Abstract
During GaN growth on an on-axis SiC substrate, a large density of dislocations (∼109 cm-2) is unavoidably generated by the GaN/SiC misfit, uncontrolled misorientation in the substrate and defects present at the surface of the substrate. Recently a unique SiC substrate was developed with step-free and stepped mesas as well as continuous surface areas similar to a standard wafer all in close proximity. It is now possible to isolate the influence of defects and steps on the deposition of GaN on SiC. This paper provides a link between the dislocation environment and the strain state in the GaN film as well as the change of this strain with increasing thickness.
| Original language | English |
|---|---|
| Pages (from-to) | 331-335 |
| Number of pages | 5 |
| Journal | Journal of Ceramic Processing Research |
| Volume | 8 |
| Issue number | 5 |
| Publication status | Published - 2007 |
Keywords
- Gallium nitride
- Growth
- Silicon carbide
- Strain
ASJC Scopus subject areas
- Ceramics and Composites
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Mastro, M. A., Bassim, N. D., Freitas, J. A., Twigg, M. E., Eddy, C. R., Gaskill, D. K., Henry, R. L., Holm, R. T., Kim, J., Neudeck, P. G., Trunek, A. J., & Powell, J. A. (2007). Evolution of strain throughout gallium nitride deposited on silicon carbide. Journal of Ceramic Processing Research, 8(5), 331-335.