Enhancement of Trap-Assisted Green Electroluminescence Efficiency in ZnO/SiO2/Si Nanowire Light-Emitting Diodes on Bendable Substrates by Piezophototronic Effect

Kwangeun Kim, Youngin Jeon, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)


The trap-assisted green electroluminescence (EL) efficiency of a light-emitting diode (LED) consisting of a ZnO nanowire (NW), a SiO2 layer, and a Si NW on a bendable substrate is enhanced by piezophototronic effect. The green EL originates from radiative recombination through deep-level defects such as interstitial zinc, interstitial oxygen, oxygen antisite, and zinc vacancy in the component ZnO NW. The efficiency of the trap-assisted green EL is enhanced by a piezophototronic factor of 2.79 under a strain of 0.006%. The piezoelectric field built up inside the component ZnO NW improves the recombination rate of the electron-hole pairs thereby enhancing the efficiency of the trap-assisted green EL.

Original languageEnglish
Pages (from-to)2764-2773
Number of pages10
JournalACS Applied Materials and Interfaces
Issue number4
Publication statusPublished - 2016 Feb 3



  • finite difference time domain
  • finite element method
  • nanowire
  • piezoelectronics
  • piezophototronics
  • trap-assisted electroluminescence
  • ZnO

ASJC Scopus subject areas

  • Materials Science(all)

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