Exciton-phonon coupling channels in a ‘strain-free’ GaAs droplet epitaxy single quantum dot

Song ee Lee, Inah Yeo, Min Kyung Jo, Young Woo Jeong, Tae Geun Kim, Jong Su Kim, Kyung Soo Yi, Il Ki Han, Jin Dong Song

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We examine the temperature-dependent excitonic transition energy shift of strain-free GaAs droplet epitaxy (DE) quantum dots (QDs). Interestingly the statistical investigation of QD optical properties enables us to observe three distinct temperature dispersions for four series of DE QDs. We present comparative analyses of the exciton-phonon coupling mechanisms employing various empirical to multi-oscillator models associated with each QD-specific phonon dispersion spectrum. The systematic investigation of such QD exciton-phonon coupling is crucial for fine control of local defects in engineered quantum dot single-photon sources.

Original languageEnglish
JournalCurrent Applied Physics
DOIs
Publication statusAccepted/In press - 2018 Jan 1

Fingerprint

Epitaxial growth
Excitons
epitaxy
Semiconductor quantum dots
quantum dots
excitons
Dispersions
gallium arsenide
LDS 751
Photons
Optical properties
oscillators
optical properties
Temperature
Defects
temperature
shift
defects
photons

Keywords

  • Droplet epitaxy
  • Engineered quantum dot single-photon source
  • Exciton-phonon coupling
  • Strain-free quantum dot

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Exciton-phonon coupling channels in a ‘strain-free’ GaAs droplet epitaxy single quantum dot. / Lee, Song ee; Yeo, Inah; Jo, Min Kyung; Jeong, Young Woo; Kim, Tae Geun; Kim, Jong Su; Yi, Kyung Soo; Han, Il Ki; Song, Jin Dong.

In: Current Applied Physics, 01.01.2018.

Research output: Contribution to journalArticle

Lee, Song ee ; Yeo, Inah ; Jo, Min Kyung ; Jeong, Young Woo ; Kim, Tae Geun ; Kim, Jong Su ; Yi, Kyung Soo ; Han, Il Ki ; Song, Jin Dong. / Exciton-phonon coupling channels in a ‘strain-free’ GaAs droplet epitaxy single quantum dot. In: Current Applied Physics. 2018.
@article{fac45b78a8d048919a6105f2648c0b3f,
title = "Exciton-phonon coupling channels in a ‘strain-free’ GaAs droplet epitaxy single quantum dot",
abstract = "We examine the temperature-dependent excitonic transition energy shift of strain-free GaAs droplet epitaxy (DE) quantum dots (QDs). Interestingly the statistical investigation of QD optical properties enables us to observe three distinct temperature dispersions for four series of DE QDs. We present comparative analyses of the exciton-phonon coupling mechanisms employing various empirical to multi-oscillator models associated with each QD-specific phonon dispersion spectrum. The systematic investigation of such QD exciton-phonon coupling is crucial for fine control of local defects in engineered quantum dot single-photon sources.",
keywords = "Droplet epitaxy, Engineered quantum dot single-photon source, Exciton-phonon coupling, Strain-free quantum dot",
author = "Lee, {Song ee} and Inah Yeo and Jo, {Min Kyung} and Jeong, {Young Woo} and Kim, {Tae Geun} and Kim, {Jong Su} and Yi, {Kyung Soo} and Han, {Il Ki} and Song, {Jin Dong}",
year = "2018",
month = "1",
day = "1",
doi = "10.1016/j.cap.2018.04.003",
language = "English",
journal = "Current Applied Physics",
issn = "1567-1739",
publisher = "Elsevier",

}

TY - JOUR

T1 - Exciton-phonon coupling channels in a ‘strain-free’ GaAs droplet epitaxy single quantum dot

AU - Lee, Song ee

AU - Yeo, Inah

AU - Jo, Min Kyung

AU - Jeong, Young Woo

AU - Kim, Tae Geun

AU - Kim, Jong Su

AU - Yi, Kyung Soo

AU - Han, Il Ki

AU - Song, Jin Dong

PY - 2018/1/1

Y1 - 2018/1/1

N2 - We examine the temperature-dependent excitonic transition energy shift of strain-free GaAs droplet epitaxy (DE) quantum dots (QDs). Interestingly the statistical investigation of QD optical properties enables us to observe three distinct temperature dispersions for four series of DE QDs. We present comparative analyses of the exciton-phonon coupling mechanisms employing various empirical to multi-oscillator models associated with each QD-specific phonon dispersion spectrum. The systematic investigation of such QD exciton-phonon coupling is crucial for fine control of local defects in engineered quantum dot single-photon sources.

AB - We examine the temperature-dependent excitonic transition energy shift of strain-free GaAs droplet epitaxy (DE) quantum dots (QDs). Interestingly the statistical investigation of QD optical properties enables us to observe three distinct temperature dispersions for four series of DE QDs. We present comparative analyses of the exciton-phonon coupling mechanisms employing various empirical to multi-oscillator models associated with each QD-specific phonon dispersion spectrum. The systematic investigation of such QD exciton-phonon coupling is crucial for fine control of local defects in engineered quantum dot single-photon sources.

KW - Droplet epitaxy

KW - Engineered quantum dot single-photon source

KW - Exciton-phonon coupling

KW - Strain-free quantum dot

UR - http://www.scopus.com/inward/record.url?scp=85045254049&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85045254049&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2018.04.003

DO - 10.1016/j.cap.2018.04.003

M3 - Article

AN - SCOPUS:85045254049

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

ER -