Enhancement of Trap-Assisted Green Electroluminescence Efficiency in ZnO/SiO2/Si Nanowire Light-Emitting Diodes on Bendable Substrates by Piezophototronic Effect

Kwangeun Kim; Youngin Jeon; Kyoungah Cho; Sangsig Kim

doi:10.1021/acsami.5b11053

Enhancement of Trap-Assisted Green Electroluminescence Efficiency in ZnO/SiO₂/Si Nanowire Light-Emitting Diodes on Bendable Substrates by Piezophototronic Effect

Kwangeun Kim, Youngin Jeon, Kyoungah Cho, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The trap-assisted green electroluminescence (EL) efficiency of a light-emitting diode (LED) consisting of a ZnO nanowire (NW), a SiO₂ layer, and a Si NW on a bendable substrate is enhanced by piezophototronic effect. The green EL originates from radiative recombination through deep-level defects such as interstitial zinc, interstitial oxygen, oxygen antisite, and zinc vacancy in the component ZnO NW. The efficiency of the trap-assisted green EL is enhanced by a piezophototronic factor of 2.79 under a strain of 0.006%. The piezoelectric field built up inside the component ZnO NW improves the recombination rate of the electron-hole pairs thereby enhancing the efficiency of the trap-assisted green EL.

Original language	English
Pages (from-to)	2764-2773
Number of pages	10
Journal	ACS Applied Materials and Interfaces
Volume	8
Issue number	4
DOIs	https://doi.org/10.1021/acsami.5b11053
Publication status	Published - 2016 Feb 3

Keywords

finite difference time domain
finite element method
nanowire
piezoelectronics
piezophototronics
trap-assisted electroluminescence
ZnO

ASJC Scopus subject areas

Materials Science(all)

Access to Document

10.1021/acsami.5b11053

Fingerprint Dive into the research topics of 'Enhancement of Trap-Assisted Green Electroluminescence Efficiency in ZnO/SiO<sub>2</sub>/Si Nanowire Light-Emitting Diodes on Bendable Substrates by Piezophototronic Effect'. Together they form a unique fingerprint.

Cite this

Enhancement of Trap-Assisted Green Electroluminescence Efficiency in ZnO/SiO₂/Si Nanowire Light-Emitting Diodes on Bendable Substrates by Piezophototronic Effect. / Kim, Kwangeun; Jeon, Youngin; Cho, Kyoungah; Kim, Sangsig.

In: ACS Applied Materials and Interfaces, Vol. 8, No. 4, 03.02.2016, p. 2764-2773.

Research output: Contribution to journal › Article › peer-review

@article{4aa9999109414b02a1d150993e5cd28c,

title = "Enhancement of Trap-Assisted Green Electroluminescence Efficiency in ZnO/SiO2/Si Nanowire Light-Emitting Diodes on Bendable Substrates by Piezophototronic Effect",

abstract = "The trap-assisted green electroluminescence (EL) efficiency of a light-emitting diode (LED) consisting of a ZnO nanowire (NW), a SiO2 layer, and a Si NW on a bendable substrate is enhanced by piezophototronic effect. The green EL originates from radiative recombination through deep-level defects such as interstitial zinc, interstitial oxygen, oxygen antisite, and zinc vacancy in the component ZnO NW. The efficiency of the trap-assisted green EL is enhanced by a piezophototronic factor of 2.79 under a strain of 0.006%. The piezoelectric field built up inside the component ZnO NW improves the recombination rate of the electron-hole pairs thereby enhancing the efficiency of the trap-assisted green EL.",

keywords = "finite difference time domain, finite element method, nanowire, piezoelectronics, piezophototronics, trap-assisted electroluminescence, ZnO",

author = "Kwangeun Kim and Youngin Jeon and Kyoungah Cho and Sangsig Kim",

year = "2016",

month = feb,

day = "3",

doi = "10.1021/acsami.5b11053",

language = "English",

volume = "8",

pages = "2764--2773",

journal = "ACS applied materials & interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "4",

}

TY - JOUR

T1 - Enhancement of Trap-Assisted Green Electroluminescence Efficiency in ZnO/SiO2/Si Nanowire Light-Emitting Diodes on Bendable Substrates by Piezophototronic Effect

AU - Kim, Kwangeun

AU - Jeon, Youngin

AU - Cho, Kyoungah

AU - Kim, Sangsig

PY - 2016/2/3

Y1 - 2016/2/3

N2 - The trap-assisted green electroluminescence (EL) efficiency of a light-emitting diode (LED) consisting of a ZnO nanowire (NW), a SiO2 layer, and a Si NW on a bendable substrate is enhanced by piezophototronic effect. The green EL originates from radiative recombination through deep-level defects such as interstitial zinc, interstitial oxygen, oxygen antisite, and zinc vacancy in the component ZnO NW. The efficiency of the trap-assisted green EL is enhanced by a piezophototronic factor of 2.79 under a strain of 0.006%. The piezoelectric field built up inside the component ZnO NW improves the recombination rate of the electron-hole pairs thereby enhancing the efficiency of the trap-assisted green EL.

AB - The trap-assisted green electroluminescence (EL) efficiency of a light-emitting diode (LED) consisting of a ZnO nanowire (NW), a SiO2 layer, and a Si NW on a bendable substrate is enhanced by piezophototronic effect. The green EL originates from radiative recombination through deep-level defects such as interstitial zinc, interstitial oxygen, oxygen antisite, and zinc vacancy in the component ZnO NW. The efficiency of the trap-assisted green EL is enhanced by a piezophototronic factor of 2.79 under a strain of 0.006%. The piezoelectric field built up inside the component ZnO NW improves the recombination rate of the electron-hole pairs thereby enhancing the efficiency of the trap-assisted green EL.

KW - finite difference time domain

KW - finite element method

KW - nanowire

KW - piezoelectronics

KW - piezophototronics

KW - trap-assisted electroluminescence

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=84957928461&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84957928461&partnerID=8YFLogxK

U2 - 10.1021/acsami.5b11053

DO - 10.1021/acsami.5b11053

M3 - Article

AN - SCOPUS:84957928461

VL - 8

SP - 2764

EP - 2773

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 4

ER -