Excimer laser annealing of Er-implanted GaN

Seuk Joo Rhee; Sangsig Kim; Christopher W. Sterner; Jeffrey O. White; Stephen G. Bishop

doi:10.1063/1.1391217

Excimer laser annealing of Er-implanted GaN

Seuk Joo Rhee, Sangsig Kim, Christopher W. Sterner, Jeffrey O. White, Stephen G. Bishop

School of Electrical Engineering

Research output: Contribution to journal › Article

19 Citations (Scopus)

Abstract

Thin films of Er-implanted GaN are annealed with pulses of 31 ns duration from a KrF excimer laser. The degree of annealing is evaluated by measuring the Er photoluminescence at 1540 nm. The implantation dose is 4 × 10¹³-4 × 10¹⁵cm^-2. The laser fluence is 0.15-0.88 J/cm². The number of laser pulses is 10²-5 × 10⁴. A total heating time on the order of 1 ms is long enough to produce good structural reordering, and short enough to avoid decomposition. The results are compared with a numerical simulation of the heating as a function of time and depth in the sample.

Original language	English
Pages (from-to)	2760-2763
Number of pages	4
Journal	Journal of Applied Physics
Volume	90
Issue number	6
DOIs	https://doi.org/10.1063/1.1391217
Publication status	Published - 2001 Sep 15

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.1391217

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Rhee, S. J., Kim, S., Sterner, C. W., White, J. O., & Bishop, S. G. (2001). Excimer laser annealing of Er-implanted GaN. Journal of Applied Physics, 90(6), 2760-2763. https://doi.org/10.1063/1.1391217

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