An epitaxial laterally overgrown (ELOG) GaN layer was deposited on a (0001) sapphire substrate. Here we introduce a maskless and single-step epitaxial lateral overgrowth (ELO) process using high-dose N+ -ion-implantation. We employed high-dose N+ -ion-implantation as an ELO mask instead of usual dielectric material such as Six Ny or SiO2. The GaN layer was laterally grown over the ion implanted array formed in a stripe pattern of 4 μm width, resulting in a complete coalescence after approximately 2.5 μm of growth in the  direction. Transmission electron microscopy and photoluminescence analysis confirmed the reduced dislocation density of the ELO grown GaN layer.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry