Abstract
Thin films of Er-implanted GaN are annealed with pulses of 31 ns duration from a KrF excimer laser. The degree of annealing is evaluated by measuring the Er photoluminescence at 1540 nm. The implantation dose is 4 × 1013-4 × 1015cm-2. The laser fluence is 0.15-0.88 J/cm2. The number of laser pulses is 102-5 × 104. A total heating time on the order of 1 ms is long enough to produce good structural reordering, and short enough to avoid decomposition. The results are compared with a numerical simulation of the heating as a function of time and depth in the sample.
| Original language | English |
|---|---|
| Pages (from-to) | 2760-2763 |
| Number of pages | 4 |
| Journal | Journal of Applied Physics |
| Volume | 90 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2001 Sep 15 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
Cite this
Excimer laser annealing of Er-implanted GaN. / Rhee, Seuk Joo; Kim, Sangsig; Sterner, Christopher W.; White, Jeffrey O.; Bishop, Stephen G.
In: Journal of Applied Physics, Vol. 90, No. 6, 15.09.2001, p. 2760-2763.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Excimer laser annealing of Er-implanted GaN
AU - Rhee, Seuk Joo
AU - Kim, Sangsig
AU - Sterner, Christopher W.
AU - White, Jeffrey O.
AU - Bishop, Stephen G.
PY - 2001/9/15
Y1 - 2001/9/15
N2 - Thin films of Er-implanted GaN are annealed with pulses of 31 ns duration from a KrF excimer laser. The degree of annealing is evaluated by measuring the Er photoluminescence at 1540 nm. The implantation dose is 4 × 1013-4 × 1015cm-2. The laser fluence is 0.15-0.88 J/cm2. The number of laser pulses is 102-5 × 104. A total heating time on the order of 1 ms is long enough to produce good structural reordering, and short enough to avoid decomposition. The results are compared with a numerical simulation of the heating as a function of time and depth in the sample.
AB - Thin films of Er-implanted GaN are annealed with pulses of 31 ns duration from a KrF excimer laser. The degree of annealing is evaluated by measuring the Er photoluminescence at 1540 nm. The implantation dose is 4 × 1013-4 × 1015cm-2. The laser fluence is 0.15-0.88 J/cm2. The number of laser pulses is 102-5 × 104. A total heating time on the order of 1 ms is long enough to produce good structural reordering, and short enough to avoid decomposition. The results are compared with a numerical simulation of the heating as a function of time and depth in the sample.
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U2 - 10.1063/1.1391217
DO - 10.1063/1.1391217
M3 - Article
VL - 90
SP - 2760
EP - 2763
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 6
ER -