We report that local modification and its erasing with a nanometer-scale size can be performed at a Au/Si(111) interface using ballistic electron emission microscopy (BEEM). By applying a negative voltage on the tip, a region was created where no BEEM current flows at the interface and was imaged with BEEM. The modified area can be erased by applying a voltage with the opposite polarity. It is found that the minimum size of writing and erasing corresponds to Au grains, suggesting a method of rewritable memory on a nanometer-scale dimension.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 1999 Dec 6|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)