Etching characteristics of Ba(Mg1/3Ta2/3)O3 film by using Cl2/SF6 electron cyclotron resonance plasma

Kwang Ho Kwon, Seung Youl Kang, Sang Kyun Lee, Sung Ihl Kim, Nam Kwan Hong, Sahn Nahm, Young Sik Kim

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5 Citations (Scopus)


We investigated the etch characteristics of Ba(Mg1/3Ta2/3)O3 (BMT) films using Cl2/SF6 gas mixtures with electron cyclotron resonance plasma. The etch rate in pure Cl2 gas plasma was approximately 1250 Å/min and was decreased by the addition of SF6. By quadrupole mass spectrometer analysis, we found that the etch rate had a close relationship to the Cl radical. The surface reaction on the BMT films during the etch was examined by X-ray photoelectron spectroscopy analysis. It is proposed that the BaClxOy compound has been formed by Cl2 gas plasma. The chemical surface reaction and BMT etch characteristics with SF6/Cl2 gas chemistries are discussed in detail.

Original languageEnglish
Pages (from-to)C280-C283
JournalJournal of the Electrochemical Society
Issue number5
Publication statusPublished - 2002 May

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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