Excimer laser annealing of Er-implanted GaN

Seuk Joo Rhee, Sangsig Kim, Christopher W. Sterner, Jeffrey O. White, Stephen G. Bishop

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Abstract

Thin films of Er-implanted GaN are annealed with pulses of 31 ns duration from a KrF excimer laser. The degree of annealing is evaluated by measuring the Er photoluminescence at 1540 nm. The implantation dose is 4 × 1013-4 × 1015cm-2. The laser fluence is 0.15-0.88 J/cm2. The number of laser pulses is 102-5 × 104. A total heating time on the order of 1 ms is long enough to produce good structural reordering, and short enough to avoid decomposition. The results are compared with a numerical simulation of the heating as a function of time and depth in the sample.

Original languageEnglish
Pages (from-to)2760-2763
Number of pages4
JournalJournal of Applied Physics
Volume90
Issue number6
DOIs
Publication statusPublished - 2001 Sep 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Rhee, S. J., Kim, S., Sterner, C. W., White, J. O., & Bishop, S. G. (2001). Excimer laser annealing of Er-implanted GaN. Journal of Applied Physics, 90(6), 2760-2763. https://doi.org/10.1063/1.1391217