Abstract
During GaN growth on an on-axis SiC substrate, a large density of dislocations (∼109 cm-2) is unavoidably generated by the GaN/SiC misfit, uncontrolled misorientation in the substrate and defects present at the surface of the substrate. Recently a unique SiC substrate was developed with step-free and stepped mesas as well as continuous surface areas similar to a standard wafer all in close proximity. It is now possible to isolate the influence of defects and steps on the deposition of GaN on SiC. This paper provides a link between the dislocation environment and the strain state in the GaN film as well as the change of this strain with increasing thickness.
| Original language | English |
|---|---|
| Pages (from-to) | 331-335 |
| Number of pages | 5 |
| Journal | Journal of Ceramic Processing Research |
| Volume | 8 |
| Issue number | 5 |
| Publication status | Published - 2007 Dec 14 |
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Keywords
- Gallium nitride
- Growth
- Silicon carbide
- Strain
ASJC Scopus subject areas
- Ceramics and Composites
Cite this
Evolution of strain throughout gallium nitride deposited on silicon carbide. / Mastro, M. A.; Bassim, N. D.; Freitas, J. A.; Twigg, M. E.; Eddy, C. R.; Gaskill, D. K.; Henry, R. L.; Holm, R. T.; Kim, Ji Hyun; Neudeck, P. G.; Trunek, A. J.; Powell, J. A.
In: Journal of Ceramic Processing Research, Vol. 8, No. 5, 14.12.2007, p. 331-335.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Evolution of strain throughout gallium nitride deposited on silicon carbide
AU - Mastro, M. A.
AU - Bassim, N. D.
AU - Freitas, J. A.
AU - Twigg, M. E.
AU - Eddy, C. R.
AU - Gaskill, D. K.
AU - Henry, R. L.
AU - Holm, R. T.
AU - Kim, Ji Hyun
AU - Neudeck, P. G.
AU - Trunek, A. J.
AU - Powell, J. A.
PY - 2007/12/14
Y1 - 2007/12/14
N2 - During GaN growth on an on-axis SiC substrate, a large density of dislocations (∼109 cm-2) is unavoidably generated by the GaN/SiC misfit, uncontrolled misorientation in the substrate and defects present at the surface of the substrate. Recently a unique SiC substrate was developed with step-free and stepped mesas as well as continuous surface areas similar to a standard wafer all in close proximity. It is now possible to isolate the influence of defects and steps on the deposition of GaN on SiC. This paper provides a link between the dislocation environment and the strain state in the GaN film as well as the change of this strain with increasing thickness.
AB - During GaN growth on an on-axis SiC substrate, a large density of dislocations (∼109 cm-2) is unavoidably generated by the GaN/SiC misfit, uncontrolled misorientation in the substrate and defects present at the surface of the substrate. Recently a unique SiC substrate was developed with step-free and stepped mesas as well as continuous surface areas similar to a standard wafer all in close proximity. It is now possible to isolate the influence of defects and steps on the deposition of GaN on SiC. This paper provides a link between the dislocation environment and the strain state in the GaN film as well as the change of this strain with increasing thickness.
KW - Gallium nitride
KW - Growth
KW - Silicon carbide
KW - Strain
UR - http://www.scopus.com/inward/record.url?scp=36849003973&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=36849003973&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:36849003973
VL - 8
SP - 331
EP - 335
JO - Journal of Ceramic Processing Research
JF - Journal of Ceramic Processing Research
SN - 1229-9162
IS - 5
ER -