Erratum: A small-sized lateral trench electrode insulated gate bipolar transistor for improving latch-up and breakdown characteristics (Japanese Journal of Applied Physics (2001) 40 (5262))

Ey Goo Kang, Seung Hyun Moon, Man Young Sung

Research output: Contribution to journalArticle

Original languageEnglish
Article number079202
JournalJapanese Journal of Applied Physics
Volume51
Issue number7 PART 1
DOIs
Publication statusPublished - 2012 Jul 1

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latch-up
Insulated gate bipolar transistors (IGBT)
bipolar transistors
Physics
breakdown
Electrodes
physics
electrodes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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