Experimental and theoretical investigation of magnetoresistance from linear regime to saturation in 14-nm FD-SOI MOS devices

Minju Shin, Ming Shi, Mireille Mouis, Antoine Cros, Emmanuel Josse, Sutirtha Mukhopadhyay, Benjamin Piot, Gyu-Tae Kim, Gerard Ghibaudo

Research output: Contribution to journalArticle

4 Citations (Scopus)


The feasibility of geometric magnetoresistance (MR) measurement from linear to saturation operation regime is demonstrated in ultrathin body and BOX fully depleted silicon-on-insulator devices from 14-nm technology node. Besides, we propose a new physical compact model for MOSFET drain current under high field transport, which reproduces experimental MR mobility from linear to saturation operation region and serves as the basis for a new extraction method of carrier saturation velocity. A benchmarking with state-of-the-art saturation velocity extraction methodologies is also conducted. Our saturation velocity results indicate that, for this technology, nonstationary transport prevails as manifested by an overshoot velocity behavior, still far from the ballistic limit.

Original languageEnglish
Pages (from-to)3-8
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number1
Publication statusPublished - 2015 Jan 1


ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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