Erratum: Quantitative extraction of temperature-dependent barrier height and channel resistance of a-SIZO/OMO and a-SIZO/IZO thin-film transistors (IEEE Electron Device Letters (2013) 34: 2 (247-249) )

K. Heo, B. H. Hong, E. H. Lee, S. Y. Lee, S. Kim, S. W. Hwang

Research output: Contribution to journalComment/debate

Original languageEnglish
Article number6634212
Number of pages1
JournalIEEE Electron Device Letters
Volume34
Issue number11
DOIs
Publication statusPublished - 2013 Nov 13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this