Enhancement of Trap-Assisted Green Electroluminescence Efficiency in ZnO/SiO2/Si Nanowire Light-Emitting Diodes on Bendable Substrates by Piezophototronic Effect

Kwangeun Kim; Youngin Jeon; Kyoungah Cho; Sangsig Kim

doi:10.1021/acsami.5b11053

Enhancement of Trap-Assisted Green Electroluminescence Efficiency in ZnO/SiO₂/Si Nanowire Light-Emitting Diodes on Bendable Substrates by Piezophototronic Effect

Kwangeun Kim, Youngin Jeon, Kyoungah Cho, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

The trap-assisted green electroluminescence (EL) efficiency of a light-emitting diode (LED) consisting of a ZnO nanowire (NW), a SiO₂ layer, and a Si NW on a bendable substrate is enhanced by piezophototronic effect. The green EL originates from radiative recombination through deep-level defects such as interstitial zinc, interstitial oxygen, oxygen antisite, and zinc vacancy in the component ZnO NW. The efficiency of the trap-assisted green EL is enhanced by a piezophototronic factor of 2.79 under a strain of 0.006%. The piezoelectric field built up inside the component ZnO NW improves the recombination rate of the electron-hole pairs thereby enhancing the efficiency of the trap-assisted green EL.

Original language	English
Pages (from-to)	2764-2773
Number of pages	10
Journal	ACS Applied Materials and Interfaces
Volume	8
Issue number	4
DOIs	https://doi.org/10.1021/acsami.5b11053
Publication status	Published - 2016 Feb 3

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Keywords

finite difference time domain
finite element method
nanowire
piezoelectronics
piezophototronics
trap-assisted electroluminescence
ZnO

ASJC Scopus subject areas

Materials Science(all)

Cite this

Kim, K., Jeon, Y., Cho, K., & Kim, S. (2016). Enhancement of Trap-Assisted Green Electroluminescence Efficiency in ZnO/SiO₂/Si Nanowire Light-Emitting Diodes on Bendable Substrates by Piezophototronic Effect. ACS Applied Materials and Interfaces, 8(4), 2764-2773. https://doi.org/10.1021/acsami.5b11053

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abstract = "The trap-assisted green electroluminescence (EL) efficiency of a light-emitting diode (LED) consisting of a ZnO nanowire (NW), a SiO2 layer, and a Si NW on a bendable substrate is enhanced by piezophototronic effect. The green EL originates from radiative recombination through deep-level defects such as interstitial zinc, interstitial oxygen, oxygen antisite, and zinc vacancy in the component ZnO NW. The efficiency of the trap-assisted green EL is enhanced by a piezophototronic factor of 2.79 under a strain of 0.006%. The piezoelectric field built up inside the component ZnO NW improves the recombination rate of the electron-hole pairs thereby enhancing the efficiency of the trap-assisted green EL.",

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KW - finite element method

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Access to Document

10.1021/acsami.5b11053