Erratum

Formation mechanism of cerium oxide-doped indium oxide/Ag ohmic contacts on p-type GaN (Applied Physics Letters (2006) 89 (262115))

Dong Seok Leem, Tae Wook Kim, Takhee Lee, Ja Soon Jang, Young W. Ok, Tae Yeon Seong

Research output: Contribution to journalArticle

1 Citation (Scopus)
Original languageEnglish
Article number079901
JournalApplied Physics Letters
Volume90
Issue number7
DOIs
Publication statusPublished - 2007 Feb 26

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cerium oxides
indium oxides
electric contacts
physics

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Erratum : Formation mechanism of cerium oxide-doped indium oxide/Ag ohmic contacts on p-type GaN (Applied Physics Letters (2006) 89 (262115)). / Leem, Dong Seok; Kim, Tae Wook; Lee, Takhee; Jang, Ja Soon; Ok, Young W.; Seong, Tae Yeon.

In: Applied Physics Letters, Vol. 90, No. 7, 079901, 26.02.2007.

Research output: Contribution to journalArticle

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year = "2007",
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