Epitaxial structure optimization of nonpolar a-plane GaN light-emitting diodes

Dong Ho Kim, Su Jin Kim, Sung Hun Son, Tae Geun Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this research, the number of quantum well (QW) were optimized to improve the device performance of nonpolar a-plane (11-20) GaN light-emitting diodes (LEDs). Based on a theoretical consideration, we applied four periods of 3.5-nm-thick In0.23Ga0.77N quantum wells and 6-nm-thick GaN quantum barriers in order to reduce the carrier overflow and thereby to increase the radiative recombination rates. As a result, we found that the radiative recombination rate was increased by 29% at 20 mA while the forward voltage and the light output-power were improved by 7.4% and 12.3%, respectively, compared with a single QW nonpolar a-plane GaN LED.

Original languageEnglish
Pages (from-to)1215-1218
Number of pages4
JournalJournal of the Korean Physical Society
Volume60
Issue number8
DOIs
Publication statusPublished - 2012 Dec 1

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light emitting diodes
quantum wells
radiative recombination
optimization
output
electric potential

Keywords

  • Epitaxial structure
  • Gallium-nitride (GaN)
  • Lightemitting diodes (LEDs)
  • Multiple quantum-wells (MQW)
  • Nonpolar

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Epitaxial structure optimization of nonpolar a-plane GaN light-emitting diodes. / Kim, Dong Ho; Kim, Su Jin; Son, Sung Hun; Kim, Tae Geun.

In: Journal of the Korean Physical Society, Vol. 60, No. 8, 01.12.2012, p. 1215-1218.

Research output: Contribution to journalArticle

Kim, Dong Ho ; Kim, Su Jin ; Son, Sung Hun ; Kim, Tae Geun. / Epitaxial structure optimization of nonpolar a-plane GaN light-emitting diodes. In: Journal of the Korean Physical Society. 2012 ; Vol. 60, No. 8. pp. 1215-1218.
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