Epitaxial lateral overgrowth of GaN on sapphire substrates using in-situ carbonized photoresist mask

Sang Il Kim; Bumjoon Kim; Samseok Jang; A. Young Kim; Jihun Park; Dongjin Byun

doi:10.1016/j.jcrysgro.2011.01.097

Epitaxial lateral overgrowth of GaN on sapphire substrates using in-situ carbonized photoresist mask

Sang Il Kim, Bumjoon Kim, Samseok Jang, A. Young Kim, Jihun Park, Dongjin Byun

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Epitaxial lateral overgrowth (ELO) GaN samples were successfully grown on masked sapphire (0 0 0 1) substrates using an in-situ carbonized photoresist (PR) mask by a metalorganic chemical vapor deposition (MOCVD) method. The PR masks for the ELO process were prepared using conventional lithography in the form of a stripe with an opening of 4 μm and a period of 16 μm. The stripe-patterned PR was annealed at 1000 °C in a H₂ atmosphere. The stripes were aligned parallel to the [_11-20]Al ^O3direction. The ELO process of GaN was strongly dependent on the direction of the stripes. Overall, the PR masks on the sapphire substrate were carbonized during the heating step before the main growth, so that the carbonized PR mask acted as an ELO mask. The study results confirmed the promising potential of the ELO process using an in-situ carbonized PR mask as a single-step technique.

Original language	English
Pages (from-to)	200-204
Number of pages	5
Journal	Journal of Crystal Growth
Volume	326
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2011.01.097
Publication status	Published - 2011 Jul 1

Keywords

A3. Metalorganic chemical vapor deposition
B1. Gallium compounds
B1. Nitrides
B2. Semiconducting IIIV materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2011.01.097

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title = "Epitaxial lateral overgrowth of GaN on sapphire substrates using in-situ carbonized photoresist mask",

abstract = "Epitaxial lateral overgrowth (ELO) GaN samples were successfully grown on masked sapphire (0 0 0 1) substrates using an in-situ carbonized photoresist (PR) mask by a metalorganic chemical vapor deposition (MOCVD) method. The PR masks for the ELO process were prepared using conventional lithography in the form of a stripe with an opening of 4 μm and a period of 16 μm. The stripe-patterned PR was annealed at 1000 °C in a H2 atmosphere. The stripes were aligned parallel to the [11-20]Al O3direction. The ELO process of GaN was strongly dependent on the direction of the stripes. Overall, the PR masks on the sapphire substrate were carbonized during the heating step before the main growth, so that the carbonized PR mask acted as an ELO mask. The study results confirmed the promising potential of the ELO process using an in-situ carbonized PR mask as a single-step technique.",

keywords = "A3. Metalorganic chemical vapor deposition, B1. Gallium compounds, B1. Nitrides, B2. Semiconducting IIIV materials",

author = "Kim, {Sang Il} and Bumjoon Kim and Samseok Jang and Kim, {A. Young} and Jihun Park and Dongjin Byun",

year = "2011",

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doi = "10.1016/j.jcrysgro.2011.01.097",

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T1 - Epitaxial lateral overgrowth of GaN on sapphire substrates using in-situ carbonized photoresist mask

AU - Kim, Sang Il

AU - Kim, Bumjoon

AU - Jang, Samseok

AU - Kim, A. Young

AU - Park, Jihun

AU - Byun, Dongjin

PY - 2011/7/1

Y1 - 2011/7/1

N2 - Epitaxial lateral overgrowth (ELO) GaN samples were successfully grown on masked sapphire (0 0 0 1) substrates using an in-situ carbonized photoresist (PR) mask by a metalorganic chemical vapor deposition (MOCVD) method. The PR masks for the ELO process were prepared using conventional lithography in the form of a stripe with an opening of 4 μm and a period of 16 μm. The stripe-patterned PR was annealed at 1000 °C in a H2 atmosphere. The stripes were aligned parallel to the [11-20]Al O3direction. The ELO process of GaN was strongly dependent on the direction of the stripes. Overall, the PR masks on the sapphire substrate were carbonized during the heating step before the main growth, so that the carbonized PR mask acted as an ELO mask. The study results confirmed the promising potential of the ELO process using an in-situ carbonized PR mask as a single-step technique.

AB - Epitaxial lateral overgrowth (ELO) GaN samples were successfully grown on masked sapphire (0 0 0 1) substrates using an in-situ carbonized photoresist (PR) mask by a metalorganic chemical vapor deposition (MOCVD) method. The PR masks for the ELO process were prepared using conventional lithography in the form of a stripe with an opening of 4 μm and a period of 16 μm. The stripe-patterned PR was annealed at 1000 °C in a H2 atmosphere. The stripes were aligned parallel to the [11-20]Al O3direction. The ELO process of GaN was strongly dependent on the direction of the stripes. Overall, the PR masks on the sapphire substrate were carbonized during the heating step before the main growth, so that the carbonized PR mask acted as an ELO mask. The study results confirmed the promising potential of the ELO process using an in-situ carbonized PR mask as a single-step technique.

KW - A3. Metalorganic chemical vapor deposition

KW - B1. Gallium compounds

KW - B1. Nitrides

KW - B2. Semiconducting IIIV materials

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Epitaxial lateral overgrowth of GaN on sapphire substrates using in-situ carbonized photoresist mask

Abstract

Keywords

ASJC Scopus subject areas

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