Epitaxial growth of molecular crystals on van der Waals substrates for high-performance organic electronics

Chul Ho Lee, Theanne Schiros, Elton J.G. Santos, Bumjung Kim, Kevin G. Yager, Seok Ju Kang, Sunwoo Lee, Jaeeun Yu, Kenji Watanabe, Takashi Taniguchi, James Hone, Efthimios Kaxiras, Colin Nuckolls, Philip Kim

Research output: Contribution to journalArticle

88 Citations (Scopus)

Abstract

Epitaxial van der Waals (vdW) heterostructures of organic and layered materials are demonstrated to create high-performance organic electronic devices. High-quality rubrene films with large single-crystalline domains are grown on h-BN dielectric layers via vdW epitaxy. In addition, high carrier mobility comparable to free-standing single-crystal counterparts is achieved by forming interfacial electrical contacts with graphene electrodes.

Original languageEnglish
Pages (from-to)2812-2817
Number of pages6
JournalAdvanced Materials
Volume26
Issue number18
DOIs
Publication statusPublished - 2014 May 14
Externally publishedYes

Keywords

  • hexagonal boron nitride (h-BN)
  • organic semiconductors organic field-effect transistors
  • rubrene
  • van der Waals heterostructures

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Lee, C. H., Schiros, T., Santos, E. J. G., Kim, B., Yager, K. G., Kang, S. J., Lee, S., Yu, J., Watanabe, K., Taniguchi, T., Hone, J., Kaxiras, E., Nuckolls, C., & Kim, P. (2014). Epitaxial growth of molecular crystals on van der Waals substrates for high-performance organic electronics. Advanced Materials, 26(18), 2812-2817. https://doi.org/10.1002/adma.201304973