Abstract
Al2O3 with a negative fixed charge prepared by atomic layer deposition has been reported to improve surface passivation properties for Si-solar cell applications. The high negative fixed charge at the SiO2/Al2O3 interface facilitates a low surface recombination velocity and a high effective lifetime, which result in greater performance. In this study, we adopted an effective method using a slant-etched sample with various thicknesses of SiO2 to estimate the charge densities of both the bulk and interface of Al2O3 deposited by atomic layer deposition. We found a direct correlation between lifetime and total charge density in Al2O3, which are strong functions of film thickness and annealing condition.
| Original language | English |
|---|---|
| Article number | 071503 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 50 |
| Issue number | 7 PART 1 |
| DOIs | |
| Publication status | Published - 2011 Jul 1 |
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ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Estimation of interfacial fixed charge at al2o 3/sio2 using slant-Etched wafer for solar cell application. / Ahn, Youngkyoung; Choudhury, Sakeb Hasan; Lee, Daeseok; Md. Sadaf, Sharif; Siddik, Manzar; Jo, Minseok; Park, Sungeun; Kim, Young Do; Kim, Donghwan; Hwang, Hyunsang.
In: Japanese Journal of Applied Physics, Vol. 50, No. 7 PART 1, 071503, 01.07.2011.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Estimation of interfacial fixed charge at al2o 3/sio2 using slant-Etched wafer for solar cell application
AU - Ahn, Youngkyoung
AU - Choudhury, Sakeb Hasan
AU - Lee, Daeseok
AU - Md. Sadaf, Sharif
AU - Siddik, Manzar
AU - Jo, Minseok
AU - Park, Sungeun
AU - Kim, Young Do
AU - Kim, Donghwan
AU - Hwang, Hyunsang
PY - 2011/7/1
Y1 - 2011/7/1
N2 - Al2O3 with a negative fixed charge prepared by atomic layer deposition has been reported to improve surface passivation properties for Si-solar cell applications. The high negative fixed charge at the SiO2/Al2O3 interface facilitates a low surface recombination velocity and a high effective lifetime, which result in greater performance. In this study, we adopted an effective method using a slant-etched sample with various thicknesses of SiO2 to estimate the charge densities of both the bulk and interface of Al2O3 deposited by atomic layer deposition. We found a direct correlation between lifetime and total charge density in Al2O3, which are strong functions of film thickness and annealing condition.
AB - Al2O3 with a negative fixed charge prepared by atomic layer deposition has been reported to improve surface passivation properties for Si-solar cell applications. The high negative fixed charge at the SiO2/Al2O3 interface facilitates a low surface recombination velocity and a high effective lifetime, which result in greater performance. In this study, we adopted an effective method using a slant-etched sample with various thicknesses of SiO2 to estimate the charge densities of both the bulk and interface of Al2O3 deposited by atomic layer deposition. We found a direct correlation between lifetime and total charge density in Al2O3, which are strong functions of film thickness and annealing condition.
UR - http://www.scopus.com/inward/record.url?scp=79960696282&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79960696282&partnerID=8YFLogxK
U2 - 10.1143/JJAP.50.071503
DO - 10.1143/JJAP.50.071503
M3 - Article
AN - SCOPUS:79960696282
VL - 50
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 7 PART 1
M1 - 071503
ER -