Environmental Ozone Effect on the Growth of Hemispherical Grained Silicon for ULSI DRAM Stacked Capacitor

Young Kyou Park, Hyun Joon Kim, Dong Won Kim, Jung ho Park

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Hemispherical grained silicon (HSG Si) is a state-of-the-art method used to increase the surface area of the bottom electrode in an ultralarge-scale integration dynamic random access memory (ULSI DRAM) stacked capacitor. Since contaminants affect the formation and growth of HSG Si, the control of surface cleanliness on amorphous Si of the bottom electrode is crucial. The most critical contaminant is native oxide which forms when amorphous Si surface of the bottom electrode is exposed to air. Native oxide growth is mainly influenced by airborne ozone (O3). In this work, it is shown that the native oxide grows linearly with exposure time to O3. Also we show that there is a high growth rate of native oxide at a high concentration of O3, and that HSG-Si formation in O3 is related to crystalline quality, morphology, and reflectivity. Electrical characteristics of HSG Si are evaluated with respective O3 conditions and a variation of capacitance is observed. Additionally, an in situ precleaning process followed by the growth of HSG Si under vacuum and implementation of O3 chemical filters are proposed in order to control O3.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume148
Issue number8
DOIs
Publication statusPublished - 2001 Aug 1

Fingerprint

Ozone
random access memory
Silicon
Oxides
ozone
capacitors
Capacitors
Data storage equipment
oxides
silicon
Electrodes
contaminants
electrodes
Impurities
cleanliness
Capacitance
capacitance
Vacuum
Crystalline materials
reflectance

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Environmental Ozone Effect on the Growth of Hemispherical Grained Silicon for ULSI DRAM Stacked Capacitor. / Park, Young Kyou; Kim, Hyun Joon; Kim, Dong Won; Park, Jung ho.

In: Journal of the Electrochemical Society, Vol. 148, No. 8, 01.08.2001.

Research output: Contribution to journalArticle

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