Estimation of interfacial fixed charge at al2o 3/sio2 using slant-Etched wafer for solar cell application

Youngkyoung Ahn, Sakeb Hasan Choudhury, Daeseok Lee, Sharif Md. Sadaf, Manzar Siddik, Minseok Jo, Sungeun Park, Young Do Kim, Dong Hwan Kim, Hyunsang Hwang

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Abstract

Al2O3 with a negative fixed charge prepared by atomic layer deposition has been reported to improve surface passivation properties for Si-solar cell applications. The high negative fixed charge at the SiO2/Al2O3 interface facilitates a low surface recombination velocity and a high effective lifetime, which result in greater performance. In this study, we adopted an effective method using a slant-etched sample with various thicknesses of SiO2 to estimate the charge densities of both the bulk and interface of Al2O3 deposited by atomic layer deposition. We found a direct correlation between lifetime and total charge density in Al2O3, which are strong functions of film thickness and annealing condition.

Original languageEnglish
Article number071503
JournalJapanese journal of applied physics
Volume50
Issue number7 PART 1
DOIs
Publication statusPublished - 2011 Jul 1

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Ahn, Y., Choudhury, S. H., Lee, D., Md. Sadaf, S., Siddik, M., Jo, M., Park, S., Kim, Y. D., Kim, D. H., & Hwang, H. (2011). Estimation of interfacial fixed charge at al2o 3/sio2 using slant-Etched wafer for solar cell application. Japanese journal of applied physics, 50(7 PART 1), [071503]. https://doi.org/10.1143/JJAP.50.071503