Evaluating and designing the optimal 2D collector profile for a 300 GHz SiGe HBT

Andreas D. Stricker, Gregory Freeman, Marwan Khater, Jae-Sung Rieh

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

An optimally designed selectively implanted collector (SIC) doping profile allows keeping a SiGe-HBT's current in a vertical flow under the emitter while minimizing the parasitic collector-base capacitance (Ccb). TCAD simulations were used to provide insight into a 300 GHz HBT's current flow lines and to derive design guidelines for the optimal mask width of the SIC implant. This boosted the HBT's transit frequency (ft) by 6.5% and the unity power gain (fmax) by 23%.

Original languageEnglish
Pages (from-to)295-299
Number of pages5
JournalMaterials Science in Semiconductor Processing
Volume8
Issue number1-3 SPEC. ISS.
DOIs
Publication statusPublished - 2005 Feb 1
Externally publishedYes

Keywords

  • Current distribution
  • Depletion zone
  • Device simulation
  • HBT
  • Hetero bipolar junction transistor
  • Implant optimization
  • Process simulation
  • Selectively implanted collector
  • SIC
  • SiGe
  • Silicon-germanium
  • TCAD

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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