Estimation of interfacial fixed charge at al2o 3/sio2 using slant-Etched wafer for solar cell application

Youngkyoung Ahn; Sakeb Hasan Choudhury; Daeseok Lee; Sharif Md. Sadaf; Manzar Siddik; Minseok Jo; Sungeun Park; Young Do Kim; Dong Hwan Kim; Hyunsang Hwang

doi:10.1143/JJAP.50.071503

Estimation of interfacial fixed charge at al₂o ₃/sio₂ using slant-Etched wafer for solar cell application

Youngkyoung Ahn, Sakeb Hasan Choudhury, Daeseok Lee, Sharif Md. Sadaf, Manzar Siddik, Minseok Jo, Sungeun Park, Young Do Kim, Dong Hwan Kim, Hyunsang Hwang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

7 Citations (Scopus)

Abstract

Al₂O₃ with a negative fixed charge prepared by atomic layer deposition has been reported to improve surface passivation properties for Si-solar cell applications. The high negative fixed charge at the SiO2/Al2O3 interface facilitates a low surface recombination velocity and a high effective lifetime, which result in greater performance. In this study, we adopted an effective method using a slant-etched sample with various thicknesses of SiO₂ to estimate the charge densities of both the bulk and interface of Al2O3 deposited by atomic layer deposition. We found a direct correlation between lifetime and total charge density in Al₂O₃, which are strong functions of film thickness and annealing condition.

Original language	English
Article number	071503
Journal	Japanese journal of applied physics
Volume	50
Issue number	7 PART 1
DOIs	https://doi.org/10.1143/JJAP.50.071503
Publication status	Published - 2011 Jul 1

Fingerprint

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Cite this

Ahn, Y., Choudhury, S. H., Lee, D., Md. Sadaf, S., Siddik, M., Jo, M., Park, S., Kim, Y. D., Kim, D. H., & Hwang, H. (2011). Estimation of interfacial fixed charge at al₂o ₃/sio₂ using slant-Etched wafer for solar cell application. Japanese journal of applied physics, 50(7 PART 1), [071503]. https://doi.org/10.1143/JJAP.50.071503

Estimation of interfacial fixed charge at al₂o ₃/sio₂ using slant-Etched wafer for solar cell application. / Ahn, Youngkyoung; Choudhury, Sakeb Hasan; Lee, Daeseok; Md. Sadaf, Sharif; Siddik, Manzar; Jo, Minseok; Park, Sungeun; Kim, Young Do; Kim, Dong Hwan; Hwang, Hyunsang.

In: Japanese journal of applied physics, Vol. 50, No. 7 PART 1, 071503, 01.07.2011.

Research output: Contribution to journal › Article

@article{12c560530d31408d9d2850017c88e0f0,

title = "Estimation of interfacial fixed charge at al2o 3/sio2 using slant-Etched wafer for solar cell application",

abstract = "Al2O3 with a negative fixed charge prepared by atomic layer deposition has been reported to improve surface passivation properties for Si-solar cell applications. The high negative fixed charge at the SiO2/Al2O3 interface facilitates a low surface recombination velocity and a high effective lifetime, which result in greater performance. In this study, we adopted an effective method using a slant-etched sample with various thicknesses of SiO2 to estimate the charge densities of both the bulk and interface of Al2O3 deposited by atomic layer deposition. We found a direct correlation between lifetime and total charge density in Al2O3, which are strong functions of film thickness and annealing condition.",

author = "Youngkyoung Ahn and Choudhury, {Sakeb Hasan} and Daeseok Lee and {Md. Sadaf}, Sharif and Manzar Siddik and Minseok Jo and Sungeun Park and Kim, {Young Do} and Kim, {Dong Hwan} and Hyunsang Hwang",

year = "2011",

month = jul

day = "1",

doi = "10.1143/JJAP.50.071503",

language = "English",

volume = "50",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "7 PART 1",

}

TY - JOUR

T1 - Estimation of interfacial fixed charge at al2o 3/sio2 using slant-Etched wafer for solar cell application

AU - Ahn, Youngkyoung

AU - Choudhury, Sakeb Hasan

AU - Lee, Daeseok

AU - Md. Sadaf, Sharif

AU - Siddik, Manzar

AU - Jo, Minseok

AU - Park, Sungeun

AU - Kim, Young Do

AU - Kim, Dong Hwan

AU - Hwang, Hyunsang

PY - 2011/7/1

Y1 - 2011/7/1

N2 - Al2O3 with a negative fixed charge prepared by atomic layer deposition has been reported to improve surface passivation properties for Si-solar cell applications. The high negative fixed charge at the SiO2/Al2O3 interface facilitates a low surface recombination velocity and a high effective lifetime, which result in greater performance. In this study, we adopted an effective method using a slant-etched sample with various thicknesses of SiO2 to estimate the charge densities of both the bulk and interface of Al2O3 deposited by atomic layer deposition. We found a direct correlation between lifetime and total charge density in Al2O3, which are strong functions of film thickness and annealing condition.

AB - Al2O3 with a negative fixed charge prepared by atomic layer deposition has been reported to improve surface passivation properties for Si-solar cell applications. The high negative fixed charge at the SiO2/Al2O3 interface facilitates a low surface recombination velocity and a high effective lifetime, which result in greater performance. In this study, we adopted an effective method using a slant-etched sample with various thicknesses of SiO2 to estimate the charge densities of both the bulk and interface of Al2O3 deposited by atomic layer deposition. We found a direct correlation between lifetime and total charge density in Al2O3, which are strong functions of film thickness and annealing condition.

UR - http://www.scopus.com/inward/record.url?scp=79960696282&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79960696282&partnerID=8YFLogxK

U2 - 10.1143/JJAP.50.071503

DO - 10.1143/JJAP.50.071503

M3 - Article

AN - SCOPUS:79960696282

VL - 50

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 7 PART 1

M1 - 071503

ER -

Access to Document

10.1143/JJAP.50.071503