Evaluation of acceptor binding energy of nitrogen- doped zinc oxide thin films grown by dielectric barrier discharge in pulsed laser deposition

Deuk Hee Lee, Yoon Soo Chun, Sang Yeol Lee, Sangsig Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In this research, nitrogen (N)-doped zinc oxide (ZnO) thin films have been grown on a sapphire substrate by dielectric barrier discharge (DBD) in pulsed laser deposition (PLD). DBD has been used as an effective way for massive in-situ generation of N-plasma under conventional PLD process conditions. Low-temperature photoluminescence spectra of N-doped ZnO thin films provided near-band-edge emission after a thermal annealing process. The emission peak was resolved by Gaussian fitting and showed a dominant acceptor-bound excitation peak (A<sup>0</sup>X) that indicated acceptor doping of ZnO with N. The acceptor binding energy of the N acceptor was estimated to be approximately 145 MeV based on the results of temperature-dependent photoluminescence (PL) measurements.

Original languageEnglish
Pages (from-to)200-203
Number of pages4
JournalTransactions on Electrical and Electronic Materials
Volume12
Issue number5
DOIs
Publication statusPublished - 2011

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Keywords

  • Acceptor binding energy
  • Dielectric barrier discharge
  • Nitrogen-doped zinc oxide
  • Photoluminescence
  • Pulsed laser deposition

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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