Experimental analysis of surface roughness scattering in FinFET devices

Jae Woo Lee, Doyoung Jang, Mireille Mouis, Gyu-Tae Kim, Thomas Chiarella, Thomas Hoffmann, Gérard Ghibaudo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The surface roughness scattering in n-type FinFET devices is accurately analyzed based on mobility measurements at low temperatures. Using the top/side wall current separation technique, the effective mobility for each surface has been extracted. Considering the second order mobility degradation factor, the surface roughness scattering of top and sidewall conduction has been quantitatively compared.

Original languageEnglish
Title of host publication2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010
Pages305-308
Number of pages4
DOIs
Publication statusPublished - 2010 Dec 15
Event2010 European Solid State Device Research Conference, ESSDERC 2010 - Sevilla, Spain
Duration: 2010 Sep 142010 Sep 16

Other

Other2010 European Solid State Device Research Conference, ESSDERC 2010
CountrySpain
CitySevilla
Period10/9/1410/9/16

Fingerprint

surface roughness
scattering
degradation
conduction

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Lee, J. W., Jang, D., Mouis, M., Kim, G-T., Chiarella, T., Hoffmann, T., & Ghibaudo, G. (2010). Experimental analysis of surface roughness scattering in FinFET devices. In 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010 (pp. 305-308). [5618353] https://doi.org/10.1109/ESSDERC.2010.5618353

Experimental analysis of surface roughness scattering in FinFET devices. / Lee, Jae Woo; Jang, Doyoung; Mouis, Mireille; Kim, Gyu-Tae; Chiarella, Thomas; Hoffmann, Thomas; Ghibaudo, Gérard.

2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. 2010. p. 305-308 5618353.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, JW, Jang, D, Mouis, M, Kim, G-T, Chiarella, T, Hoffmann, T & Ghibaudo, G 2010, Experimental analysis of surface roughness scattering in FinFET devices. in 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010., 5618353, pp. 305-308, 2010 European Solid State Device Research Conference, ESSDERC 2010, Sevilla, Spain, 10/9/14. https://doi.org/10.1109/ESSDERC.2010.5618353
Lee JW, Jang D, Mouis M, Kim G-T, Chiarella T, Hoffmann T et al. Experimental analysis of surface roughness scattering in FinFET devices. In 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. 2010. p. 305-308. 5618353 https://doi.org/10.1109/ESSDERC.2010.5618353
Lee, Jae Woo ; Jang, Doyoung ; Mouis, Mireille ; Kim, Gyu-Tae ; Chiarella, Thomas ; Hoffmann, Thomas ; Ghibaudo, Gérard. / Experimental analysis of surface roughness scattering in FinFET devices. 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. 2010. pp. 305-308
@inproceedings{15be796aa0e64af993b2b0c3d268bb8a,
title = "Experimental analysis of surface roughness scattering in FinFET devices",
abstract = "The surface roughness scattering in n-type FinFET devices is accurately analyzed based on mobility measurements at low temperatures. Using the top/side wall current separation technique, the effective mobility for each surface has been extracted. Considering the second order mobility degradation factor, the surface roughness scattering of top and sidewall conduction has been quantitatively compared.",
author = "Lee, {Jae Woo} and Doyoung Jang and Mireille Mouis and Gyu-Tae Kim and Thomas Chiarella and Thomas Hoffmann and G{\'e}rard Ghibaudo",
year = "2010",
month = "12",
day = "15",
doi = "10.1109/ESSDERC.2010.5618353",
language = "English",
isbn = "9781424466610",
pages = "305--308",
booktitle = "2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010",

}

TY - GEN

T1 - Experimental analysis of surface roughness scattering in FinFET devices

AU - Lee, Jae Woo

AU - Jang, Doyoung

AU - Mouis, Mireille

AU - Kim, Gyu-Tae

AU - Chiarella, Thomas

AU - Hoffmann, Thomas

AU - Ghibaudo, Gérard

PY - 2010/12/15

Y1 - 2010/12/15

N2 - The surface roughness scattering in n-type FinFET devices is accurately analyzed based on mobility measurements at low temperatures. Using the top/side wall current separation technique, the effective mobility for each surface has been extracted. Considering the second order mobility degradation factor, the surface roughness scattering of top and sidewall conduction has been quantitatively compared.

AB - The surface roughness scattering in n-type FinFET devices is accurately analyzed based on mobility measurements at low temperatures. Using the top/side wall current separation technique, the effective mobility for each surface has been extracted. Considering the second order mobility degradation factor, the surface roughness scattering of top and sidewall conduction has been quantitatively compared.

UR - http://www.scopus.com/inward/record.url?scp=78649937356&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78649937356&partnerID=8YFLogxK

U2 - 10.1109/ESSDERC.2010.5618353

DO - 10.1109/ESSDERC.2010.5618353

M3 - Conference contribution

AN - SCOPUS:78649937356

SN - 9781424466610

SP - 305

EP - 308

BT - 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

ER -