Evolution of surface morphology in the initial stage of nitridation of the Si(111)-7 × 7 surface by nitrogen ions

Jeong Sook Ha, Kang Ho Park, Wan Soo Yun, El Hang Lee, Seong Ju Park

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The evolution of surface morphology in the initial stage of nitridation of Si(111)-7 × 7 has been investigated by using a scanning tunneling microscope (STM) and low energy electron diffraction (LEED). The STM and LEED measurements were done on the Si(111) surface nitrided under different experimental conditions including the variations in the nitrogen ion energy, nitrogen ion dose, nitridation temperature, and the postannealing temperature. A growth mechanism of the silicon nitride layer in the initial stage was proposed based upon a comparison of the surface morphology obtained under different nitridation conditions. For the growth of uniform and large silicon nitride islands, it was necessary to have proper heat treatment of the surface. In particular, the surface postannealed at 980°C after nitridation at 950°C produced dramatically enlarged flat silicon nitride islands compared to that postannealed at the same temperature after nitridation at room temperature, and is probably due to improved mobilities of the reacting species with elevation of the nitridation temperature.

Original languageEnglish
Pages (from-to)1893-1898
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number6
Publication statusPublished - 1997 Nov 1
Externally publishedYes


ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

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