Experimental analysis of surface roughness scattering in FinFET devices

Jae Woo Lee, Doyoung Jang, Mireille Mouis, Gyu-Tae Kim, Thomas Chiarella, Thomas Hoffmann, Gérard Ghibaudo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The surface roughness scattering in n-type FinFET devices is accurately analyzed based on mobility measurements at low temperatures. Using the top/side wall current separation technique, the effective mobility for each surface has been extracted. Considering the second order mobility degradation factor, the surface roughness scattering of top and sidewall conduction has been quantitatively compared.

Original languageEnglish
Title of host publication2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010
Pages305-308
Number of pages4
DOIs
Publication statusPublished - 2010 Dec 15
Event2010 European Solid State Device Research Conference, ESSDERC 2010 - Sevilla, Spain
Duration: 2010 Sep 142010 Sep 16

Other

Other2010 European Solid State Device Research Conference, ESSDERC 2010
CountrySpain
CitySevilla
Period10/9/1410/9/16

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ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Lee, J. W., Jang, D., Mouis, M., Kim, G-T., Chiarella, T., Hoffmann, T., & Ghibaudo, G. (2010). Experimental analysis of surface roughness scattering in FinFET devices. In 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010 (pp. 305-308). [5618353] https://doi.org/10.1109/ESSDERC.2010.5618353