Abstract
The feasibility of geometric magnetoresistance (MR) measurement from linear to saturation operation regime is demonstrated in ultrathin body and BOX fully depleted silicon-on-insulator devices from 14-nm technology node. Besides, we propose a new physical compact model for MOSFET drain current under high field transport, which reproduces experimental MR mobility from linear to saturation operation region and serves as the basis for a new extraction method of carrier saturation velocity. A benchmarking with state-of-the-art saturation velocity extraction methodologies is also conducted. Our saturation velocity results indicate that, for this technology, nonstationary transport prevails as manifested by an overshoot velocity behavior, still far from the ballistic limit.
| Original language | English |
|---|---|
| Pages (from-to) | 3-8 |
| Number of pages | 6 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 62 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2015 Jan 1 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Experimental and theoretical investigation of magnetoresistance from linear regime to saturation in 14-nm FD-SOI MOS devices. / Shin, Minju; Shi, Ming; Mouis, Mireille; Cros, Antoine; Josse, Emmanuel; Mukhopadhyay, Sutirtha; Piot, Benjamin; Kim, Gyu-Tae; Ghibaudo, Gerard.
In: IEEE Transactions on Electron Devices, Vol. 62, No. 1, 01.01.2015, p. 3-8.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Experimental and theoretical investigation of magnetoresistance from linear regime to saturation in 14-nm FD-SOI MOS devices
AU - Shin, Minju
AU - Shi, Ming
AU - Mouis, Mireille
AU - Cros, Antoine
AU - Josse, Emmanuel
AU - Mukhopadhyay, Sutirtha
AU - Piot, Benjamin
AU - Kim, Gyu-Tae
AU - Ghibaudo, Gerard
PY - 2015/1/1
Y1 - 2015/1/1
N2 - The feasibility of geometric magnetoresistance (MR) measurement from linear to saturation operation regime is demonstrated in ultrathin body and BOX fully depleted silicon-on-insulator devices from 14-nm technology node. Besides, we propose a new physical compact model for MOSFET drain current under high field transport, which reproduces experimental MR mobility from linear to saturation operation region and serves as the basis for a new extraction method of carrier saturation velocity. A benchmarking with state-of-the-art saturation velocity extraction methodologies is also conducted. Our saturation velocity results indicate that, for this technology, nonstationary transport prevails as manifested by an overshoot velocity behavior, still far from the ballistic limit.
AB - The feasibility of geometric magnetoresistance (MR) measurement from linear to saturation operation regime is demonstrated in ultrathin body and BOX fully depleted silicon-on-insulator devices from 14-nm technology node. Besides, we propose a new physical compact model for MOSFET drain current under high field transport, which reproduces experimental MR mobility from linear to saturation operation region and serves as the basis for a new extraction method of carrier saturation velocity. A benchmarking with state-of-the-art saturation velocity extraction methodologies is also conducted. Our saturation velocity results indicate that, for this technology, nonstationary transport prevails as manifested by an overshoot velocity behavior, still far from the ballistic limit.
KW - Magnetoresistance (MR)
KW - mobility
KW - out-of-equilibrium transport
KW - saturation regime
KW - saturation velocity
KW - Ultrathin body and BOX (UTBB).
UR - http://www.scopus.com/inward/record.url?scp=84920201734&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84920201734&partnerID=8YFLogxK
U2 - 10.1109/TED.2014.2366170
DO - 10.1109/TED.2014.2366170
M3 - Article
AN - SCOPUS:84920201734
VL - 62
SP - 3
EP - 8
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 1
ER -