Epitaxial lateral overgrowth of GaN using high-dose N+-ion- implantation

Bumjoon Kim, Kwangtaek Lee, Samseok Jang, Sang Il Kim, Junggeun Jhin, Jaesang Lee, Dong Jin Byun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)


Epitaxial lateral overgrowth (ELO) process has limited use in GaN devices due to the uneasiness of regrowth or the likeliness of contamination from the ELO mask, even though it is a method to reduce the dislocation density in GaN grown on sapphire substrate. Here we introduce a maskless and single-step ELO process using a high-dose N+-ion implantation. We employed a high-dose N+-ion implantation as an ELO mask instead of usual dielectric material such as SixNy or SiO2. The GaN layer was laterally grown over the ion implanted array formed in a stripe pattern of 4-μm-width, resulting in a complete coalescence after 30 min. TEM and photoluminescence analysis confirmed the reduced dislocation density of the ELO grown GaN layer.

Original languageEnglish
Title of host publicationECS Transactions
Number of pages6
Publication statusPublished - 2010 Dec 1
EventGeneral Student Poster Session - 216th ECS Meeting - Vienna, Austria
Duration: 2009 Oct 42009 Oct 9


OtherGeneral Student Poster Session - 216th ECS Meeting


ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kim, B., Lee, K., Jang, S., Kim, S. I., Jhin, J., Lee, J., & Byun, D. J. (2010). Epitaxial lateral overgrowth of GaN using high-dose N+-ion- implantation. In ECS Transactions (33 ed., Vol. 25, pp. 169-174) https://doi.org/10.1149/1.3334805