Erratum

A latch-up immunized lateral trench insulated gate bipolar transistor with a p+ diverter structure for smart power integrated circuit (Japanese Journal of Applied Physics (2001) 40 (5267))

Ey Goo Kang, Seung Hyun Moon, Man Young Sung

Research output: Contribution to journalArticle

Original languageEnglish
Article number079203
JournalJapanese Journal of Applied Physics
Volume51
Issue number7 PART 1
DOIs
Publication statusPublished - 2012 Jul 1

Fingerprint

Power integrated circuits
latch-up
Insulated gate bipolar transistors (IGBT)
bipolar transistors
integrated circuits
Physics
physics

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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author = "Kang, {Ey Goo} and Moon, {Seung Hyun} and Sung, {Man Young}",
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