Enhancement of the light output of GaN-based ultraviolet light-emitting diodes by a one-dimensional nanopatterning process

Hyun Gi Hong, Seok Soon Kim, Dong Yu Kim, Takhee Lee, June O. Song, J. H. Cho, C. Sone, Y. Park, Tae Yeon Seong

Research output: Contribution to journalArticle

56 Citations (Scopus)

Abstract

We have demonstrated the enhancement of the output power of ultraviolet GaN-based light-emitting diodes (LEDs) by using one-dimensionally nanopatterned Cu-doped indium oxide(CIO)/indium tin oxide (ITO) p -type contact layers. The one-dimensional (1D) nanopatterns (250 nm in width and 100 nm in depth) are defined using a Ti O2 1D nanomask fabricated by means of a surface relief grating technique. When fabricated with the nanopatterned p -contact layers, the output power of LEDs is improved by 40 and 63% at 20 mA as compared to those fabricated with the unpatterned CIO/ITO and conventional NiAu contacts, respectively.

Original languageEnglish
Article number103505
JournalApplied Physics Letters
Volume88
Issue number10
DOIs
Publication statusPublished - 2006 Mar 20

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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