Evaluation of CdTexSe1-x crystals grown from a Te-rich solution

U. N. Roy; A. E. Bolotnikov; G. S. Camarda; Y. Cui; A. Hossain; K. Lee; G. Yang; R. B. James

doi:10.1016/j.jcrysgro.2013.11.074

Evaluation of CdTe_xSe_1-x crystals grown from a Te-rich solution

U. N. Roy, A. E. Bolotnikov, G. S. Camarda, Y. Cui, A. Hossain, K. Lee, G. Yang, R. B. James

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We characterized the structural quality of CdTe_xSe_1-x crystals grown by the Traveling Heater Method (THM) from a Te-rich solution using Synchrotron White Beam X-ray Diffraction Topography in the reflection mode. Structural defects were also studied by chemical etching of the crystal surfaces. The crystals were found to be fairly free from strains, and they had very few sub-grain boundaries and dislocation/sub-grain boundary networks.

Original language	English
Pages (from-to)	99-102
Number of pages	4
Journal	Journal of Crystal Growth
Volume	389
DOIs	https://doi.org/10.1016/j.jcrysgro.2013.11.074
Publication status	Published - 2014 Mar 1
Externally published	Yes

Keywords

A1. Characterization
A1. Extended defects
A1. Sub-grain boundary network
A2. THM
B2. CdTeSe
B2. Semiconducting II-VI materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2013.11.074

Cite this

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title = "Evaluation of CdTexSe1-x crystals grown from a Te-rich solution",

abstract = "We characterized the structural quality of CdTexSe1-x crystals grown by the Traveling Heater Method (THM) from a Te-rich solution using Synchrotron White Beam X-ray Diffraction Topography in the reflection mode. Structural defects were also studied by chemical etching of the crystal surfaces. The crystals were found to be fairly free from strains, and they had very few sub-grain boundaries and dislocation/sub-grain boundary networks.",

keywords = "A1. Characterization, A1. Extended defects, A1. Sub-grain boundary network, A2. THM, B2. CdTeSe, B2. Semiconducting II-VI materials",

author = "Roy, {U. N.} and Bolotnikov, {A. E.} and Camarda, {G. S.} and Y. Cui and A. Hossain and K. Lee and G. Yang and James, {R. B.}",

note = "Funding Information: This work was supported by the U.S. Department of Energy , Office of Defense Nuclear Nonproliferation Research and Development , DNN R&D . The manuscript has been authored by Brookhaven Science Associates , LLC under Contract no. DE-AC02-98CH10886 with the U.S. Department of Energy. ",

year = "2014",

month = mar,

day = "1",

doi = "10.1016/j.jcrysgro.2013.11.074",

language = "English",

volume = "389",

pages = "99--102",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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TY - JOUR

T1 - Evaluation of CdTexSe1-x crystals grown from a Te-rich solution

AU - Roy, U. N.

AU - Bolotnikov, A. E.

AU - Camarda, G. S.

AU - Cui, Y.

AU - Hossain, A.

AU - Lee, K.

AU - Yang, G.

AU - James, R. B.

N1 - Funding Information: This work was supported by the U.S. Department of Energy , Office of Defense Nuclear Nonproliferation Research and Development , DNN R&D . The manuscript has been authored by Brookhaven Science Associates , LLC under Contract no. DE-AC02-98CH10886 with the U.S. Department of Energy.

PY - 2014/3/1

Y1 - 2014/3/1

N2 - We characterized the structural quality of CdTexSe1-x crystals grown by the Traveling Heater Method (THM) from a Te-rich solution using Synchrotron White Beam X-ray Diffraction Topography in the reflection mode. Structural defects were also studied by chemical etching of the crystal surfaces. The crystals were found to be fairly free from strains, and they had very few sub-grain boundaries and dislocation/sub-grain boundary networks.

AB - We characterized the structural quality of CdTexSe1-x crystals grown by the Traveling Heater Method (THM) from a Te-rich solution using Synchrotron White Beam X-ray Diffraction Topography in the reflection mode. Structural defects were also studied by chemical etching of the crystal surfaces. The crystals were found to be fairly free from strains, and they had very few sub-grain boundaries and dislocation/sub-grain boundary networks.

KW - A1. Characterization

KW - A1. Extended defects

KW - A1. Sub-grain boundary network

KW - A2. THM

KW - B2. CdTeSe

KW - B2. Semiconducting II-VI materials

UR - http://www.scopus.com/inward/record.url?scp=84890898243&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2013.11.074

DO - 10.1016/j.jcrysgro.2013.11.074

M3 - Article

AN - SCOPUS:84890898243

SN - 0022-0248

VL - 389

SP - 99

EP - 102

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -