Abstract
As a wide-bandgap material with most matured wafer technologies, SiC is expected to replace conventional semiconductor materials by improving the power rating, switching frequency, high temperature performances, and ultra-violet (UV) detectors. Transparent conductive oxide (TCO) films have received eminent attention due to their potential use for electrodes of optoelectronic devices such as light emitting diode, solar cells, and liquid crystal displays as well as flat panels. So far, most of the studies on TCO have been focused on indium tin oxide (ITO), however, due to high cost of indium and its limited availability, it is required to develop alternative TCO materials with low cost, high conductivity, and high transparency [1]. Group 3 elements such as gallium and aluminum are the suitable materials as dopants to ZnO for the transparent n-type ZnO. Electrodes are one of the important factors for the SiC UV detectors. Also, there have been many Al or Ga doped ZnO related reports which focus on post annealing effect, transparent [2,3].
| Original language | English |
|---|---|
| Title of host publication | 2011 International Semiconductor Device Research Symposium, ISDRS 2011 |
| DOIs | |
| Publication status | Published - 2011 Dec 1 |
| Event | 2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States Duration: 2011 Dec 7 → 2011 Dec 9 |
Other
| Other | 2011 International Semiconductor Device Research Symposium, ISDRS 2011 |
|---|---|
| Country | United States |
| City | College Park, MD |
| Period | 11/12/7 → 11/12/9 |
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ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering
Cite this
Epitaxially grown GaZnO thin films as transparent electrodes for 4H-SiC. / Lee, Jung Ho; Kim, Ji Hong; Kang, Min Seok; Moon, Byung-Moo; Koo, Sang Mo.
2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. 6135236.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Epitaxially grown GaZnO thin films as transparent electrodes for 4H-SiC
AU - Lee, Jung Ho
AU - Kim, Ji Hong
AU - Kang, Min Seok
AU - Moon, Byung-Moo
AU - Koo, Sang Mo
PY - 2011/12/1
Y1 - 2011/12/1
N2 - As a wide-bandgap material with most matured wafer technologies, SiC is expected to replace conventional semiconductor materials by improving the power rating, switching frequency, high temperature performances, and ultra-violet (UV) detectors. Transparent conductive oxide (TCO) films have received eminent attention due to their potential use for electrodes of optoelectronic devices such as light emitting diode, solar cells, and liquid crystal displays as well as flat panels. So far, most of the studies on TCO have been focused on indium tin oxide (ITO), however, due to high cost of indium and its limited availability, it is required to develop alternative TCO materials with low cost, high conductivity, and high transparency [1]. Group 3 elements such as gallium and aluminum are the suitable materials as dopants to ZnO for the transparent n-type ZnO. Electrodes are one of the important factors for the SiC UV detectors. Also, there have been many Al or Ga doped ZnO related reports which focus on post annealing effect, transparent [2,3].
AB - As a wide-bandgap material with most matured wafer technologies, SiC is expected to replace conventional semiconductor materials by improving the power rating, switching frequency, high temperature performances, and ultra-violet (UV) detectors. Transparent conductive oxide (TCO) films have received eminent attention due to their potential use for electrodes of optoelectronic devices such as light emitting diode, solar cells, and liquid crystal displays as well as flat panels. So far, most of the studies on TCO have been focused on indium tin oxide (ITO), however, due to high cost of indium and its limited availability, it is required to develop alternative TCO materials with low cost, high conductivity, and high transparency [1]. Group 3 elements such as gallium and aluminum are the suitable materials as dopants to ZnO for the transparent n-type ZnO. Electrodes are one of the important factors for the SiC UV detectors. Also, there have been many Al or Ga doped ZnO related reports which focus on post annealing effect, transparent [2,3].
UR - http://www.scopus.com/inward/record.url?scp=84863148291&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84863148291&partnerID=8YFLogxK
U2 - 10.1109/ISDRS.2011.6135236
DO - 10.1109/ISDRS.2011.6135236
M3 - Conference contribution
SN - 9781457717550
BT - 2011 International Semiconductor Device Research Symposium, ISDRS 2011
ER -