Enhancement of Trap-Assisted Green Electroluminescence Efficiency in ZnO/SiO2/Si Nanowire Light-Emitting Diodes on Bendable Substrates by Piezophototronic Effect

Kwangeun Kim; Youngin Jeon; Kyoungah Cho; Sangsig Kim

doi:10.1021/acsami.5b11053

Enhancement of Trap-Assisted Green Electroluminescence Efficiency in ZnO/SiO₂/Si Nanowire Light-Emitting Diodes on Bendable Substrates by Piezophototronic Effect

Kwangeun Kim, Youngin Jeon, Kyoungah Cho, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The trap-assisted green electroluminescence (EL) efficiency of a light-emitting diode (LED) consisting of a ZnO nanowire (NW), a SiO₂ layer, and a Si NW on a bendable substrate is enhanced by piezophototronic effect. The green EL originates from radiative recombination through deep-level defects such as interstitial zinc, interstitial oxygen, oxygen antisite, and zinc vacancy in the component ZnO NW. The efficiency of the trap-assisted green EL is enhanced by a piezophototronic factor of 2.79 under a strain of 0.006%. The piezoelectric field built up inside the component ZnO NW improves the recombination rate of the electron-hole pairs thereby enhancing the efficiency of the trap-assisted green EL.

Original language	English
Pages (from-to)	2764-2773
Number of pages	10
Journal	ACS Applied Materials and Interfaces
Volume	8
Issue number	4
DOIs	https://doi.org/10.1021/acsami.5b11053
Publication status	Published - 2016 Feb 3

Keywords

ZnO
finite difference time domain
finite element method
nanowire
piezoelectronics
piezophototronics
trap-assisted electroluminescence

ASJC Scopus subject areas

Materials Science(all)

Access to Document

10.1021/acsami.5b11053

Cite this

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title = "Enhancement of Trap-Assisted Green Electroluminescence Efficiency in ZnO/SiO2/Si Nanowire Light-Emitting Diodes on Bendable Substrates by Piezophototronic Effect",

abstract = "The trap-assisted green electroluminescence (EL) efficiency of a light-emitting diode (LED) consisting of a ZnO nanowire (NW), a SiO2 layer, and a Si NW on a bendable substrate is enhanced by piezophototronic effect. The green EL originates from radiative recombination through deep-level defects such as interstitial zinc, interstitial oxygen, oxygen antisite, and zinc vacancy in the component ZnO NW. The efficiency of the trap-assisted green EL is enhanced by a piezophototronic factor of 2.79 under a strain of 0.006%. The piezoelectric field built up inside the component ZnO NW improves the recombination rate of the electron-hole pairs thereby enhancing the efficiency of the trap-assisted green EL.",

keywords = "ZnO, finite difference time domain, finite element method, nanowire, piezoelectronics, piezophototronics, trap-assisted electroluminescence",

author = "Kwangeun Kim and Youngin Jeon and Kyoungah Cho and Sangsig Kim",

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AU - Jeon, Youngin

AU - Cho, Kyoungah

AU - Kim, Sangsig

PY - 2016/2/3

Y1 - 2016/2/3

N2 - The trap-assisted green electroluminescence (EL) efficiency of a light-emitting diode (LED) consisting of a ZnO nanowire (NW), a SiO2 layer, and a Si NW on a bendable substrate is enhanced by piezophototronic effect. The green EL originates from radiative recombination through deep-level defects such as interstitial zinc, interstitial oxygen, oxygen antisite, and zinc vacancy in the component ZnO NW. The efficiency of the trap-assisted green EL is enhanced by a piezophototronic factor of 2.79 under a strain of 0.006%. The piezoelectric field built up inside the component ZnO NW improves the recombination rate of the electron-hole pairs thereby enhancing the efficiency of the trap-assisted green EL.

AB - The trap-assisted green electroluminescence (EL) efficiency of a light-emitting diode (LED) consisting of a ZnO nanowire (NW), a SiO2 layer, and a Si NW on a bendable substrate is enhanced by piezophototronic effect. The green EL originates from radiative recombination through deep-level defects such as interstitial zinc, interstitial oxygen, oxygen antisite, and zinc vacancy in the component ZnO NW. The efficiency of the trap-assisted green EL is enhanced by a piezophototronic factor of 2.79 under a strain of 0.006%. The piezoelectric field built up inside the component ZnO NW improves the recombination rate of the electron-hole pairs thereby enhancing the efficiency of the trap-assisted green EL.

KW - ZnO

KW - finite difference time domain

KW - finite element method

KW - nanowire

KW - piezoelectronics

KW - piezophototronics

KW - trap-assisted electroluminescence

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