Evaluation of Zn{N[Si(CH3)3]2}2 as a p-type dopant in OMVPE growth of ZnSe

W. S. Rees, D. M. Green, T. J. Anderson, E. Bretschneider, B. Pathangey, C. Park, Ji Hyun Kim

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Abstract

We have grown nominally undoped ZnSe on GaAs from the precursors H2Se and Et2Zn. Replacement of Et2Zn by Zn[N(TMS)2]2 produced crystalline ZnSe of a lesser quality. Data indicate incorporation of nitrogen into the films when Et2Zn is utilized as the main zinc source with Zn[N(TMS)2]2 being introduced at dopant levels. Characterization techniques employed include NMR, XRD, SIMS, SEM, PL, RGA, GC/MS, and Raman spectroscopy.

Original languageEnglish
Pages (from-to)361-366
Number of pages6
JournalJournal of Electronic Materials
Volume21
Issue number3
DOIs
Publication statusPublished - 1992 Mar 1
Externally publishedYes

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Keywords

  • nitrogen doping
  • OMVPE
  • Raman spectroscopy
  • ZnSe

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Electrical and Electronic Engineering

Cite this

Rees, W. S., Green, D. M., Anderson, T. J., Bretschneider, E., Pathangey, B., Park, C., & Kim, J. H. (1992). Evaluation of Zn{N[Si(CH3)3]2}2 as a p-type dopant in OMVPE growth of ZnSe. Journal of Electronic Materials, 21(3), 361-366. https://doi.org/10.1007/BF02660467