Erratum: A small-sized lateral trench electrode insulated gate bipolar transistor for improving latch-up and breakdown characteristics (Japanese Journal of Applied Physics (2001) 40 (5262))

Ey Goo Kang, Seung Hyun Moon, Man Young Sung

Research output: Contribution to journal › Comment/debate › peer-review

Fingerprint

Dive into the research topics of 'Erratum: A small-sized lateral trench electrode insulated gate bipolar transistor for improving latch-up and breakdown characteristics (Japanese Journal of Applied Physics (2001) 40 (5262))'. Together they form a unique fingerprint.