Erratum: Quantitative extraction of temperature-dependent barrier height and channel resistance of a-SIZO/OMO and a-SIZO/IZO thin-film transistors (IEEE Electron Device Letters (2013) 34: 2 (247-249) )

K. Heo, B. H. Hong, E. H. Lee, S. Y. Lee, Sangsig Kim, S. W. Hwang

Research output: Contribution to journalArticle

Original languageEnglish
Article number6634212
JournalIEEE Electron Device Letters
Volume34
Issue number11
DOIs
Publication statusPublished - 2013 Nov 13

Fingerprint

Electron devices
Thin film transistors
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

@article{a0af664a5d054386bbcb5003ab6fc552,
title = "Erratum: Quantitative extraction of temperature-dependent barrier height and channel resistance of a-SIZO/OMO and a-SIZO/IZO thin-film transistors (IEEE Electron Device Letters (2013) 34: 2 (247-249) )",
author = "K. Heo and Hong, {B. H.} and Lee, {E. H.} and Lee, {S. Y.} and Sangsig Kim and Hwang, {S. W.}",
year = "2013",
month = "11",
day = "13",
doi = "10.1109/LED.2013.2285072",
language = "English",
volume = "34",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",

}

TY - JOUR

T1 - Erratum

T2 - Quantitative extraction of temperature-dependent barrier height and channel resistance of a-SIZO/OMO and a-SIZO/IZO thin-film transistors (IEEE Electron Device Letters (2013) 34: 2 (247-249) )

AU - Heo, K.

AU - Hong, B. H.

AU - Lee, E. H.

AU - Lee, S. Y.

AU - Kim, Sangsig

AU - Hwang, S. W.

PY - 2013/11/13

Y1 - 2013/11/13

UR - http://www.scopus.com/inward/record.url?scp=84887220656&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84887220656&partnerID=8YFLogxK

U2 - 10.1109/LED.2013.2285072

DO - 10.1109/LED.2013.2285072

M3 - Article

AN - SCOPUS:84887220656

VL - 34

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 11

M1 - 6634212

ER -