Excimer laser annealing of Er-implanted GaN

Seuk Joo Rhee; Sangsig Kim; Christopher W. Sterner; Jeffrey O. White; Stephen G. Bishop

doi:10.1063/1.1391217

Excimer laser annealing of Er-implanted GaN

Seuk Joo Rhee, Sangsig Kim, Christopher W. Sterner, Jeffrey O. White, Stephen G. Bishop

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Thin films of Er-implanted GaN are annealed with pulses of 31 ns duration from a KrF excimer laser. The degree of annealing is evaluated by measuring the Er photoluminescence at 1540 nm. The implantation dose is 4 × 10¹³-4 × 10¹⁵cm^-2. The laser fluence is 0.15-0.88 J/cm². The number of laser pulses is 10²-5 × 10⁴. A total heating time on the order of 1 ms is long enough to produce good structural reordering, and short enough to avoid decomposition. The results are compared with a numerical simulation of the heating as a function of time and depth in the sample.

Original language	English
Pages (from-to)	2760-2763
Number of pages	4
Journal	Journal of Applied Physics
Volume	90
Issue number	6
DOIs	https://doi.org/10.1063/1.1391217
Publication status	Published - 2001 Sep 15

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "Thin films of Er-implanted GaN are annealed with pulses of 31 ns duration from a KrF excimer laser. The degree of annealing is evaluated by measuring the Er photoluminescence at 1540 nm. The implantation dose is 4 × 1013-4 × 1015cm-2. The laser fluence is 0.15-0.88 J/cm2. The number of laser pulses is 102-5 × 104. A total heating time on the order of 1 ms is long enough to produce good structural reordering, and short enough to avoid decomposition. The results are compared with a numerical simulation of the heating as a function of time and depth in the sample.",

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AU - Bishop, Stephen G.

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AB - Thin films of Er-implanted GaN are annealed with pulses of 31 ns duration from a KrF excimer laser. The degree of annealing is evaluated by measuring the Er photoluminescence at 1540 nm. The implantation dose is 4 × 1013-4 × 1015cm-2. The laser fluence is 0.15-0.88 J/cm2. The number of laser pulses is 102-5 × 104. A total heating time on the order of 1 ms is long enough to produce good structural reordering, and short enough to avoid decomposition. The results are compared with a numerical simulation of the heating as a function of time and depth in the sample.

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Excimer laser annealing of Er-implanted GaN

Abstract

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