Epitaxial lateral overgrowth of GaN on sapphire substrate using high-dose N+ -ion-implantation

Bumjoon Kim, Samseok Jang, Sangil Kim, Youngseok Kim, Jaesang Lee, Dong Jin Byun

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

An epitaxial laterally overgrown (ELOG) GaN layer was deposited on a (0001) sapphire substrate. Here we introduce a maskless and single-step epitaxial lateral overgrowth (ELO) process using high-dose N+ -ion-implantation. We employed high-dose N+ -ion-implantation as an ELO mask instead of usual dielectric material such as Six Ny or SiO2. The GaN layer was laterally grown over the ion implanted array formed in a stripe pattern of 4 μm width, resulting in a complete coalescence after approximately 2.5 μm of growth in the [0001] direction. Transmission electron microscopy and photoluminescence analysis confirmed the reduced dislocation density of the ELO grown GaN layer.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume157
Issue number12
DOIs
Publication statusPublished - 2010 Nov 24

Fingerprint

Aluminum Oxide
Sapphire
Ion implantation
ion implantation
sapphire
dosage
Substrates
Coalescence
Masks
Photoluminescence
Ions
Transmission electron microscopy
coalescing
masks
photoluminescence
transmission electron microscopy
ions
Direction compound

ASJC Scopus subject areas

  • Electrochemistry
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics

Cite this

Epitaxial lateral overgrowth of GaN on sapphire substrate using high-dose N+ -ion-implantation. / Kim, Bumjoon; Jang, Samseok; Kim, Sangil; Kim, Youngseok; Lee, Jaesang; Byun, Dong Jin.

In: Journal of the Electrochemical Society, Vol. 157, No. 12, 24.11.2010.

Research output: Contribution to journalArticle

Kim, Bumjoon ; Jang, Samseok ; Kim, Sangil ; Kim, Youngseok ; Lee, Jaesang ; Byun, Dong Jin. / Epitaxial lateral overgrowth of GaN on sapphire substrate using high-dose N+ -ion-implantation. In: Journal of the Electrochemical Society. 2010 ; Vol. 157, No. 12.
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