Erratum: A latch-up immunized lateral trench insulated gate bipolar transistor with a p+ diverter structure for smart power integrated circuit (Japanese Journal of Applied Physics (2001) 40 (5267))

Ey Goo Kang; Seung Hyun Moon; Man Young Sung

doi:10.1143/JJAP.51.079203

Erratum: A latch-up immunized lateral trench insulated gate bipolar transistor with a p+ diverter structure for smart power integrated circuit (Japanese Journal of Applied Physics (2001) 40 (5267))

Ey Goo Kang, Seung Hyun Moon, Man Young Sung

* Honorary professors

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Article number	079203
Journal	Japanese journal of applied physics
Volume	51
Issue number	7 PART 1
DOIs	https://doi.org/10.1143/JJAP.51.079203
Publication status	Published - 2012 Jul

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.51.079203

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Erratum : A latch-up immunized lateral trench insulated gate bipolar transistor with a p+ diverter structure for smart power integrated circuit (Japanese Journal of Applied Physics (2001) 40 (5267)). / Kang, Ey Goo; Moon, Seung Hyun; Sung, Man Young.

In: Japanese journal of applied physics, Vol. 51, No. 7 PART 1, 079203, 07.2012.

Research output: Contribution to journal › Comment/debate › peer-review

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Erratum: A latch-up immunized lateral trench insulated gate bipolar transistor with a p+ diverter structure for smart power integrated circuit (Japanese Journal of Applied Physics (2001) 40 (5267))

ASJC Scopus subject areas

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