Evolution of stress relaxation and yellow luminescence in GaN/sapphire by Si incorporation

In-Hwan Lee, In Hoon Choi, C. R. Lee, S. K. Noh

Research output: Contribution to journalArticle

100 Citations (Scopus)

Abstract

We report a systematic study accomplished with a series of undoped and Si-doped GaN epilayers grown on sapphire (0001) with the carrier concentration of 4.0×10 19 - 1.6×10 19 cm -3 in order to investigate the evolution of stress relaxation and yellow luminescence by Si incorporation. As the Si doping becomes higher, the bound exciton peaks are gradually shitted to lower energy due to relaxation of the thermal residual stress with the linear coefficient of ΔE/ Δσ∥ =42 meV/GPa. The present results show that both the full width at half maximum of double-crystal x-ray diffractometry and the photoluminescence intensity ratio of the yellow luminescence to edge emission gradually increase as the Si incorporation becomes heavier. We suggest that the Si doping in GaN epilayers induces overall defects and gives rise to stress relaxation during the cool-down process, and the yellow luminescence may be originated from a complex of V Ga and the Si-induced defect.

Original languageEnglish
Pages (from-to)1359-1361
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number10
DOIs
Publication statusPublished - 1997 Sep 8

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stress relaxation
sapphire
luminescence
defects
thermal stresses
residual stress
excitons
photoluminescence
coefficients
crystals
x rays
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Evolution of stress relaxation and yellow luminescence in GaN/sapphire by Si incorporation. / Lee, In-Hwan; Choi, In Hoon; Lee, C. R.; Noh, S. K.

In: Applied Physics Letters, Vol. 71, No. 10, 08.09.1997, p. 1359-1361.

Research output: Contribution to journalArticle

Lee, In-Hwan ; Choi, In Hoon ; Lee, C. R. ; Noh, S. K. / Evolution of stress relaxation and yellow luminescence in GaN/sapphire by Si incorporation. In: Applied Physics Letters. 1997 ; Vol. 71, No. 10. pp. 1359-1361.
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