Enhancement of the type-I transition in type-II ZnTe/CdSe Bragg confining structures

Youngho Um, Sang Hoon Lee, X. Liu, J. K. Furdyna

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Abstract

We have demonstrated highly effective Bragg confining structures of type-II superlattices using II-VI compound semiconductor materials, ZnTe/CdSe, to enhance the confinement of electron wave functions. In order to identify the Bragg confined states above the barrier, we use a diluted magnetic semiconductor (DMS) which exhibits giant Zeeman splitting in a magnetic field. We have observed the excitonic transitions which take place between the Bragg confined electrons above the barrier and the localized holes in the quantum well at higher energies than the band gap of the Zn0.94 Mn0.06 Te central layer. These transitions have been enhanced by 10 quarter-wave stacks of a ZnTe/CdSe Bragg reflector structure for the above-barrier electron states. The total confining energy of the electrons and the holes was found to be 28 meV at 1.5 K.

Original languageEnglish
Pages (from-to)429-432
Number of pages4
JournalJournal of the Korean Physical Society
Volume39
Issue number3
Publication statusPublished - 2001 Sep 1

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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