Enhancement of the light output of GaN-based ultraviolet light-emitting diodes by a one-dimensional nanopatterning process

Hyun Gi Hong; Seok Soon Kim; Dong Yu Kim; Takhee Lee; June O. Song; J. H. Cho; C. Sone; Y. Park; Tae Yeon Seong

doi:10.1063/1.2174842

Enhancement of the light output of GaN-based ultraviolet light-emitting diodes by a one-dimensional nanopatterning process

Hyun Gi Hong, Seok Soon Kim, Dong Yu Kim, Takhee Lee, June O. Song, J. H. Cho, C. Sone, Y. Park, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

59 Citations (Scopus)

Abstract

We have demonstrated the enhancement of the output power of ultraviolet GaN-based light-emitting diodes (LEDs) by using one-dimensionally nanopatterned Cu-doped indium oxide(CIO)/indium tin oxide (ITO) p -type contact layers. The one-dimensional (1D) nanopatterns (250 nm in width and 100 nm in depth) are defined using a Ti O2 1D nanomask fabricated by means of a surface relief grating technique. When fabricated with the nanopatterned p -contact layers, the output power of LEDs is improved by 40 and 63% at 20 mA as compared to those fabricated with the unpatterned CIO/ITO and conventional NiAu contacts, respectively.

Original language	English
Article number	103505
Journal	Applied Physics Letters
Volume	88
Issue number	10
DOIs	https://doi.org/10.1063/1.2174842
Publication status	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2174842

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abstract = "We have demonstrated the enhancement of the output power of ultraviolet GaN-based light-emitting diodes (LEDs) by using one-dimensionally nanopatterned Cu-doped indium oxide(CIO)/indium tin oxide (ITO) p -type contact layers. The one-dimensional (1D) nanopatterns (250 nm in width and 100 nm in depth) are defined using a Ti O2 1D nanomask fabricated by means of a surface relief grating technique. When fabricated with the nanopatterned p -contact layers, the output power of LEDs is improved by 40 and 63% at 20 mA as compared to those fabricated with the unpatterned CIO/ITO and conventional NiAu contacts, respectively.",

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AU - Hong, Hyun Gi

AU - Kim, Seok Soon

AU - Kim, Dong Yu

AU - Lee, Takhee

AU - Song, June O.

AU - Cho, J. H.

AU - Sone, C.

AU - Park, Y.

AU - Seong, Tae Yeon

PY - 2006

Y1 - 2006

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AB - We have demonstrated the enhancement of the output power of ultraviolet GaN-based light-emitting diodes (LEDs) by using one-dimensionally nanopatterned Cu-doped indium oxide(CIO)/indium tin oxide (ITO) p -type contact layers. The one-dimensional (1D) nanopatterns (250 nm in width and 100 nm in depth) are defined using a Ti O2 1D nanomask fabricated by means of a surface relief grating technique. When fabricated with the nanopatterned p -contact layers, the output power of LEDs is improved by 40 and 63% at 20 mA as compared to those fabricated with the unpatterned CIO/ITO and conventional NiAu contacts, respectively.

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Enhancement of the light output of GaN-based ultraviolet light-emitting diodes by a one-dimensional nanopatterning process

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