@inproceedings{46ff0fe19c4146be9b799fded9cf52c3,
title = "Epitaxial lateral overgrowth of GaN using high-dose N+-ion- implantation",
abstract = "Epitaxial lateral overgrowth (ELO) process has limited use in GaN devices due to the uneasiness of regrowth or the likeliness of contamination from the ELO mask, even though it is a method to reduce the dislocation density in GaN grown on sapphire substrate. Here we introduce a maskless and single-step ELO process using a high-dose N+-ion implantation. We employed a high-dose N+-ion implantation as an ELO mask instead of usual dielectric material such as SixNy or SiO2. The GaN layer was laterally grown over the ion implanted array formed in a stripe pattern of 4-μm-width, resulting in a complete coalescence after 30 min. TEM and photoluminescence analysis confirmed the reduced dislocation density of the ELO grown GaN layer.",
author = "Bumjoon Kim and Kwangtaek Lee and Samseok Jang and Kim, {Sang Il} and Junggeun Jhin and Jaesang Lee and Dongjin Byun",
year = "2009",
doi = "10.1149/1.3334805",
language = "English",
isbn = "9781566778077",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "33",
pages = "169--174",
booktitle = "Student Posters (General) - 216th ECS Meeting",
edition = "33",
}