Exchange coupling in magnetic semiconductor multilayers and superlattices

J. K. Furdyna, J. Leiner, X. Liu, M. Dobrowolska, Sang Hoon Lee, Jaiho Chung, B. J. Kirby

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The study of ferromagnetic semiconductors continues to be of great interest because of their potential for spintronic devices. While there has been much progress in our understanding of ferromagnetic semiconductor materials - particularly of the canonical III-V system Ga 1-xMn xAs - many issues still remain unresolved. One of these is the nature of interlayer exchange coupling in GaMnAs-based multilayers, an issue that is important from the point of view of possible spintronic applications. In this connection, it is important to establish under what conditions the interlayer exchange coupling between successive GaMnAs layers is antiferromagnetic or ferromagnetic, since manipulation of such interlayer exchange coupling can then be directly applied to achieve giant magnetoresistance and other devices based on this material. In this review we will describe magneto-transport, magnetization, and neutron refuectometry experiments applied to two types of GaMnAs-based multilayer structures - superlattices and tri-layers - consisting of GaMnAs layers separated by non-magnetic GaAs spacers. These measurements serve to identify conditions under which AFM coupling will occur in such GaMnAs/GaAs multilayer systems, thus providing us the information which can be used for manipulating magnetization (and thus also giant magnetoresistance) in structures based on the ferromagnetic semiconductor GaMnAs.

Original languageEnglish
Pages (from-to)973-980
Number of pages8
JournalActa Physica Polonica A
Volume121
Issue number5-6
Publication statusPublished - 2012 May 1

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superlattices
interlayers
magnetization
spacers
laminates
manipulators
atomic force microscopy
neutrons

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Furdyna, J. K., Leiner, J., Liu, X., Dobrowolska, M., Lee, S. H., Chung, J., & Kirby, B. J. (2012). Exchange coupling in magnetic semiconductor multilayers and superlattices. Acta Physica Polonica A, 121(5-6), 973-980.

Exchange coupling in magnetic semiconductor multilayers and superlattices. / Furdyna, J. K.; Leiner, J.; Liu, X.; Dobrowolska, M.; Lee, Sang Hoon; Chung, Jaiho; Kirby, B. J.

In: Acta Physica Polonica A, Vol. 121, No. 5-6, 01.05.2012, p. 973-980.

Research output: Contribution to journalArticle

Furdyna, JK, Leiner, J, Liu, X, Dobrowolska, M, Lee, SH, Chung, J & Kirby, BJ 2012, 'Exchange coupling in magnetic semiconductor multilayers and superlattices', Acta Physica Polonica A, vol. 121, no. 5-6, pp. 973-980.
Furdyna JK, Leiner J, Liu X, Dobrowolska M, Lee SH, Chung J et al. Exchange coupling in magnetic semiconductor multilayers and superlattices. Acta Physica Polonica A. 2012 May 1;121(5-6):973-980.
Furdyna, J. K. ; Leiner, J. ; Liu, X. ; Dobrowolska, M. ; Lee, Sang Hoon ; Chung, Jaiho ; Kirby, B. J. / Exchange coupling in magnetic semiconductor multilayers and superlattices. In: Acta Physica Polonica A. 2012 ; Vol. 121, No. 5-6. pp. 973-980.
@article{309edb681c57470aa73de2de7e991a0b,
title = "Exchange coupling in magnetic semiconductor multilayers and superlattices",
abstract = "The study of ferromagnetic semiconductors continues to be of great interest because of their potential for spintronic devices. While there has been much progress in our understanding of ferromagnetic semiconductor materials - particularly of the canonical III-V system Ga 1-xMn xAs - many issues still remain unresolved. One of these is the nature of interlayer exchange coupling in GaMnAs-based multilayers, an issue that is important from the point of view of possible spintronic applications. In this connection, it is important to establish under what conditions the interlayer exchange coupling between successive GaMnAs layers is antiferromagnetic or ferromagnetic, since manipulation of such interlayer exchange coupling can then be directly applied to achieve giant magnetoresistance and other devices based on this material. In this review we will describe magneto-transport, magnetization, and neutron refuectometry experiments applied to two types of GaMnAs-based multilayer structures - superlattices and tri-layers - consisting of GaMnAs layers separated by non-magnetic GaAs spacers. These measurements serve to identify conditions under which AFM coupling will occur in such GaMnAs/GaAs multilayer systems, thus providing us the information which can be used for manipulating magnetization (and thus also giant magnetoresistance) in structures based on the ferromagnetic semiconductor GaMnAs.",
author = "Furdyna, {J. K.} and J. Leiner and X. Liu and M. Dobrowolska and Lee, {Sang Hoon} and Jaiho Chung and Kirby, {B. J.}",
year = "2012",
month = "5",
day = "1",
language = "English",
volume = "121",
pages = "973--980",
journal = "Acta Physica Polonica A",
issn = "0587-4246",
publisher = "Polish Academy of Sciences Publishing House",
number = "5-6",

}

TY - JOUR

T1 - Exchange coupling in magnetic semiconductor multilayers and superlattices

AU - Furdyna, J. K.

AU - Leiner, J.

AU - Liu, X.

AU - Dobrowolska, M.

AU - Lee, Sang Hoon

AU - Chung, Jaiho

AU - Kirby, B. J.

PY - 2012/5/1

Y1 - 2012/5/1

N2 - The study of ferromagnetic semiconductors continues to be of great interest because of their potential for spintronic devices. While there has been much progress in our understanding of ferromagnetic semiconductor materials - particularly of the canonical III-V system Ga 1-xMn xAs - many issues still remain unresolved. One of these is the nature of interlayer exchange coupling in GaMnAs-based multilayers, an issue that is important from the point of view of possible spintronic applications. In this connection, it is important to establish under what conditions the interlayer exchange coupling between successive GaMnAs layers is antiferromagnetic or ferromagnetic, since manipulation of such interlayer exchange coupling can then be directly applied to achieve giant magnetoresistance and other devices based on this material. In this review we will describe magneto-transport, magnetization, and neutron refuectometry experiments applied to two types of GaMnAs-based multilayer structures - superlattices and tri-layers - consisting of GaMnAs layers separated by non-magnetic GaAs spacers. These measurements serve to identify conditions under which AFM coupling will occur in such GaMnAs/GaAs multilayer systems, thus providing us the information which can be used for manipulating magnetization (and thus also giant magnetoresistance) in structures based on the ferromagnetic semiconductor GaMnAs.

AB - The study of ferromagnetic semiconductors continues to be of great interest because of their potential for spintronic devices. While there has been much progress in our understanding of ferromagnetic semiconductor materials - particularly of the canonical III-V system Ga 1-xMn xAs - many issues still remain unresolved. One of these is the nature of interlayer exchange coupling in GaMnAs-based multilayers, an issue that is important from the point of view of possible spintronic applications. In this connection, it is important to establish under what conditions the interlayer exchange coupling between successive GaMnAs layers is antiferromagnetic or ferromagnetic, since manipulation of such interlayer exchange coupling can then be directly applied to achieve giant magnetoresistance and other devices based on this material. In this review we will describe magneto-transport, magnetization, and neutron refuectometry experiments applied to two types of GaMnAs-based multilayer structures - superlattices and tri-layers - consisting of GaMnAs layers separated by non-magnetic GaAs spacers. These measurements serve to identify conditions under which AFM coupling will occur in such GaMnAs/GaAs multilayer systems, thus providing us the information which can be used for manipulating magnetization (and thus also giant magnetoresistance) in structures based on the ferromagnetic semiconductor GaMnAs.

UR - http://www.scopus.com/inward/record.url?scp=84861985382&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84861985382&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:84861985382

VL - 121

SP - 973

EP - 980

JO - Acta Physica Polonica A

JF - Acta Physica Polonica A

SN - 0587-4246

IS - 5-6

ER -