The indium tin oxide (ITO) transparent electrode layer on green and blue light-emitting diodes (LEDs) was patterned with various-sized periodic hole arrays, size ranging from 300 nm to 380 nm, using thermal nanoimprint lithography and inductively coupled plasma (ICP) etching processes. The imprinted resin was used as a mask layer and etch resistance of the imprinted resin was adjusted in order to control the tapered and enlarged etch profile of the ITO layer, since the tapered etch profile can improve the light extraction efficiency of the LED by prominent scatterings. Photoluminescence intensity from InGaN multi-quantum wells for the green LED structure showed that up to 4.6 times stronger emission was exhibited with the patterned ITO electrode, compared to the identical sample with an un-patterned blanket ITO electrode layer. An electroluminescence (EL) intensity of a blue LED sample witha patterned ITO electrode layer was increased up to 23% compared to that of the identical sample with an un-patterned blanket ITO electrode layer.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry