Epitaxial growth of Cr2O3 thin film on Al 2O3 (0001) substrate by radio frequency magnetron sputtering combined with rapid-thermal annealing

Sang Yong Jeong, Jin Bok Lee, Hyunseok Na, Tae Yeon Seong

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We prepared epitaxially grown Cr2O3 thin films on Al2O3 (0001) substrate by using radio frequency magnetron sputtering at room temperature followed by a rapid-thermal annealing process. It is shown that the phase and the crystallinity of as-grown samples depend on the flow ratios of the working gas (Ar/O2). X-ray diffraction (XRD) results show that oxygen-rich CrO3 phase having preferred orientation is formed when sputter-grown at room temperature under the working gas (Ar/O2) flow ratios of 9:1 and 7:3. XRD Φ-scanning results exhibit that annealing causes the oxygen-rich CrO3 phase to transform into epitaxial Cr2O3 phase, which is confirmed by X-ray photoemission spectroscopy. The samples grown at the gas flow ratio of 9:1 exhibit very smooth surfaces with root mean square roughness of 0.1-0.3 nm.

Original languageEnglish
Pages (from-to)4813-4816
Number of pages4
JournalThin Solid Films
Volume518
Issue number17
DOIs
Publication statusPublished - 2010 Jun 30

Fingerprint

Rapid thermal annealing
Epitaxial growth
Magnetron sputtering
radio frequencies
magnetron sputtering
Gases
Oxygen
X ray diffraction
Thin films
annealing
Substrates
Photoelectron spectroscopy
thin films
X ray spectroscopy
Flow of gases
x rays
Surface roughness
room temperature
oxygen
Annealing

Keywords

  • Chromium Oxide
  • Epitaxial growth
  • Radio frequency magnetron sputtering
  • X-ray diffraction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Epitaxial growth of Cr2O3 thin film on Al 2O3 (0001) substrate by radio frequency magnetron sputtering combined with rapid-thermal annealing. / Jeong, Sang Yong; Lee, Jin Bok; Na, Hyunseok; Seong, Tae Yeon.

In: Thin Solid Films, Vol. 518, No. 17, 30.06.2010, p. 4813-4816.

Research output: Contribution to journalArticle

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AU - Jeong, Sang Yong

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AU - Na, Hyunseok

AU - Seong, Tae Yeon

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N2 - We prepared epitaxially grown Cr2O3 thin films on Al2O3 (0001) substrate by using radio frequency magnetron sputtering at room temperature followed by a rapid-thermal annealing process. It is shown that the phase and the crystallinity of as-grown samples depend on the flow ratios of the working gas (Ar/O2). X-ray diffraction (XRD) results show that oxygen-rich CrO3 phase having preferred orientation is formed when sputter-grown at room temperature under the working gas (Ar/O2) flow ratios of 9:1 and 7:3. XRD Φ-scanning results exhibit that annealing causes the oxygen-rich CrO3 phase to transform into epitaxial Cr2O3 phase, which is confirmed by X-ray photoemission spectroscopy. The samples grown at the gas flow ratio of 9:1 exhibit very smooth surfaces with root mean square roughness of 0.1-0.3 nm.

AB - We prepared epitaxially grown Cr2O3 thin films on Al2O3 (0001) substrate by using radio frequency magnetron sputtering at room temperature followed by a rapid-thermal annealing process. It is shown that the phase and the crystallinity of as-grown samples depend on the flow ratios of the working gas (Ar/O2). X-ray diffraction (XRD) results show that oxygen-rich CrO3 phase having preferred orientation is formed when sputter-grown at room temperature under the working gas (Ar/O2) flow ratios of 9:1 and 7:3. XRD Φ-scanning results exhibit that annealing causes the oxygen-rich CrO3 phase to transform into epitaxial Cr2O3 phase, which is confirmed by X-ray photoemission spectroscopy. The samples grown at the gas flow ratio of 9:1 exhibit very smooth surfaces with root mean square roughness of 0.1-0.3 nm.

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