Erratum

A new lateral trench electrode insulated gate bipolar transistor with p+ diverter for superior electrical characteristics (Japanese Journal of Applied Physics (2003) 42 (2119))

Man Young Sung, Ey Goo Kang, Dae Jong Kim, Sangsig Kim

Research output: Contribution to journalArticle

Original languageEnglish
Article number079204
JournalJapanese Journal of Applied Physics
Volume51
Issue number7 PART 1
DOIs
Publication statusPublished - 2012 Jul 1

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Insulated gate bipolar transistors (IGBT)
bipolar transistors
Physics
Electrodes
physics
electrodes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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