Abstract
The trap-assisted green electroluminescence (EL) efficiency of a light-emitting diode (LED) consisting of a ZnO nanowire (NW), a SiO2 layer, and a Si NW on a bendable substrate is enhanced by piezophototronic effect. The green EL originates from radiative recombination through deep-level defects such as interstitial zinc, interstitial oxygen, oxygen antisite, and zinc vacancy in the component ZnO NW. The efficiency of the trap-assisted green EL is enhanced by a piezophototronic factor of 2.79 under a strain of 0.006%. The piezoelectric field built up inside the component ZnO NW improves the recombination rate of the electron-hole pairs thereby enhancing the efficiency of the trap-assisted green EL.
| Original language | English |
|---|---|
| Pages (from-to) | 2764-2773 |
| Number of pages | 10 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 8 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2016 Feb 3 |
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Keywords
- finite difference time domain
- finite element method
- nanowire
- piezoelectronics
- piezophototronics
- trap-assisted electroluminescence
- ZnO
ASJC Scopus subject areas
- Materials Science(all)
Cite this
Enhancement of Trap-Assisted Green Electroluminescence Efficiency in ZnO/SiO2/Si Nanowire Light-Emitting Diodes on Bendable Substrates by Piezophototronic Effect. / Kim, Kwangeun; Jeon, Youngin; Cho, Kyoungah; Kim, Sangsig.
In: ACS Applied Materials and Interfaces, Vol. 8, No. 4, 03.02.2016, p. 2764-2773.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Enhancement of Trap-Assisted Green Electroluminescence Efficiency in ZnO/SiO2/Si Nanowire Light-Emitting Diodes on Bendable Substrates by Piezophototronic Effect
AU - Kim, Kwangeun
AU - Jeon, Youngin
AU - Cho, Kyoungah
AU - Kim, Sangsig
PY - 2016/2/3
Y1 - 2016/2/3
N2 - The trap-assisted green electroluminescence (EL) efficiency of a light-emitting diode (LED) consisting of a ZnO nanowire (NW), a SiO2 layer, and a Si NW on a bendable substrate is enhanced by piezophototronic effect. The green EL originates from radiative recombination through deep-level defects such as interstitial zinc, interstitial oxygen, oxygen antisite, and zinc vacancy in the component ZnO NW. The efficiency of the trap-assisted green EL is enhanced by a piezophototronic factor of 2.79 under a strain of 0.006%. The piezoelectric field built up inside the component ZnO NW improves the recombination rate of the electron-hole pairs thereby enhancing the efficiency of the trap-assisted green EL.
AB - The trap-assisted green electroluminescence (EL) efficiency of a light-emitting diode (LED) consisting of a ZnO nanowire (NW), a SiO2 layer, and a Si NW on a bendable substrate is enhanced by piezophototronic effect. The green EL originates from radiative recombination through deep-level defects such as interstitial zinc, interstitial oxygen, oxygen antisite, and zinc vacancy in the component ZnO NW. The efficiency of the trap-assisted green EL is enhanced by a piezophototronic factor of 2.79 under a strain of 0.006%. The piezoelectric field built up inside the component ZnO NW improves the recombination rate of the electron-hole pairs thereby enhancing the efficiency of the trap-assisted green EL.
KW - finite difference time domain
KW - finite element method
KW - nanowire
KW - piezoelectronics
KW - piezophototronics
KW - trap-assisted electroluminescence
KW - ZnO
UR - http://www.scopus.com/inward/record.url?scp=84957928461&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84957928461&partnerID=8YFLogxK
U2 - 10.1021/acsami.5b11053
DO - 10.1021/acsami.5b11053
M3 - Article
AN - SCOPUS:84957928461
VL - 8
SP - 2764
EP - 2773
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 4
ER -