Erratum: Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206))

Chien Fong Lo, Lu Liu, Fan Ren, Stephen J. Pearton, Brent P. Gila, Hong Yeol Kim, Ji Hyun Kim, Oleg Laboutin, Yu Cao, Jerry W. Johnson, Ivan I. Kravchenko

Research output: Contribution to journalArticle

Original languageEnglish
Article number043401
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume30
Issue number4
DOIs
Publication statusPublished - 2012 Jul 1

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Proton irradiation
High electron mobility transistors
Microelectronics
Vacuum

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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Erratum : Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206)). / Lo, Chien Fong; Liu, Lu; Ren, Fan; Pearton, Stephen J.; Gila, Brent P.; Kim, Hong Yeol; Kim, Ji Hyun; Laboutin, Oleg; Cao, Yu; Johnson, Jerry W.; Kravchenko, Ivan I.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 30, No. 4, 043401, 01.07.2012.

Research output: Contribution to journalArticle

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AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Gila, Brent P.

AU - Kim, Hong Yeol

AU - Kim, Ji Hyun

AU - Laboutin, Oleg

AU - Cao, Yu

AU - Johnson, Jerry W.

AU - Kravchenko, Ivan I.

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