW - ITO

KW - LEDs

KW - Surface patterning

KW - Wet-etching

UR - http://www.scopus.com/inward/record.url?scp=34248594085&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34248594085&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2007.02.038

DO - 10.1016/j.sse.2007.02.038

M3 - Article

AN - SCOPUS:34248594085

VL - 51

SP - 793

EP - 796

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 5

ER -