Epitaxial growth of crack-free GaN on patterned Si(111) substrate

Seung Jae Lee, Gyu Hyeong Bak, Seong Ran Jeon, Sang Hern Lee, Sang Mook Kim, Sung Hoon Jung, Cheul Ro Lee, In-Hwan Lee, Shi Jong Leem, Jong Hyeob Baek

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Abstract

High-quality GaN epilayers were grown on patterned Si(111) substrates by metalorganic chemical vapor deposition. Crack-free GaN epilayers were obtained by growing the GaN on the plateau of the patterned Si(111) substrate. A high-temperature AlN buffer layer improved the crystalline quality of the GaN epilayer. When the growth temperature of the AlN buffer layer was 1000°C, the GaN epitaxial layer showed a smooth surface and high crystalline quality. The dislocation density of the subsequently grown GaN layer was 2 × 109 cm-2, which is comparable to those of conventional GaN epilayers grown on sapphire substrate.

Original languageEnglish
Pages (from-to)3070-3073
Number of pages4
JournalJapanese Journal of Applied Physics
Volume47
Issue number4 PART 2
DOIs
Publication statusPublished - 2008 Apr 25
Externally publishedYes

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Keywords

  • Aln
  • GaN
  • MOCVD
  • Silicon

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Lee, S. J., Bak, G. H., Jeon, S. R., Lee, S. H., Kim, S. M., Jung, S. H., Lee, C. R., Lee, I-H., Leem, S. J., & Baek, J. H. (2008). Epitaxial growth of crack-free GaN on patterned Si(111) substrate. Japanese Journal of Applied Physics, 47(4 PART 2), 3070-3073. https://doi.org/10.1143/JJAP.47.3070