Epitaxial ZnO/4H-SiC heterojunction diodes

Jae Sang Lee, Ji Hong Kim, Byung-Moo Moon, Wook Bahng, Sang Cheol Kim, Nam Kyun Kim, Sang Mo Koo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

High quality n-ZnO/p-SiC heterojunction diodes have been fabricated and their photoresponse properties have been investigated. X-ray diffraction (XRD) θ-2θ patterns show that highly c-axis oriented ZnO films were epitaxially grown on 4H-SiC. The RMS roughness is observed as low as 2 nm by atomic force microscope (AFM). Current-voltage (I-V) characteristics of the fabricated heterojunction diodes have a good rectifying characteristics, and a leakage current less than 10-9 A at -10 V, with a forward current of ∼10-5 A at +10 V. The responsivity is measured for different UV wavwlengths. As the intensity of UV wavelength is decreased from 365 nm to 254 nm, the photocurrent increased 1.7x10-5 A to 3x10-5 A.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages706-707
Number of pages2
DOIs
Publication statusPublished - 2010 May 5
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 2010 Jan 32010 Jan 8

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period10/1/310/1/8

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Lee, J. S., Kim, J. H., Moon, B-M., Bahng, W., Kim, S. C., Kim, N. K., & Koo, S. M. (2010). Epitaxial ZnO/4H-SiC heterojunction diodes. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 706-707). [5424596] https://doi.org/10.1109/INEC.2010.5424596