Epitaxial lateral overgrowth of GaN using high-dose N+-ion- implantation

Bumjoon Kim, Kwangtaek Lee, Samseok Jang, Sang Il Kim, Junggeun Jhin, Jaesang Lee, Dongjin Byun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Epitaxial lateral overgrowth (ELO) process has limited use in GaN devices due to the uneasiness of regrowth or the likeliness of contamination from the ELO mask, even though it is a method to reduce the dislocation density in GaN grown on sapphire substrate. Here we introduce a maskless and single-step ELO process using a high-dose N+-ion implantation. We employed a high-dose N+-ion implantation as an ELO mask instead of usual dielectric material such as SixNy or SiO2. The GaN layer was laterally grown over the ion implanted array formed in a stripe pattern of 4-μm-width, resulting in a complete coalescence after 30 min. TEM and photoluminescence analysis confirmed the reduced dislocation density of the ELO grown GaN layer.

Original languageEnglish
Title of host publicationStudent Posters (General) - 216th ECS Meeting
Pages169-174
Number of pages6
Edition33
DOIs
Publication statusPublished - 2010
EventGeneral Student Poster Session - 216th ECS Meeting - Vienna, Austria
Duration: 2009 Oct 42009 Oct 9

Publication series

NameECS Transactions
Number33
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherGeneral Student Poster Session - 216th ECS Meeting
CountryAustria
CityVienna
Period09/10/409/10/9

ASJC Scopus subject areas

  • Engineering(all)

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    Kim, B., Lee, K., Jang, S., Kim, S. I., Jhin, J., Lee, J., & Byun, D. (2010). Epitaxial lateral overgrowth of GaN using high-dose N+-ion- implantation. In Student Posters (General) - 216th ECS Meeting (33 ed., pp. 169-174). (ECS Transactions; Vol. 25, No. 33). https://doi.org/10.1149/1.3334805