Abstract
During GaN growth on an on-axis SiC substrate, a large density of dislocations (∼109 cm-2) is unavoidably generated by the GaN/SiC misfit, uncontrolled misorientation in the substrate and defects present at the surface of the substrate. Recently a unique SiC substrate was developed with step-free and stepped mesas as well as continuous surface areas similar to a standard wafer all in close proximity. It is now possible to isolate the influence of defects and steps on the deposition of GaN on SiC. This paper provides a link between the dislocation environment and the strain state in the GaN film as well as the change of this strain with increasing thickness.
Original language | English |
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Pages (from-to) | 331-335 |
Number of pages | 5 |
Journal | Journal of Ceramic Processing Research |
Volume | 8 |
Issue number | 5 |
Publication status | Published - 2007 |
Keywords
- Gallium nitride
- Growth
- Silicon carbide
- Strain
ASJC Scopus subject areas
- Ceramics and Composites