Etching characteristics of Ba(Mg1/3Ta2/3)O3 film by using Cl2/SF6 electron cyclotron resonance plasma

Kwang Ho Kwon, Seung Youl Kang, Sang Kyun Lee, Sung Ihl Kim, Nam Kwan Hong, Sahn Nahm, Young Sik Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We investigated the etch characteristics of Ba(Mg1/3Ta2/3)O3 (BMT) films using Cl2/SF6 gas mixtures with electron cyclotron resonance plasma. The etch rate in pure Cl2 gas plasma was approximately 1250 Å/min and was decreased by the addition of SF6. By quadrupole mass spectrometer analysis, we found that the etch rate had a close relationship to the Cl radical. The surface reaction on the BMT films during the etch was examined by X-ray photoelectron spectroscopy analysis. It is proposed that the BaClxOy compound has been formed by Cl2 gas plasma. The chemical surface reaction and BMT etch characteristics with SF6/Cl2 gas chemistries are discussed in detail.

Original languageEnglish
Pages (from-to)C280-C283
JournalJournal of the Electrochemical Society
Volume149
Issue number5
DOIs
Publication statusPublished - 2002 May

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Etching characteristics of Ba(Mg<sub>1/3</sub>Ta<sub>2/3</sub>)O<sub>3</sub> film by using Cl<sub>2</sub>/SF<sub>6</sub> electron cyclotron resonance plasma'. Together they form a unique fingerprint.

  • Cite this