Epitaxially grown GaZnO thin films as transparent electrodes for 4H-SiC

Jung Ho Lee, Ji Hong Kim, Min Seok Kang, Byung-Moo Moon, Sang Mo Koo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

As a wide-bandgap material with most matured wafer technologies, SiC is expected to replace conventional semiconductor materials by improving the power rating, switching frequency, high temperature performances, and ultra-violet (UV) detectors. Transparent conductive oxide (TCO) films have received eminent attention due to their potential use for electrodes of optoelectronic devices such as light emitting diode, solar cells, and liquid crystal displays as well as flat panels. So far, most of the studies on TCO have been focused on indium tin oxide (ITO), however, due to high cost of indium and its limited availability, it is required to develop alternative TCO materials with low cost, high conductivity, and high transparency [1]. Group 3 elements such as gallium and aluminum are the suitable materials as dopants to ZnO for the transparent n-type ZnO. Electrodes are one of the important factors for the SiC UV detectors. Also, there have been many Al or Ga doped ZnO related reports which focus on post annealing effect, transparent [2,3].

Original languageEnglish
Title of host publication2011 International Semiconductor Device Research Symposium, ISDRS 2011
DOIs
Publication statusPublished - 2011 Dec 1
Event2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States
Duration: 2011 Dec 72011 Dec 9

Other

Other2011 International Semiconductor Device Research Symposium, ISDRS 2011
CountryUnited States
CityCollege Park, MD
Period11/12/711/12/9

Fingerprint

Ultraviolet detectors
Thin films
Indium
Electrodes
Conductive films
Oxides
Switching frequency
Gallium
Tin oxides
Liquid crystal displays
Optoelectronic devices
Transparency
Oxide films
Light emitting diodes
Costs
Solar cells
Energy gap
Doping (additives)
Availability
Annealing

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Lee, J. H., Kim, J. H., Kang, M. S., Moon, B-M., & Koo, S. M. (2011). Epitaxially grown GaZnO thin films as transparent electrodes for 4H-SiC. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011 [6135236] https://doi.org/10.1109/ISDRS.2011.6135236

Epitaxially grown GaZnO thin films as transparent electrodes for 4H-SiC. / Lee, Jung Ho; Kim, Ji Hong; Kang, Min Seok; Moon, Byung-Moo; Koo, Sang Mo.

2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. 6135236.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, JH, Kim, JH, Kang, MS, Moon, B-M & Koo, SM 2011, Epitaxially grown GaZnO thin films as transparent electrodes for 4H-SiC. in 2011 International Semiconductor Device Research Symposium, ISDRS 2011., 6135236, 2011 International Semiconductor Device Research Symposium, ISDRS 2011, College Park, MD, United States, 11/12/7. https://doi.org/10.1109/ISDRS.2011.6135236
Lee JH, Kim JH, Kang MS, Moon B-M, Koo SM. Epitaxially grown GaZnO thin films as transparent electrodes for 4H-SiC. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. 6135236 https://doi.org/10.1109/ISDRS.2011.6135236
Lee, Jung Ho ; Kim, Ji Hong ; Kang, Min Seok ; Moon, Byung-Moo ; Koo, Sang Mo. / Epitaxially grown GaZnO thin films as transparent electrodes for 4H-SiC. 2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011.
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