Erasable nanometer-scale modification at the Au/Si interface by ballistic electron emission microscopy

Y. Hasegawa; K. Akiyama; M. Ono; S. J. Kahng; Q. K. Xue; K. Nakayama; T. Hashizume; T. Sakurai

doi:10.1063/1.125423

Erasable nanometer-scale modification at the Au/Si interface by ballistic electron emission microscopy

Y. Hasegawa, K. Akiyama, M. Ono, S. J. Kahng, Q. K. Xue, K. Nakayama, T. Hashizume, T. Sakurai

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We report that local modification and its erasing with a nanometer-scale size can be performed at a Au/Si(111) interface using ballistic electron emission microscopy (BEEM). By applying a negative voltage on the tip, a region was created where no BEEM current flows at the interface and was imaged with BEEM. The modified area can be erased by applying a voltage with the opposite polarity. It is found that the minimum size of writing and erasing corresponds to Au grains, suggesting a method of rewritable memory on a nanometer-scale dimension.

Original language	English
Pages (from-to)	3668-3670
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	23
DOIs	https://doi.org/10.1063/1.125423
Publication status	Published - 1999 Dec 6
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.125423

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title = "Erasable nanometer-scale modification at the Au/Si interface by ballistic electron emission microscopy",

abstract = "We report that local modification and its erasing with a nanometer-scale size can be performed at a Au/Si(111) interface using ballistic electron emission microscopy (BEEM). By applying a negative voltage on the tip, a region was created where no BEEM current flows at the interface and was imaged with BEEM. The modified area can be erased by applying a voltage with the opposite polarity. It is found that the minimum size of writing and erasing corresponds to Au grains, suggesting a method of rewritable memory on a nanometer-scale dimension.",

author = "Y. Hasegawa and K. Akiyama and M. Ono and Kahng, {S. J.} and Xue, {Q. K.} and K. Nakayama and T. Hashizume and T. Sakurai",

year = "1999",

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doi = "10.1063/1.125423",

language = "English",

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T1 - Erasable nanometer-scale modification at the Au/Si interface by ballistic electron emission microscopy

AU - Hasegawa, Y.

AU - Akiyama, K.

AU - Ono, M.

AU - Kahng, S. J.

AU - Xue, Q. K.

AU - Nakayama, K.

AU - Hashizume, T.

AU - Sakurai, T.

PY - 1999/12/6

Y1 - 1999/12/6

N2 - We report that local modification and its erasing with a nanometer-scale size can be performed at a Au/Si(111) interface using ballistic electron emission microscopy (BEEM). By applying a negative voltage on the tip, a region was created where no BEEM current flows at the interface and was imaged with BEEM. The modified area can be erased by applying a voltage with the opposite polarity. It is found that the minimum size of writing and erasing corresponds to Au grains, suggesting a method of rewritable memory on a nanometer-scale dimension.

AB - We report that local modification and its erasing with a nanometer-scale size can be performed at a Au/Si(111) interface using ballistic electron emission microscopy (BEEM). By applying a negative voltage on the tip, a region was created where no BEEM current flows at the interface and was imaged with BEEM. The modified area can be erased by applying a voltage with the opposite polarity. It is found that the minimum size of writing and erasing corresponds to Au grains, suggesting a method of rewritable memory on a nanometer-scale dimension.

UR - http://www.scopus.com/inward/record.url?scp=0000085964&partnerID=8YFLogxK

U2 - 10.1063/1.125423

DO - 10.1063/1.125423

M3 - Article

AN - SCOPUS:0000085964

SN - 0003-6951

VL - 75

SP - 3668

EP - 3670

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Erasable nanometer-scale modification at the Au/Si interface by ballistic electron emission microscopy

Abstract

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