Enhancement of the light output of GaN-based ultraviolet light-emitting diodes by a one-dimensional nanopatterning process

Hyun Gi Hong, Seok Soon Kim, Dong Yu Kim, Takhee Lee, June O. Song, J. H. Cho, C. Sone, Y. Park, Tae Yeon Seong

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

We have demonstrated the enhancement of the output power of ultraviolet GaN-based light-emitting diodes (LEDs) by using one-dimensionally nanopatterned Cu-doped indium oxide(CIO)/indium tin oxide (ITO) p -type contact layers. The one-dimensional (1D) nanopatterns (250 nm in width and 100 nm in depth) are defined using a Ti O2 1D nanomask fabricated by means of a surface relief grating technique. When fabricated with the nanopatterned p -contact layers, the output power of LEDs is improved by 40 and 63% at 20 mA as compared to those fabricated with the unpatterned CIO/ITO and conventional NiAu contacts, respectively.

Original languageEnglish
Article number103505
JournalApplied Physics Letters
Volume88
Issue number10
DOIs
Publication statusPublished - 2006 Mar 20

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ultraviolet radiation
indium oxides
light emitting diodes
augmentation
output
tin oxides
gratings

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Enhancement of the light output of GaN-based ultraviolet light-emitting diodes by a one-dimensional nanopatterning process. / Hong, Hyun Gi; Kim, Seok Soon; Kim, Dong Yu; Lee, Takhee; Song, June O.; Cho, J. H.; Sone, C.; Park, Y.; Seong, Tae Yeon.

In: Applied Physics Letters, Vol. 88, No. 10, 103505, 20.03.2006.

Research output: Contribution to journalArticle

Hong, Hyun Gi ; Kim, Seok Soon ; Kim, Dong Yu ; Lee, Takhee ; Song, June O. ; Cho, J. H. ; Sone, C. ; Park, Y. ; Seong, Tae Yeon. / Enhancement of the light output of GaN-based ultraviolet light-emitting diodes by a one-dimensional nanopatterning process. In: Applied Physics Letters. 2006 ; Vol. 88, No. 10.
@article{87646c172d0f4bcf8cc8fa62461d04c9,
title = "Enhancement of the light output of GaN-based ultraviolet light-emitting diodes by a one-dimensional nanopatterning process",
abstract = "We have demonstrated the enhancement of the output power of ultraviolet GaN-based light-emitting diodes (LEDs) by using one-dimensionally nanopatterned Cu-doped indium oxide(CIO)/indium tin oxide (ITO) p -type contact layers. The one-dimensional (1D) nanopatterns (250 nm in width and 100 nm in depth) are defined using a Ti O2 1D nanomask fabricated by means of a surface relief grating technique. When fabricated with the nanopatterned p -contact layers, the output power of LEDs is improved by 40 and 63{\%} at 20 mA as compared to those fabricated with the unpatterned CIO/ITO and conventional NiAu contacts, respectively.",
author = "Hong, {Hyun Gi} and Kim, {Seok Soon} and Kim, {Dong Yu} and Takhee Lee and Song, {June O.} and Cho, {J. H.} and C. Sone and Y. Park and Seong, {Tae Yeon}",
year = "2006",
month = "3",
day = "20",
doi = "10.1063/1.2174842",
language = "English",
volume = "88",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

TY - JOUR

T1 - Enhancement of the light output of GaN-based ultraviolet light-emitting diodes by a one-dimensional nanopatterning process

AU - Hong, Hyun Gi

AU - Kim, Seok Soon

AU - Kim, Dong Yu

AU - Lee, Takhee

AU - Song, June O.

AU - Cho, J. H.

AU - Sone, C.

AU - Park, Y.

AU - Seong, Tae Yeon

PY - 2006/3/20

Y1 - 2006/3/20

N2 - We have demonstrated the enhancement of the output power of ultraviolet GaN-based light-emitting diodes (LEDs) by using one-dimensionally nanopatterned Cu-doped indium oxide(CIO)/indium tin oxide (ITO) p -type contact layers. The one-dimensional (1D) nanopatterns (250 nm in width and 100 nm in depth) are defined using a Ti O2 1D nanomask fabricated by means of a surface relief grating technique. When fabricated with the nanopatterned p -contact layers, the output power of LEDs is improved by 40 and 63% at 20 mA as compared to those fabricated with the unpatterned CIO/ITO and conventional NiAu contacts, respectively.

AB - We have demonstrated the enhancement of the output power of ultraviolet GaN-based light-emitting diodes (LEDs) by using one-dimensionally nanopatterned Cu-doped indium oxide(CIO)/indium tin oxide (ITO) p -type contact layers. The one-dimensional (1D) nanopatterns (250 nm in width and 100 nm in depth) are defined using a Ti O2 1D nanomask fabricated by means of a surface relief grating technique. When fabricated with the nanopatterned p -contact layers, the output power of LEDs is improved by 40 and 63% at 20 mA as compared to those fabricated with the unpatterned CIO/ITO and conventional NiAu contacts, respectively.

UR - http://www.scopus.com/inward/record.url?scp=33644910710&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33644910710&partnerID=8YFLogxK

U2 - 10.1063/1.2174842

DO - 10.1063/1.2174842

M3 - Article

AN - SCOPUS:33644910710

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

M1 - 103505

ER -