Evolution of strain throughout gallium nitride deposited on silicon carbide

M. A. Mastro; N. D. Bassim; J. A. Freitas; M. E. Twigg; C. R. Eddy; D. K. Gaskill; R. L. Henry; R. T. Holm; J. Kim; P. G. Neudeck; A. J. Trunek; J. A. Powell

Evolution of strain throughout gallium nitride deposited on silicon carbide

M. A. Mastro, N. D. Bassim, J. A. Freitas, M. E. Twigg, C. R. Eddy, D. K. Gaskill, R. L. Henry, R. T. Holm, J. Kim, P. G. Neudeck, A. J. Trunek, J. A. Powell

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

During GaN growth on an on-axis SiC substrate, a large density of dislocations (∼10⁹ cm^-2) is unavoidably generated by the GaN/SiC misfit, uncontrolled misorientation in the substrate and defects present at the surface of the substrate. Recently a unique SiC substrate was developed with step-free and stepped mesas as well as continuous surface areas similar to a standard wafer all in close proximity. It is now possible to isolate the influence of defects and steps on the deposition of GaN on SiC. This paper provides a link between the dislocation environment and the strain state in the GaN film as well as the change of this strain with increasing thickness.

Original language	English
Pages (from-to)	331-335
Number of pages	5
Journal	Journal of Ceramic Processing Research
Volume	8
Issue number	5
Publication status	Published - 2007

Keywords

Gallium nitride
Growth
Silicon carbide
Strain

ASJC Scopus subject areas

Ceramics and Composites

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Evolution of strain throughout gallium nitride deposited on silicon carbide. / Mastro, M. A.; Bassim, N. D.; Freitas, J. A.; Twigg, M. E.; Eddy, C. R.; Gaskill, D. K.; Henry, R. L.; Holm, R. T.; Kim, J.; Neudeck, P. G.; Trunek, A. J.; Powell, J. A.

In: Journal of Ceramic Processing Research, Vol. 8, No. 5, 2007, p. 331-335.

Research output: Contribution to journal › Article › peer-review

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abstract = "During GaN growth on an on-axis SiC substrate, a large density of dislocations (∼109 cm-2) is unavoidably generated by the GaN/SiC misfit, uncontrolled misorientation in the substrate and defects present at the surface of the substrate. Recently a unique SiC substrate was developed with step-free and stepped mesas as well as continuous surface areas similar to a standard wafer all in close proximity. It is now possible to isolate the influence of defects and steps on the deposition of GaN on SiC. This paper provides a link between the dislocation environment and the strain state in the GaN film as well as the change of this strain with increasing thickness.",

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AU - Bassim, N. D.

AU - Freitas, J. A.

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AU - Eddy, C. R.

AU - Gaskill, D. K.

AU - Henry, R. L.

AU - Holm, R. T.

AU - Kim, J.

AU - Neudeck, P. G.

AU - Trunek, A. J.

AU - Powell, J. A.

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AB - During GaN growth on an on-axis SiC substrate, a large density of dislocations (∼109 cm-2) is unavoidably generated by the GaN/SiC misfit, uncontrolled misorientation in the substrate and defects present at the surface of the substrate. Recently a unique SiC substrate was developed with step-free and stepped mesas as well as continuous surface areas similar to a standard wafer all in close proximity. It is now possible to isolate the influence of defects and steps on the deposition of GaN on SiC. This paper provides a link between the dislocation environment and the strain state in the GaN film as well as the change of this strain with increasing thickness.

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KW - Strain

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