Erratum: Publisher's note: "bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices" (Applied Physics Letters (2015) 106:203101)

Myung Ju Kim, Dong Su Jeon, Ju Hyun Park, Tae Geun Kim

Research output: Contribution to journalComment/debate

Original languageEnglish
Article number049902
JournalApplied Physics Letters
Volume108
Issue number4
DOIs
Publication statusPublished - 2016 Jan 25

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tantalum nitrides
random access memory
physics

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Erratum : Publisher's note: "bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices" (Applied Physics Letters (2015) 106:203101). / Kim, Myung Ju; Jeon, Dong Su; Park, Ju Hyun; Kim, Tae Geun.

In: Applied Physics Letters, Vol. 108, No. 4, 049902, 25.01.2016.

Research output: Contribution to journalComment/debate

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