Epitaxial GaN microdisk lasers grown on graphene microdots

Hyeonjun Baek, Chul Ho Lee, Kunook Chung, Gyu Chul Yi

Research output: Contribution to journalArticlepeer-review

77 Citations (Scopus)


Direct epitaxial growth of inorganic compound semiconductors on lattice-matched single-crystal substrates has provided an important way to fabricate light sources for various applications including lighting, displays and optical communications. Nevertheless, unconventional substrates such as silicon, amorphous glass, plastics, and metals must be used for emerging optoelectronic applications, such as high-speed photonic circuitry and flexible displays. However, high-quality film growth requires good matching of lattice constants and thermal expansion coefficients between the film and the supporting substrate. This restricts monolithic fabrication of optoelectronic devices on unconventional substrates. Here, we describe methods to grow high-quality gallium nitride (GaN) microdisks on amorphous silicon oxide layers formed on silicon using micropatterned graphene films as a nucleation layer. Highly crystalline GaN microdisks having hexagonal facets were grown on graphene dots with intermediate ZnO nanowalls via epitaxial lateral overgrowth. Furthermore, whispering-gallery-mode lasing from the GaN microdisk with a Q-factor of 1200 was observed at room temperature.

Original languageEnglish
Pages (from-to)2782-2785
Number of pages4
JournalNano Letters
Issue number6
Publication statusPublished - 2013 Jun 12
Externally publishedYes


  • GaN
  • ZnO
  • graphene
  • heterostructures
  • laser
  • whispering-gallery-mode

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering


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