Erratum: Metal-organic chemical vapor deposition growth of InGaN/GaN high power green light emitting diode: Effects of InGaN well protection and electron reservoir layer (Journal of Applied Physics (2007) 102 (053519))

Jin Woo Ju; Eun Sil Kang; Hwa Soo Kim; Lee Woon Jang; Haeng Keun Ahn; Ju Won Jeon; In Hwan Lee; Jong Hyeob Baek

doi:10.1063/1.2822239

Erratum: Metal-organic chemical vapor deposition growth of InGaN/GaN high power green light emitting diode: Effects of InGaN well protection and electron reservoir layer (Journal of Applied Physics (2007) 102 (053519))

Jin Woo Ju, Eun Sil Kang, Hwa Soo Kim, Lee Woon Jang, Haeng Keun Ahn, Ju Won Jeon, In Hwan Lee, Jong Hyeob Baek

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Article number	119901
Journal	Journal of Applied Physics
Volume	102
Issue number	11
DOIs	https://doi.org/10.1063/1.2822239
Publication status	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.2822239

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Ju, J. W., Kang, E. S., Kim, H. S., Jang, L. W., Ahn, H. K., Jeon, J. W., Lee, I. H., & Baek, J. H. (2007). Erratum: Metal-organic chemical vapor deposition growth of InGaN/GaN high power green light emitting diode: Effects of InGaN well protection and electron reservoir layer (Journal of Applied Physics (2007) 102 (053519)). Journal of Applied Physics, 102(11), [119901]. https://doi.org/10.1063/1.2822239

Erratum : Metal-organic chemical vapor deposition growth of InGaN/GaN high power green light emitting diode: Effects of InGaN well protection and electron reservoir layer (Journal of Applied Physics (2007) 102 (053519)). / Ju, Jin Woo; Kang, Eun Sil; Kim, Hwa Soo et al.

In: Journal of Applied Physics, Vol. 102, No. 11, 119901, 2007.

Research output: Contribution to journal › Comment/debate › peer-review

Ju, JW, Kang, ES, Kim, HS, Jang, LW, Ahn, HK, Jeon, JW, Lee, IH & Baek, JH 2007, 'Erratum: Metal-organic chemical vapor deposition growth of InGaN/GaN high power green light emitting diode: Effects of InGaN well protection and electron reservoir layer (Journal of Applied Physics (2007) 102 (053519))', Journal of Applied Physics, vol. 102, no. 11, 119901. https://doi.org/10.1063/1.2822239

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author = "Ju, {Jin Woo} and Kang, {Eun Sil} and Kim, {Hwa Soo} and Jang, {Lee Woon} and Ahn, {Haeng Keun} and Jeon, {Ju Won} and Lee, {In Hwan} and Baek, {Jong Hyeob}",

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AU - Kang, Eun Sil

AU - Kim, Hwa Soo

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Erratum: Metal-organic chemical vapor deposition growth of InGaN/GaN high power green light emitting diode: Effects of InGaN well protection and electron reservoir layer (Journal of Applied Physics (2007) 102 (053519))

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