Epitaxially grown GaZnO thin films as transparent electrodes for 4H-SiC

As a wide-bandgap material with most matured wafer technologies, SiC is expected to replace conventional semiconductor materials by improving the power rating, switching frequency, high temperature performances, and ultra-violet (UV) detectors. Transparent conductive oxide (TCO) films have received eminent attention due to their potential use for electrodes of optoelectronic devices such as light emitting diode, solar cells, and liquid crystal displays as well as flat panels. So far, most of the studies on TCO have been focused on indium tin oxide (ITO), however, due to high cost of indium and its limited availability, it is required to develop alternative TCO materials with low cost, high conductivity, and high transparency [1]. Group 3 elements such as gallium and aluminum are the suitable materials as dopants to ZnO for the transparent n-type ZnO. Electrodes are one of the important factors for the SiC UV detectors. Also, there have been many Al or Ga doped ZnO related reports which focus on post annealing effect, transparent [2,3].