Evolution of surface morphology in the initial stage of nitridation of the Si(111)-7 × 7 surface by nitrogen ions

Jeong Sook Ha, Kang Ho Park, Wan Soo Yun, El Hang Lee, Seong Ju Park

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The evolution of surface morphology in the initial stage of nitridation of Si(111)-7 × 7 has been investigated by using a scanning tunneling microscope (STM) and low energy electron diffraction (LEED). The STM and LEED measurements were done on the Si(111) surface nitrided under different experimental conditions including the variations in the nitrogen ion energy, nitrogen ion dose, nitridation temperature, and the postannealing temperature. A growth mechanism of the silicon nitride layer in the initial stage was proposed based upon a comparison of the surface morphology obtained under different nitridation conditions. For the growth of uniform and large silicon nitride islands, it was necessary to have proper heat treatment of the surface. In particular, the surface postannealed at 980°C after nitridation at 950°C produced dramatically enlarged flat silicon nitride islands compared to that postannealed at the same temperature after nitridation at room temperature, and is probably due to improved mobilities of the reacting species with elevation of the nitridation temperature.

Original languageEnglish
Pages (from-to)1893-1898
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume15
Issue number6
Publication statusPublished - 1997 Nov 1
Externally publishedYes

Fingerprint

Nitridation
nitrogen ions
Surface morphology
Nitrogen
silicon nitrides
Ions
Silicon nitride
Low energy electron diffraction
electron diffraction
microscopes
Microscopes
Temperature
scanning
temperature
Scanning
energy
heat treatment
dosage
Heat treatment
room temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

Evolution of surface morphology in the initial stage of nitridation of the Si(111)-7 × 7 surface by nitrogen ions. / Ha, Jeong Sook; Park, Kang Ho; Yun, Wan Soo; Lee, El Hang; Park, Seong Ju.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 15, No. 6, 01.11.1997, p. 1893-1898.

Research output: Contribution to journalArticle

@article{f065f1ead259477cb479eb65067c46cf,
title = "Evolution of surface morphology in the initial stage of nitridation of the Si(111)-7 × 7 surface by nitrogen ions",
abstract = "The evolution of surface morphology in the initial stage of nitridation of Si(111)-7 × 7 has been investigated by using a scanning tunneling microscope (STM) and low energy electron diffraction (LEED). The STM and LEED measurements were done on the Si(111) surface nitrided under different experimental conditions including the variations in the nitrogen ion energy, nitrogen ion dose, nitridation temperature, and the postannealing temperature. A growth mechanism of the silicon nitride layer in the initial stage was proposed based upon a comparison of the surface morphology obtained under different nitridation conditions. For the growth of uniform and large silicon nitride islands, it was necessary to have proper heat treatment of the surface. In particular, the surface postannealed at 980°C after nitridation at 950°C produced dramatically enlarged flat silicon nitride islands compared to that postannealed at the same temperature after nitridation at room temperature, and is probably due to improved mobilities of the reacting species with elevation of the nitridation temperature.",
author = "Ha, {Jeong Sook} and Park, {Kang Ho} and Yun, {Wan Soo} and Lee, {El Hang} and Park, {Seong Ju}",
year = "1997",
month = "11",
day = "1",
language = "English",
volume = "15",
pages = "1893--1898",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "6",

}

TY - JOUR

T1 - Evolution of surface morphology in the initial stage of nitridation of the Si(111)-7 × 7 surface by nitrogen ions

AU - Ha, Jeong Sook

AU - Park, Kang Ho

AU - Yun, Wan Soo

AU - Lee, El Hang

AU - Park, Seong Ju

PY - 1997/11/1

Y1 - 1997/11/1

N2 - The evolution of surface morphology in the initial stage of nitridation of Si(111)-7 × 7 has been investigated by using a scanning tunneling microscope (STM) and low energy electron diffraction (LEED). The STM and LEED measurements were done on the Si(111) surface nitrided under different experimental conditions including the variations in the nitrogen ion energy, nitrogen ion dose, nitridation temperature, and the postannealing temperature. A growth mechanism of the silicon nitride layer in the initial stage was proposed based upon a comparison of the surface morphology obtained under different nitridation conditions. For the growth of uniform and large silicon nitride islands, it was necessary to have proper heat treatment of the surface. In particular, the surface postannealed at 980°C after nitridation at 950°C produced dramatically enlarged flat silicon nitride islands compared to that postannealed at the same temperature after nitridation at room temperature, and is probably due to improved mobilities of the reacting species with elevation of the nitridation temperature.

AB - The evolution of surface morphology in the initial stage of nitridation of Si(111)-7 × 7 has been investigated by using a scanning tunneling microscope (STM) and low energy electron diffraction (LEED). The STM and LEED measurements were done on the Si(111) surface nitrided under different experimental conditions including the variations in the nitrogen ion energy, nitrogen ion dose, nitridation temperature, and the postannealing temperature. A growth mechanism of the silicon nitride layer in the initial stage was proposed based upon a comparison of the surface morphology obtained under different nitridation conditions. For the growth of uniform and large silicon nitride islands, it was necessary to have proper heat treatment of the surface. In particular, the surface postannealed at 980°C after nitridation at 950°C produced dramatically enlarged flat silicon nitride islands compared to that postannealed at the same temperature after nitridation at room temperature, and is probably due to improved mobilities of the reacting species with elevation of the nitridation temperature.

UR - http://www.scopus.com/inward/record.url?scp=0001158066&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001158066&partnerID=8YFLogxK

M3 - Article

VL - 15

SP - 1893

EP - 1898

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 6

ER -