Etched surface morphology of heteroepitaxial nonpolar (11 2 0) and semipolar (11 2 2) GaN films by photoenhanced chemical wet etching

Kwang Hyeon Baik, Hoo Young Song, Sung Min Hwang, Younghun Jung, Jaehui Ahn, Ji Hyun Kim

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21 Citations (Scopus)


We investigated how selective wet etching changes the surface morphologies of nonpolar a-plane (11 2 0) and semipolar (11 2 2) GaN films grown on sapphire substrates. Trigonal prisms with various widths are seen on the top surface and the tapered sidewall facet of the a-plane GaN films along the c-axis direction. Inclined trigonal unit cells are observed on the semipolar (11 2 2) GaN films after wet etching. The specific crystallographic planes of (10 1 0), (01 1 0), and (0001) were exposed in common for both the GaN films, indicating that these planes are chemically stable due to atomic bond configurations and smaller density of atoms. Photoenhanced chemical wet etching proceeds on the a-plane and semipolar GaN films until chemically stable m-plane GaN surfaces as well as c-plane GaN surfaces are exposed.

Original languageEnglish
JournalJournal of the Electrochemical Society
Issue number4
Publication statusPublished - 2011 Apr 29


ASJC Scopus subject areas

  • Electrochemistry
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics

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