Erratum: Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes (Applied Physics Letters (2009) 94 (212108))

Yu Lin Wang, F. Ren, Yu Zhang, Q. Sun, C. D. Yerino, T. S. Ko, Y. S. Cho, I. H. Lee, J. Han, S. J. Pearton

Research output: Contribution to journalComment/debate

Original languageEnglish
Article number019903
JournalApplied Physics Letters
Volume95
Issue number1
DOIs
Publication statusPublished - 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Wang, Y. L., Ren, F., Zhang, Y., Sun, Q., Yerino, C. D., Ko, T. S., Cho, Y. S., Lee, I. H., Han, J., & Pearton, S. J. (2009). Erratum: Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes (Applied Physics Letters (2009) 94 (212108)). Applied Physics Letters, 95(1), [019903]. https://doi.org/10.1063/1.3168656