Erratum

Electrical characteristics of Ti/Al Ohmic contacts to molecular beam epitaxy-grown N-polar n-type GaN for vertical-structure light-emitting Diodes (Journal of Electronic Materials DOI: 10.1007/s11664-012-2136-0)

Joon Woo Jeon, Tae Yeon Seong, Gon Namkoong

Research output: Contribution to journalArticle

Original languageEnglish
JournalJournal of Electronic Materials
Volume41
Issue number8
DOIs
Publication statusPublished - 2012 Aug 1

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Ohmic contacts
Molecular beam epitaxy
Light emitting diodes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

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title = "Erratum: Electrical characteristics of Ti/Al Ohmic contacts to molecular beam epitaxy-grown N-polar n-type GaN for vertical-structure light-emitting Diodes (Journal of Electronic Materials DOI: 10.1007/s11664-012-2136-0)",
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