Er3+ photoluminescence from Er-doped silicon-rich silicon oxide films deposited by laser ablation of a Si: Er target in an oxygen atmosphere

Jeong Sook Ha, Young Rae Jang, Keon Ho Yoo, Chang Hyun Bae, Sang Hwan Nam, Ji Seon Jeon, Seung Min Park

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We have developed a new pulsed laser deposition method for fabricating Er-doped silicon-rich silicon oxide (SRSO:Er) films. A target composed of a pure Si disk and an Er metal strip was ablated by a line-focused laser beam in oxygen atmosphere. The oxygen concentration that determines the relative concentrations of the three phases (Si-Si, SiOx, and SiO2) in the film was easily controlled by varying the ambient oxygen pressure. The photoluminescence intensity at 1.54 μm from Er3+ ions was strongly dependent on the amount of the Si-Si phase in the SRSO:Er films.

Original languageEnglish
Pages (from-to)1541-1544
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4 A
Publication statusPublished - 2004 Apr 1



  • 1.54μm photoluminescence
  • Er-doped silicon
  • Pulsed laser deposition

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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