Epitaxial growth of crack-free GaN on patterned Si(111) substrate

Seung Jae Lee, Gyu Hyeong Bak, Seong Ran Jeon, Sang Hern Lee, Sang Mook Kim, Sung Hoon Jung, Cheul Ro Lee, In Hwan Lee, Shi Jong Leem, Jong Hyeob Baek

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20 Citations (Scopus)

Abstract

High-quality GaN epilayers were grown on patterned Si(111) substrates by metalorganic chemical vapor deposition. Crack-free GaN epilayers were obtained by growing the GaN on the plateau of the patterned Si(111) substrate. A high-temperature AlN buffer layer improved the crystalline quality of the GaN epilayer. When the growth temperature of the AlN buffer layer was 1000°C, the GaN epitaxial layer showed a smooth surface and high crystalline quality. The dislocation density of the subsequently grown GaN layer was 2 × 109 cm-2, which is comparable to those of conventional GaN epilayers grown on sapphire substrate.

Original languageEnglish
Pages (from-to)3070-3073
Number of pages4
JournalJapanese journal of applied physics
Volume47
Issue number4 PART 2
DOIs
Publication statusPublished - 2008 Apr 25
Externally publishedYes

Keywords

  • Aln
  • GaN
  • MOCVD
  • Silicon

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Lee, S. J., Bak, G. H., Jeon, S. R., Lee, S. H., Kim, S. M., Jung, S. H., Lee, C. R., Lee, I. H., Leem, S. J., & Baek, J. H. (2008). Epitaxial growth of crack-free GaN on patterned Si(111) substrate. Japanese journal of applied physics, 47(4 PART 2), 3070-3073. https://doi.org/10.1143/JJAP.47.3070