Etch pit investigation of free electron concentration controlled 4H-SiC

Hong Yeol Kim, Yun Ji Shin, Jung Gon Kim, Hiroshi Harima, Jihyun Kim, Wook Bahng

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Etch pits were investigated using the molten KOH selective etching method to examine dependence of etch pit shape and size on free electron concentration. The free electron concentrations of highly doped 4H-silicon carbide (SiC) were controlled by proton irradiation and thermal annealing, which was confirmed by a frequency shift in the LO-phonon-plasmon-coupled (LOPC) mode on micro-Raman spectroscopy. The proton irradiated sample with 5×1015 cm -2 fluence and an intrinsic semi-insulating sample showed clearly classified etch pits but different ratios of threading screw dislocation (TSD) and threading edge dislocation (TED) sizes. Easily classified TEDs and TSDs on proton irradiated 4H-SiC were restored as highly doped 4H-SiC after thermal annealing due to the recovered carrier concentrations. The etched surface of proton irradiated 4H-SiC and boron implanted SiC showed different surface conditions after activation.

Original languageEnglish
Pages (from-to)38-42
Number of pages5
JournalJournal of Crystal Growth
Volume369
DOIs
Publication statusPublished - 2013

Keywords

  • A1. Characterization
  • A1. Doping
  • A1. Etching
  • A1. Line defects
  • B2. Semiconducting materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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