Epitaxial lateral overgrowth of GaN on sapphire substrates using in-situ carbonized photoresist mask

Sang Il Kim, Bumjoon Kim, Samseok Jang, A. Young Kim, Jihun Park, Dong Jin Byun

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Epitaxial lateral overgrowth (ELO) GaN samples were successfully grown on masked sapphire (0 0 0 1) substrates using an in-situ carbonized photoresist (PR) mask by a metalorganic chemical vapor deposition (MOCVD) method. The PR masks for the ELO process were prepared using conventional lithography in the form of a stripe with an opening of 4 μm and a period of 16 μm. The stripe-patterned PR was annealed at 1000 °C in a H2 atmosphere. The stripes were aligned parallel to the [11-20]Al O3direction. The ELO process of GaN was strongly dependent on the direction of the stripes. Overall, the PR masks on the sapphire substrate were carbonized during the heating step before the main growth, so that the carbonized PR mask acted as an ELO mask. The study results confirmed the promising potential of the ELO process using an in-situ carbonized PR mask as a single-step technique.

Original languageEnglish
Pages (from-to)200-204
Number of pages5
JournalJournal of Crystal Growth
Volume326
Issue number1
DOIs
Publication statusPublished - 2011 Jul 1

Keywords

  • A3. Metalorganic chemical vapor deposition
  • B1. Gallium compounds
  • B1. Nitrides
  • B2. Semiconducting IIIV materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Fingerprint Dive into the research topics of 'Epitaxial lateral overgrowth of GaN on sapphire substrates using in-situ carbonized photoresist mask'. Together they form a unique fingerprint.

  • Cite this