TY - JOUR
T1 - Enhancement of Trap-Assisted Green Electroluminescence Efficiency in ZnO/SiO2/Si Nanowire Light-Emitting Diodes on Bendable Substrates by Piezophototronic Effect
AU - Kim, Kwangeun
AU - Jeon, Youngin
AU - Cho, Kyoungah
AU - Kim, Sangsig
PY - 2016/2/3
Y1 - 2016/2/3
N2 - The trap-assisted green electroluminescence (EL) efficiency of a light-emitting diode (LED) consisting of a ZnO nanowire (NW), a SiO2 layer, and a Si NW on a bendable substrate is enhanced by piezophototronic effect. The green EL originates from radiative recombination through deep-level defects such as interstitial zinc, interstitial oxygen, oxygen antisite, and zinc vacancy in the component ZnO NW. The efficiency of the trap-assisted green EL is enhanced by a piezophototronic factor of 2.79 under a strain of 0.006%. The piezoelectric field built up inside the component ZnO NW improves the recombination rate of the electron-hole pairs thereby enhancing the efficiency of the trap-assisted green EL.
AB - The trap-assisted green electroluminescence (EL) efficiency of a light-emitting diode (LED) consisting of a ZnO nanowire (NW), a SiO2 layer, and a Si NW on a bendable substrate is enhanced by piezophototronic effect. The green EL originates from radiative recombination through deep-level defects such as interstitial zinc, interstitial oxygen, oxygen antisite, and zinc vacancy in the component ZnO NW. The efficiency of the trap-assisted green EL is enhanced by a piezophototronic factor of 2.79 under a strain of 0.006%. The piezoelectric field built up inside the component ZnO NW improves the recombination rate of the electron-hole pairs thereby enhancing the efficiency of the trap-assisted green EL.
KW - finite difference time domain
KW - finite element method
KW - nanowire
KW - piezoelectronics
KW - piezophototronics
KW - trap-assisted electroluminescence
KW - ZnO
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U2 - 10.1021/acsami.5b11053
DO - 10.1021/acsami.5b11053
M3 - Article
AN - SCOPUS:84957928461
VL - 8
SP - 2764
EP - 2773
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 4
ER -