Er3+ photoluminescence from Er-doped amorphous SiOx films prepared by pulsed laser deposition at room temperature: The effects of oxygen concentration

Jeong Sook Ha, Chang Hyun Bae, Sang Hwan Nam, Seung Min Park, Young Rae Jang, Keon Ho Yoo, Kyoungwan Park

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

The fabrication of Er-doped amorphous SiOx films by laser ablation of a Si:Er2O3 target in He atmosphere was discussed. A time-of-flight quadrupole mass spectroscopy was adopted to obtain kinetic energies of ionic species in a plume produced by laser ablation. It was found that the photoluminscence intensity at 1.54 μm was highly dependent on the oxygen content in the film.

Original languageEnglish
Pages (from-to)3436-3438
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number20
DOIs
Publication statusPublished - 2003 May 19

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laser ablation
pulsed laser deposition
photoluminescence
room temperature
oxygen
plumes
mass spectroscopy
quadrupoles
kinetic energy
atmospheres
fabrication

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Er3+ photoluminescence from Er-doped amorphous SiOx films prepared by pulsed laser deposition at room temperature : The effects of oxygen concentration. / Ha, Jeong Sook; Bae, Chang Hyun; Nam, Sang Hwan; Park, Seung Min; Jang, Young Rae; Yoo, Keon Ho; Park, Kyoungwan.

In: Applied Physics Letters, Vol. 82, No. 20, 19.05.2003, p. 3436-3438.

Research output: Contribution to journalArticle

Ha, Jeong Sook ; Bae, Chang Hyun ; Nam, Sang Hwan ; Park, Seung Min ; Jang, Young Rae ; Yoo, Keon Ho ; Park, Kyoungwan. / Er3+ photoluminescence from Er-doped amorphous SiOx films prepared by pulsed laser deposition at room temperature : The effects of oxygen concentration. In: Applied Physics Letters. 2003 ; Vol. 82, No. 20. pp. 3436-3438.
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