Erasable nanometer-scale modification at the Au/Si interface by ballistic electron emission microscopy

Y. Hasegawa, K. Akiyama, M. Ono, S. J. Kahng, Q. K. Xue, K. Nakayama, T. Hashizume, T. Sakurai

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We report that local modification and its erasing with a nanometer-scale size can be performed at a Au/Si(111) interface using ballistic electron emission microscopy (BEEM). By applying a negative voltage on the tip, a region was created where no BEEM current flows at the interface and was imaged with BEEM. The modified area can be erased by applying a voltage with the opposite polarity. It is found that the minimum size of writing and erasing corresponds to Au grains, suggesting a method of rewritable memory on a nanometer-scale dimension.

Original languageEnglish
Pages (from-to)3668-3670
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number23
DOIs
Publication statusPublished - 1999 Dec 6
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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  • Cite this

    Hasegawa, Y., Akiyama, K., Ono, M., Kahng, S. J., Xue, Q. K., Nakayama, K., Hashizume, T., & Sakurai, T. (1999). Erasable nanometer-scale modification at the Au/Si interface by ballistic electron emission microscopy. Applied Physics Letters, 75(23), 3668-3670. https://doi.org/10.1063/1.125423