Excimer laser annealing of Er-implanted GaN

Seuk Joo Rhee; Sangsig Kim; Christopher W. Sterner; Jeffrey O. White; Stephen G. Bishop

doi:10.1063/1.1391217

Excimer laser annealing of Er-implanted GaN

Seuk Joo Rhee, Sangsig Kim, Christopher W. Sterner, Jeffrey O. White, Stephen G. Bishop

School of Electrical Engineering

Research output: Contribution to journal › Article

19 Citations (Scopus)

Abstract

Thin films of Er-implanted GaN are annealed with pulses of 31 ns duration from a KrF excimer laser. The degree of annealing is evaluated by measuring the Er photoluminescence at 1540 nm. The implantation dose is 4 × 10¹³-4 × 10¹⁵cm^-2. The laser fluence is 0.15-0.88 J/cm². The number of laser pulses is 10²-5 × 10⁴. A total heating time on the order of 1 ms is long enough to produce good structural reordering, and short enough to avoid decomposition. The results are compared with a numerical simulation of the heating as a function of time and depth in the sample.

Original language	English
Pages (from-to)	2760-2763
Number of pages	4
Journal	Journal of Applied Physics
Volume	90
Issue number	6
DOIs	https://doi.org/10.1063/1.1391217
Publication status	Published - 2001 Sep 15

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ASJC Scopus subject areas

Physics and Astronomy(all)
Physics and Astronomy (miscellaneous)

Cite this

Rhee, S. J., Kim, S., Sterner, C. W., White, J. O., & Bishop, S. G. (2001). Excimer laser annealing of Er-implanted GaN. Journal of Applied Physics, 90(6), 2760-2763. https://doi.org/10.1063/1.1391217

@article{722e016899e04f8db100430f050e0bc7,

title = "Excimer laser annealing of Er-implanted GaN",

abstract = "Thin films of Er-implanted GaN are annealed with pulses of 31 ns duration from a KrF excimer laser. The degree of annealing is evaluated by measuring the Er photoluminescence at 1540 nm. The implantation dose is 4 × 1013-4 × 1015cm-2. The laser fluence is 0.15-0.88 J/cm2. The number of laser pulses is 102-5 × 104. A total heating time on the order of 1 ms is long enough to produce good structural reordering, and short enough to avoid decomposition. The results are compared with a numerical simulation of the heating as a function of time and depth in the sample.",

author = "Rhee, {Seuk Joo} and Sangsig Kim and Sterner, {Christopher W.} and White, {Jeffrey O.} and Bishop, {Stephen G.}",

year = "2001",

month = "9",

day = "15",

doi = "10.1063/1.1391217",

language = "English",

volume = "90",

pages = "2760--2763",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

TY - JOUR

T1 - Excimer laser annealing of Er-implanted GaN

AU - Rhee, Seuk Joo

AU - Kim, Sangsig

AU - Sterner, Christopher W.

AU - White, Jeffrey O.

AU - Bishop, Stephen G.

PY - 2001/9/15

Y1 - 2001/9/15

N2 - Thin films of Er-implanted GaN are annealed with pulses of 31 ns duration from a KrF excimer laser. The degree of annealing is evaluated by measuring the Er photoluminescence at 1540 nm. The implantation dose is 4 × 1013-4 × 1015cm-2. The laser fluence is 0.15-0.88 J/cm2. The number of laser pulses is 102-5 × 104. A total heating time on the order of 1 ms is long enough to produce good structural reordering, and short enough to avoid decomposition. The results are compared with a numerical simulation of the heating as a function of time and depth in the sample.

AB - Thin films of Er-implanted GaN are annealed with pulses of 31 ns duration from a KrF excimer laser. The degree of annealing is evaluated by measuring the Er photoluminescence at 1540 nm. The implantation dose is 4 × 1013-4 × 1015cm-2. The laser fluence is 0.15-0.88 J/cm2. The number of laser pulses is 102-5 × 104. A total heating time on the order of 1 ms is long enough to produce good structural reordering, and short enough to avoid decomposition. The results are compared with a numerical simulation of the heating as a function of time and depth in the sample.

UR - http://www.scopus.com/inward/record.url?scp=0040621956&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0040621956&partnerID=8YFLogxK

U2 - 10.1063/1.1391217

DO - 10.1063/1.1391217

M3 - Article

AN - SCOPUS:0040621956

VL - 90

SP - 2760

EP - 2763

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 6

ER -

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10.1063/1.1391217