Abstract
Thin films of Er-implanted GaN are annealed with pulses of 31 ns duration from a KrF excimer laser. The degree of annealing is evaluated by measuring the Er photoluminescence at 1540 nm. The implantation dose is 4 × 1013-4 × 1015cm-2. The laser fluence is 0.15-0.88 J/cm2. The number of laser pulses is 102-5 × 104. A total heating time on the order of 1 ms is long enough to produce good structural reordering, and short enough to avoid decomposition. The results are compared with a numerical simulation of the heating as a function of time and depth in the sample.
Original language | English |
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Pages (from-to) | 2760-2763 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 90 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2001 Sep 15 |
ASJC Scopus subject areas
- Physics and Astronomy(all)