Epitaxial growth of crack-free GaN on patterned Si(111) substrate

Seung Jae Lee; Gyu Hyeong Bak; Seong Ran Jeon; Sang Hern Lee; Sang Mook Kim; Sung Hoon Jung; Cheul Ro Lee; In Hwan Lee; Shi Jong Leem; Jong Hyeob Baek

doi:10.1143/JJAP.47.3070

Epitaxial growth of crack-free GaN on patterned Si(111) substrate

Seung Jae Lee, Gyu Hyeong Bak, Seong Ran Jeon, Sang Hern Lee, Sang Mook Kim, Sung Hoon Jung, Cheul Ro Lee, In Hwan Lee, Shi Jong Leem, Jong Hyeob Baek

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

High-quality GaN epilayers were grown on patterned Si(111) substrates by metalorganic chemical vapor deposition. Crack-free GaN epilayers were obtained by growing the GaN on the plateau of the patterned Si(111) substrate. A high-temperature AlN buffer layer improved the crystalline quality of the GaN epilayer. When the growth temperature of the AlN buffer layer was 1000°C, the GaN epitaxial layer showed a smooth surface and high crystalline quality. The dislocation density of the subsequently grown GaN layer was 2 × 10⁹ cm^-2, which is comparable to those of conventional GaN epilayers grown on sapphire substrate.

Original language	English
Pages (from-to)	3070-3073
Number of pages	4
Journal	Japanese journal of applied physics
Volume	47
Issue number	4 PART 2
DOIs	https://doi.org/10.1143/JJAP.47.3070
Publication status	Published - 2008 Apr 25
Externally published	Yes

Keywords

Aln
GaN
MOCVD
Silicon

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.47.3070

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title = "Epitaxial growth of crack-free GaN on patterned Si(111) substrate",

abstract = "High-quality GaN epilayers were grown on patterned Si(111) substrates by metalorganic chemical vapor deposition. Crack-free GaN epilayers were obtained by growing the GaN on the plateau of the patterned Si(111) substrate. A high-temperature AlN buffer layer improved the crystalline quality of the GaN epilayer. When the growth temperature of the AlN buffer layer was 1000°C, the GaN epitaxial layer showed a smooth surface and high crystalline quality. The dislocation density of the subsequently grown GaN layer was 2 × 109 cm-2, which is comparable to those of conventional GaN epilayers grown on sapphire substrate.",

keywords = "Aln, GaN, MOCVD, Silicon",

author = "Lee, {Seung Jae} and Bak, {Gyu Hyeong} and Jeon, {Seong Ran} and Lee, {Sang Hern} and Kim, {Sang Mook} and Jung, {Sung Hoon} and Lee, {Cheul Ro} and Lee, {In Hwan} and Leem, {Shi Jong} and Baek, {Jong Hyeob}",

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AU - Lee, Seung Jae

AU - Bak, Gyu Hyeong

AU - Jeon, Seong Ran

AU - Lee, Sang Hern

AU - Kim, Sang Mook

AU - Jung, Sung Hoon

AU - Lee, Cheul Ro

AU - Lee, In Hwan

AU - Leem, Shi Jong

AU - Baek, Jong Hyeob

PY - 2008/4/25

Y1 - 2008/4/25

N2 - High-quality GaN epilayers were grown on patterned Si(111) substrates by metalorganic chemical vapor deposition. Crack-free GaN epilayers were obtained by growing the GaN on the plateau of the patterned Si(111) substrate. A high-temperature AlN buffer layer improved the crystalline quality of the GaN epilayer. When the growth temperature of the AlN buffer layer was 1000°C, the GaN epitaxial layer showed a smooth surface and high crystalline quality. The dislocation density of the subsequently grown GaN layer was 2 × 109 cm-2, which is comparable to those of conventional GaN epilayers grown on sapphire substrate.

AB - High-quality GaN epilayers were grown on patterned Si(111) substrates by metalorganic chemical vapor deposition. Crack-free GaN epilayers were obtained by growing the GaN on the plateau of the patterned Si(111) substrate. A high-temperature AlN buffer layer improved the crystalline quality of the GaN epilayer. When the growth temperature of the AlN buffer layer was 1000°C, the GaN epitaxial layer showed a smooth surface and high crystalline quality. The dislocation density of the subsequently grown GaN layer was 2 × 109 cm-2, which is comparable to those of conventional GaN epilayers grown on sapphire substrate.

KW - Aln

KW - GaN

KW - MOCVD

KW - Silicon

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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IS - 4 PART 2

ER -

Epitaxial growth of crack-free GaN on patterned Si(111) substrate

Abstract

Keywords

ASJC Scopus subject areas

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