Excimer laser annealing of Er-implanted GaN

Seuk Joo Rhee, Sangsig Kim, Christopher W. Sterner, Jeffrey O. White, Stephen G. Bishop

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Thin films of Er-implanted GaN are annealed with pulses of 31 ns duration from a KrF excimer laser. The degree of annealing is evaluated by measuring the Er photoluminescence at 1540 nm. The implantation dose is 4 × 1013-4 × 1015cm-2. The laser fluence is 0.15-0.88 J/cm2. The number of laser pulses is 102-5 × 104. A total heating time on the order of 1 ms is long enough to produce good structural reordering, and short enough to avoid decomposition. The results are compared with a numerical simulation of the heating as a function of time and depth in the sample.

Original languageEnglish
Pages (from-to)2760-2763
Number of pages4
JournalJournal of Applied Physics
Volume90
Issue number6
DOIs
Publication statusPublished - 2001 Sep 15

Fingerprint

laser annealing
excimer lasers
heating
pulses
lasers
implantation
fluence
photoluminescence
decomposition
dosage
annealing
thin films
simulation

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Rhee, S. J., Kim, S., Sterner, C. W., White, J. O., & Bishop, S. G. (2001). Excimer laser annealing of Er-implanted GaN. Journal of Applied Physics, 90(6), 2760-2763. https://doi.org/10.1063/1.1391217

Excimer laser annealing of Er-implanted GaN. / Rhee, Seuk Joo; Kim, Sangsig; Sterner, Christopher W.; White, Jeffrey O.; Bishop, Stephen G.

In: Journal of Applied Physics, Vol. 90, No. 6, 15.09.2001, p. 2760-2763.

Research output: Contribution to journalArticle

Rhee, SJ, Kim, S, Sterner, CW, White, JO & Bishop, SG 2001, 'Excimer laser annealing of Er-implanted GaN', Journal of Applied Physics, vol. 90, no. 6, pp. 2760-2763. https://doi.org/10.1063/1.1391217
Rhee SJ, Kim S, Sterner CW, White JO, Bishop SG. Excimer laser annealing of Er-implanted GaN. Journal of Applied Physics. 2001 Sep 15;90(6):2760-2763. https://doi.org/10.1063/1.1391217
Rhee, Seuk Joo ; Kim, Sangsig ; Sterner, Christopher W. ; White, Jeffrey O. ; Bishop, Stephen G. / Excimer laser annealing of Er-implanted GaN. In: Journal of Applied Physics. 2001 ; Vol. 90, No. 6. pp. 2760-2763.
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