Evolution of strain throughout gallium nitride deposited on silicon carbide

M. A. Mastro, N. D. Bassim, J. A. Freitas, M. E. Twigg, C. R. Eddy, D. K. Gaskill, R. L. Henry, R. T. Holm, Ji Hyun Kim, P. G. Neudeck, A. J. Trunek, J. A. Powell

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

During GaN growth on an on-axis SiC substrate, a large density of dislocations (∼109 cm-2) is unavoidably generated by the GaN/SiC misfit, uncontrolled misorientation in the substrate and defects present at the surface of the substrate. Recently a unique SiC substrate was developed with step-free and stepped mesas as well as continuous surface areas similar to a standard wafer all in close proximity. It is now possible to isolate the influence of defects and steps on the deposition of GaN on SiC. This paper provides a link between the dislocation environment and the strain state in the GaN film as well as the change of this strain with increasing thickness.

Original languageEnglish
Pages (from-to)331-335
Number of pages5
JournalJournal of Ceramic Processing Research
Volume8
Issue number5
Publication statusPublished - 2007 Dec 14

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Gallium nitride
Silicon carbide
Substrates
Defects
silicon carbide
gallium nitride

Keywords

  • Gallium nitride
  • Growth
  • Silicon carbide
  • Strain

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Mastro, M. A., Bassim, N. D., Freitas, J. A., Twigg, M. E., Eddy, C. R., Gaskill, D. K., ... Powell, J. A. (2007). Evolution of strain throughout gallium nitride deposited on silicon carbide. Journal of Ceramic Processing Research, 8(5), 331-335.

Evolution of strain throughout gallium nitride deposited on silicon carbide. / Mastro, M. A.; Bassim, N. D.; Freitas, J. A.; Twigg, M. E.; Eddy, C. R.; Gaskill, D. K.; Henry, R. L.; Holm, R. T.; Kim, Ji Hyun; Neudeck, P. G.; Trunek, A. J.; Powell, J. A.

In: Journal of Ceramic Processing Research, Vol. 8, No. 5, 14.12.2007, p. 331-335.

Research output: Contribution to journalArticle

Mastro, MA, Bassim, ND, Freitas, JA, Twigg, ME, Eddy, CR, Gaskill, DK, Henry, RL, Holm, RT, Kim, JH, Neudeck, PG, Trunek, AJ & Powell, JA 2007, 'Evolution of strain throughout gallium nitride deposited on silicon carbide', Journal of Ceramic Processing Research, vol. 8, no. 5, pp. 331-335.
Mastro MA, Bassim ND, Freitas JA, Twigg ME, Eddy CR, Gaskill DK et al. Evolution of strain throughout gallium nitride deposited on silicon carbide. Journal of Ceramic Processing Research. 2007 Dec 14;8(5):331-335.
Mastro, M. A. ; Bassim, N. D. ; Freitas, J. A. ; Twigg, M. E. ; Eddy, C. R. ; Gaskill, D. K. ; Henry, R. L. ; Holm, R. T. ; Kim, Ji Hyun ; Neudeck, P. G. ; Trunek, A. J. ; Powell, J. A. / Evolution of strain throughout gallium nitride deposited on silicon carbide. In: Journal of Ceramic Processing Research. 2007 ; Vol. 8, No. 5. pp. 331-335.
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