Epitaxial lateral overgrowth of GaN on Si (111) substrates using high-dose, N+ ion implantation

Bumjoon Kim, Kwangtaek Lee, Samseok Jang, Junggeun Jhin, Seungjae Lee, Jonghyeob Baek, Youngmoon Yu, Jaesang Lee, Dongjin Byun

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

An epitaxial, laterally-overgrown (ELOG) GaN layer is deposited on a Si(111) substrate using high-dose, N+ ion implantation. ELOG GaN is deposited on a Si(111) wafer with implantation stripes by metal-organic (MO) CVD. The GaN layer on the N+ ion-implanted region is polycrystalline and acts as a mask for the ELOG process. This is attributed to the growth rate of the polycrystalline GaN being much slower than that of epitaxial GaN. After 120 min, complete coalescence is achieved with a flat surface. Scanning cathodoluminescence (CL) microscopy and high resolution X-ray diffraction (HRXRD) confirm the high optical and crystalline quality of the ELOG GaN layer.

Original languageEnglish
Pages (from-to)80-84
Number of pages5
JournalChemical Vapor Deposition
Volume16
Issue number1-3
DOIs
Publication statusPublished - 2010

Keywords

  • Epitaxial lateral overgrowth
  • Gallium nitride
  • Ion implantation
  • MOCVD

ASJC Scopus subject areas

  • Chemistry(all)
  • Surfaces and Interfaces
  • Process Chemistry and Technology

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