Evolution of strain throughout gallium nitride deposited on silicon carbide

M. A. Mastro; N. D. Bassim; J. A. Freitas; M. E. Twigg; C. R. Eddy; D. K. Gaskill; R. L. Henry; R. T. Holm; J. Kim; P. G. Neudeck; A. J. Trunek; J. A. Powell

Evolution of strain throughout gallium nitride deposited on silicon carbide

M. A. Mastro, N. D. Bassim, J. A. Freitas, M. E. Twigg, C. R. Eddy, D. K. Gaskill, R. L. Henry, R. T. Holm, J. Kim, P. G. Neudeck, A. J. Trunek, J. A. Powell

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

During GaN growth on an on-axis SiC substrate, a large density of dislocations (∼10⁹ cm^-2) is unavoidably generated by the GaN/SiC misfit, uncontrolled misorientation in the substrate and defects present at the surface of the substrate. Recently a unique SiC substrate was developed with step-free and stepped mesas as well as continuous surface areas similar to a standard wafer all in close proximity. It is now possible to isolate the influence of defects and steps on the deposition of GaN on SiC. This paper provides a link between the dislocation environment and the strain state in the GaN film as well as the change of this strain with increasing thickness.

Original language	English
Pages (from-to)	331-335
Number of pages	5
Journal	Journal of Ceramic Processing Research
Volume	8
Issue number	5
Publication status	Published - 2007

Keywords

Gallium nitride
Growth
Silicon carbide
Strain

ASJC Scopus subject areas

Ceramics and Composites

Cite this

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title = "Evolution of strain throughout gallium nitride deposited on silicon carbide",

abstract = "During GaN growth on an on-axis SiC substrate, a large density of dislocations (∼109 cm-2) is unavoidably generated by the GaN/SiC misfit, uncontrolled misorientation in the substrate and defects present at the surface of the substrate. Recently a unique SiC substrate was developed with step-free and stepped mesas as well as continuous surface areas similar to a standard wafer all in close proximity. It is now possible to isolate the influence of defects and steps on the deposition of GaN on SiC. This paper provides a link between the dislocation environment and the strain state in the GaN film as well as the change of this strain with increasing thickness.",

keywords = "Gallium nitride, Growth, Silicon carbide, Strain",

author = "Mastro, {M. A.} and Bassim, {N. D.} and Freitas, {J. A.} and Twigg, {M. E.} and Eddy, {C. R.} and Gaskill, {D. K.} and Henry, {R. L.} and Holm, {R. T.} and J. Kim and Neudeck, {P. G.} and Trunek, {A. J.} and Powell, {J. A.}",

year = "2007",

language = "English",

volume = "8",

pages = "331--335",

journal = "Journal of Ceramic Processing Research",

issn = "1229-9162",

publisher = "Hanyang University",

number = "5",

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TY - JOUR

T1 - Evolution of strain throughout gallium nitride deposited on silicon carbide

AU - Mastro, M. A.

AU - Bassim, N. D.

AU - Freitas, J. A.

AU - Twigg, M. E.

AU - Eddy, C. R.

AU - Gaskill, D. K.

AU - Henry, R. L.

AU - Holm, R. T.

AU - Kim, J.

AU - Neudeck, P. G.

AU - Trunek, A. J.

AU - Powell, J. A.

PY - 2007

Y1 - 2007

N2 - During GaN growth on an on-axis SiC substrate, a large density of dislocations (∼109 cm-2) is unavoidably generated by the GaN/SiC misfit, uncontrolled misorientation in the substrate and defects present at the surface of the substrate. Recently a unique SiC substrate was developed with step-free and stepped mesas as well as continuous surface areas similar to a standard wafer all in close proximity. It is now possible to isolate the influence of defects and steps on the deposition of GaN on SiC. This paper provides a link between the dislocation environment and the strain state in the GaN film as well as the change of this strain with increasing thickness.

AB - During GaN growth on an on-axis SiC substrate, a large density of dislocations (∼109 cm-2) is unavoidably generated by the GaN/SiC misfit, uncontrolled misorientation in the substrate and defects present at the surface of the substrate. Recently a unique SiC substrate was developed with step-free and stepped mesas as well as continuous surface areas similar to a standard wafer all in close proximity. It is now possible to isolate the influence of defects and steps on the deposition of GaN on SiC. This paper provides a link between the dislocation environment and the strain state in the GaN film as well as the change of this strain with increasing thickness.

KW - Gallium nitride

KW - Growth

KW - Silicon carbide

KW - Strain

UR - http://www.scopus.com/inward/record.url?scp=36849003973&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:36849003973

VL - 8

SP - 331

EP - 335

JO - Journal of Ceramic Processing Research

JF - Journal of Ceramic Processing Research

SN - 1229-9162

IS - 5

ER -

Evolution of strain throughout gallium nitride deposited on silicon carbide

Abstract

Keywords

ASJC Scopus subject areas

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