The evolution of surface morphology in the initial stage of nitridation of Si(111)-7 × 7 has been investigated by using a scanning tunneling microscope (STM) and low energy electron diffraction (LEED). The STM and LEED measurements were done on the Si(111) surface nitrided under different experimental conditions including the variations in the nitrogen ion energy, nitrogen ion dose, nitridation temperature, and the postannealing temperature. A growth mechanism of the silicon nitride layer in the initial stage was proposed based upon a comparison of the surface morphology obtained under different nitridation conditions. For the growth of uniform and large silicon nitride islands, it was necessary to have proper heat treatment of the surface. In particular, the surface postannealed at 980°C after nitridation at 950°C produced dramatically enlarged flat silicon nitride islands compared to that postannealed at the same temperature after nitridation at room temperature, and is probably due to improved mobilities of the reacting species with elevation of the nitridation temperature.
|Number of pages||6|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 1997 Nov|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering