TY - GEN
T1 - Experimental analysis of surface roughness scattering in FinFET devices
AU - Lee, Jae Woo
AU - Jang, Doyoung
AU - Mouis, Mireille
AU - Kim, Gyu Tae
AU - Chiarella, Thomas
AU - Hoffmann, Thomas
AU - Ghibaudo, Gérard
PY - 2010
Y1 - 2010
N2 - The surface roughness scattering in n-type FinFET devices is accurately analyzed based on mobility measurements at low temperatures. Using the top/side wall current separation technique, the effective mobility for each surface has been extracted. Considering the second order mobility degradation factor, the surface roughness scattering of top and sidewall conduction has been quantitatively compared.
AB - The surface roughness scattering in n-type FinFET devices is accurately analyzed based on mobility measurements at low temperatures. Using the top/side wall current separation technique, the effective mobility for each surface has been extracted. Considering the second order mobility degradation factor, the surface roughness scattering of top and sidewall conduction has been quantitatively compared.
UR - http://www.scopus.com/inward/record.url?scp=78649937356&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78649937356&partnerID=8YFLogxK
U2 - 10.1109/ESSDERC.2010.5618353
DO - 10.1109/ESSDERC.2010.5618353
M3 - Conference contribution
AN - SCOPUS:78649937356
SN - 9781424466610
T3 - 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010
SP - 305
EP - 308
BT - 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010
T2 - 2010 European Solid State Device Research Conference, ESSDERC 2010
Y2 - 14 September 2010 through 16 September 2010
ER -