Abstract
Epitaxial lateral overgrowth (ELO) process has limited use in GaN devices due to the uneasiness of regrowth or the likeliness of contamination from the ELO mask, even though it is a method to reduce the dislocation density in GaN grown on sapphire substrate. Here we introduce a maskless and single-step ELO process using a high-dose N+-ion implantation. We employed a high-dose N+-ion implantation as an ELO mask instead of usual dielectric material such as SixNy or SiO2. The GaN layer was laterally grown over the ion implanted array formed in a stripe pattern of 4-μm-width, resulting in a complete coalescence after 30 min. TEM and photoluminescence analysis confirmed the reduced dislocation density of the ELO grown GaN layer.
| Original language | English |
|---|---|
| Title of host publication | ECS Transactions |
| Pages | 169-174 |
| Number of pages | 6 |
| Volume | 25 |
| Edition | 33 |
| DOIs | |
| Publication status | Published - 2010 Dec 1 |
| Event | General Student Poster Session - 216th ECS Meeting - Vienna, Austria Duration: 2009 Oct 4 → 2009 Oct 9 |
Other
| Other | General Student Poster Session - 216th ECS Meeting |
|---|---|
| Country | Austria |
| City | Vienna |
| Period | 09/10/4 → 09/10/9 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Epitaxial lateral overgrowth of GaN using high-dose N+-ion- implantation. / Kim, Bumjoon; Lee, Kwangtaek; Jang, Samseok; Kim, Sang Il; Jhin, Junggeun; Lee, Jaesang; Byun, Dong Jin.
ECS Transactions. Vol. 25 33. ed. 2010. p. 169-174.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Epitaxial lateral overgrowth of GaN using high-dose N+-ion- implantation
AU - Kim, Bumjoon
AU - Lee, Kwangtaek
AU - Jang, Samseok
AU - Kim, Sang Il
AU - Jhin, Junggeun
AU - Lee, Jaesang
AU - Byun, Dong Jin
PY - 2010/12/1
Y1 - 2010/12/1
N2 - Epitaxial lateral overgrowth (ELO) process has limited use in GaN devices due to the uneasiness of regrowth or the likeliness of contamination from the ELO mask, even though it is a method to reduce the dislocation density in GaN grown on sapphire substrate. Here we introduce a maskless and single-step ELO process using a high-dose N+-ion implantation. We employed a high-dose N+-ion implantation as an ELO mask instead of usual dielectric material such as SixNy or SiO2. The GaN layer was laterally grown over the ion implanted array formed in a stripe pattern of 4-μm-width, resulting in a complete coalescence after 30 min. TEM and photoluminescence analysis confirmed the reduced dislocation density of the ELO grown GaN layer.
AB - Epitaxial lateral overgrowth (ELO) process has limited use in GaN devices due to the uneasiness of regrowth or the likeliness of contamination from the ELO mask, even though it is a method to reduce the dislocation density in GaN grown on sapphire substrate. Here we introduce a maskless and single-step ELO process using a high-dose N+-ion implantation. We employed a high-dose N+-ion implantation as an ELO mask instead of usual dielectric material such as SixNy or SiO2. The GaN layer was laterally grown over the ion implanted array formed in a stripe pattern of 4-μm-width, resulting in a complete coalescence after 30 min. TEM and photoluminescence analysis confirmed the reduced dislocation density of the ELO grown GaN layer.
UR - http://www.scopus.com/inward/record.url?scp=79952746348&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79952746348&partnerID=8YFLogxK
U2 - 10.1149/1.3334805
DO - 10.1149/1.3334805
M3 - Conference contribution
AN - SCOPUS:79952746348
SN - 9781566778077
VL - 25
SP - 169
EP - 174
BT - ECS Transactions
ER -