Etch pit investigation of free electron concentration controlled 4H-SiC

Hong Yeol Kim, Yun Ji Shin, Jung Gon Kim, Hiroshi Harima, Ji Hyun Kim, Wook Bahng

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Etch pits were investigated using the molten KOH selective etching method to examine dependence of etch pit shape and size on free electron concentration. The free electron concentrations of highly doped 4H-silicon carbide (SiC) were controlled by proton irradiation and thermal annealing, which was confirmed by a frequency shift in the LO-phonon-plasmon-coupled (LOPC) mode on micro-Raman spectroscopy. The proton irradiated sample with 5×1015 cm -2 fluence and an intrinsic semi-insulating sample showed clearly classified etch pits but different ratios of threading screw dislocation (TSD) and threading edge dislocation (TED) sizes. Easily classified TEDs and TSDs on proton irradiated 4H-SiC were restored as highly doped 4H-SiC after thermal annealing due to the recovered carrier concentrations. The etched surface of proton irradiated 4H-SiC and boron implanted SiC showed different surface conditions after activation.

Original languageEnglish
Pages (from-to)38-42
Number of pages5
JournalJournal of Crystal Growth
Volume369
DOIs
Publication statusPublished - 2013 Mar 1

Fingerprint

Silicon carbide
silicon carbides
free electrons
Electrons
Protons
protons
transferred electron devices
Annealing
Proton irradiation
Boron carbide
Edge dislocations
Screw dislocations
annealing
proton irradiation
screw dislocations
edge dislocations
coupled modes
frequency shift
Carrier concentration
Raman spectroscopy

Keywords

  • A1. Characterization
  • A1. Doping
  • A1. Etching
  • A1. Line defects
  • B2. Semiconducting materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Etch pit investigation of free electron concentration controlled 4H-SiC. / Kim, Hong Yeol; Shin, Yun Ji; Kim, Jung Gon; Harima, Hiroshi; Kim, Ji Hyun; Bahng, Wook.

In: Journal of Crystal Growth, Vol. 369, 01.03.2013, p. 38-42.

Research output: Contribution to journalArticle

Kim, Hong Yeol ; Shin, Yun Ji ; Kim, Jung Gon ; Harima, Hiroshi ; Kim, Ji Hyun ; Bahng, Wook. / Etch pit investigation of free electron concentration controlled 4H-SiC. In: Journal of Crystal Growth. 2013 ; Vol. 369. pp. 38-42.
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