Excimer laser annealing effects on AlGaN/GaN heterostructures

In Hak Lee, Beom Soo Joo, Hyuk Jin Kim, Ye Seul Yun, Seun Yup Jang, Min Gyu Kang, Chong-Yun Kang, Byeong Gyu Park, Moonsup Han, Young Jun Chang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We investigated impact of excimer laser annealing on the AlGaN/GaN heterojunction structures, where the 2-dimensional electron gas (2DEG) is formed. When applying homogeneous laser pulses at various laser densities, the electrical resistance of the 2DEG shows sudden increase along with sharp decrease of the carrier mobility and slight decrease of the carrier density. Especially, when applying laser density of 300 mJ/cm2, we could obtain such jump of electrical resistance even after 2 min, i.e. 2400 pulses at 20 Hz. Low temperature photoluminescence and x-ray photoemission spectroscopy measurements show that the excimer laser annealing suppresses the coherent charge carriers and oxides the sample surface to form Ga2O. We estimate the activation energy of suppressing 2DEG to be 0.89 eV for the ELA process. We suggest that the excimer laser annealing has potential for gate oxide fabrication, surface passivation, and lateral pattering of 2DEG structures.

Original languageEnglish
Pages (from-to)628-632
Number of pages5
JournalCurrent Applied Physics
Volume16
Issue number6
DOIs
Publication statusPublished - 2016 Jun 1

Fingerprint

Electron gas
laser annealing
Excimer lasers
excimer lasers
electron gas
Heterojunctions
Annealing
Acoustic impedance
electrical resistance
Oxides
lasers
oxides
Lasers
Carrier mobility
Photoelectron spectroscopy
carrier mobility
pulses
Charge carriers
Passivation
passivity

Keywords

  • GaN
  • Hall measurement
  • Laser annealing
  • PL
  • XPS

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Lee, I. H., Joo, B. S., Kim, H. J., Yun, Y. S., Jang, S. Y., Kang, M. G., ... Chang, Y. J. (2016). Excimer laser annealing effects on AlGaN/GaN heterostructures. Current Applied Physics, 16(6), 628-632. https://doi.org/10.1016/j.cap.2016.03.013

Excimer laser annealing effects on AlGaN/GaN heterostructures. / Lee, In Hak; Joo, Beom Soo; Kim, Hyuk Jin; Yun, Ye Seul; Jang, Seun Yup; Kang, Min Gyu; Kang, Chong-Yun; Park, Byeong Gyu; Han, Moonsup; Chang, Young Jun.

In: Current Applied Physics, Vol. 16, No. 6, 01.06.2016, p. 628-632.

Research output: Contribution to journalArticle

Lee, IH, Joo, BS, Kim, HJ, Yun, YS, Jang, SY, Kang, MG, Kang, C-Y, Park, BG, Han, M & Chang, YJ 2016, 'Excimer laser annealing effects on AlGaN/GaN heterostructures', Current Applied Physics, vol. 16, no. 6, pp. 628-632. https://doi.org/10.1016/j.cap.2016.03.013
Lee IH, Joo BS, Kim HJ, Yun YS, Jang SY, Kang MG et al. Excimer laser annealing effects on AlGaN/GaN heterostructures. Current Applied Physics. 2016 Jun 1;16(6):628-632. https://doi.org/10.1016/j.cap.2016.03.013
Lee, In Hak ; Joo, Beom Soo ; Kim, Hyuk Jin ; Yun, Ye Seul ; Jang, Seun Yup ; Kang, Min Gyu ; Kang, Chong-Yun ; Park, Byeong Gyu ; Han, Moonsup ; Chang, Young Jun. / Excimer laser annealing effects on AlGaN/GaN heterostructures. In: Current Applied Physics. 2016 ; Vol. 16, No. 6. pp. 628-632.
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AU - Kang, Min Gyu

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